INTEGRATED CIRCUITS DATA SHEET 74HC2G14; 74HCT2G14 Inverting Schmitt-triggers Preliminary specification 2003 May 1 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 FEATURES • Monostable multivibrators • Wide supply voltage range from 2.0 to 6.0 V • Output capability: standard. • High noise immunity • Low power dissipation DESCRIPTION • Balanced propagation delays The 74HC2G/HCT2G14 is a high-speed Si-gate CMOS device. • Unlimited input rise and fall times • Very small 6 pins package. The 74HC2G/HCT2G14 provides two inverting buffers with Schmitt-trigger action. This device is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. APPLICATIONS • Wave and pulse shapers for highly noisy environments • Astable multivibrators QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. TYPICAL SYMBOL PARAMETER tPHL/tPLH propagation delay nA to nY CI input capacitance CPD power dissipation capacitance CONDITIONS CL = 50 pF; VCC = 4.5 V notes 1 and 2 UNIT HC2G HCT2G 16 21 ns 2 2 pF 10 10 pF Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For HC2G the condition is VI = GND to VCC. For HCT2G the condition is VI = GND to VCC − 1.5 V. FUNCTION TABLE See note 1. INPUTS OUTPUTS nA nY L H H L Note 1. H = HIGH voltage level; L = LOW voltage level. 2003 May 1 2 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 ORDERING INFORMATION PACKAGES TYPE NUMBER TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE MARKING 74HC2G14GW −40 to +125 °C 6 SC-88 plastic SOT363 HK 74HC2G14GV −40 to +125 °C 6 SC-74 plastic SOT457 H14 74HCT2G14GW −40 to +125 °C 6 SC-88 plastic SOT363 TK 74HCT2G14GV −40 to +125 °C 6 SC-74 plastic SOT457 T14 PINNING PIN SYMBOL 1, 3 2 4, 6 8 1A 1 GND 2 2A 3 DESCRIPTION 1A to 2A data input GND ground (0 V) 2Y to 1Y data output VCC DC supply voltage 14 6 1Y 5 VCC 4 2Y 1 3 Fig.1 Pin configuration. 1 6 3 4 1Y 2A 2Y 6 4 Fig.2 Logic symbol. Fig.3 IEC logic symbol. 2003 May 1 1A 1A 1Y 2A 2Y Fig.4 Logic diagram (one driver). 3 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 RECOMMENDED OPERATING CONDITIONS 74HC2G14 SYMBOL PARAMETER 74HCT2G14 CONDITIONS UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 − VCC 0 − VCC V VO output voltage 0 − VCC 0 − VCC V Tamb operating ambient temperature +25 +125 −40 +25 +125 °C see DC and AC −40 characteristics per device LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL PARAMETER VCC supply voltage IIK input diode current CONDITIONS VI < −0.5 V or VI > VCC + 0.5 V; note 1 MIN. MAX. UNIT −0.5 +7.0 V − ±20 mA IOK output diode current VO < −0.5 V or VO > VCC + 0.5 V; note 1 − ±20 mA IO output source or sink current −0.5 V < VO < VCC + 0.5 V; note 1 − 25 mA ICC VCC or GND current note 1 − 50 mA Tstg storage temperature −65 +150 °C PD power dissipation per package − 300 mW for temperature range from −40 to +125 °C; note 2 Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 110 °C the value of PD derates linearly with 8 mW/K. 2003 May 1 4 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 DC CHARACTERISTICS Type 74HC2G14 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL VOL −40 to +85 +25 PARAMETER OTHER VOH Tamb (°C) VCC (V) −40 to +125 UNIT MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX. VI = VIH or VIL: IO = −20 µA 2.0 1.9 2.0 − 1.9 − 1.9 − V VI = VIH or VIL: IO = −20 µA 4.5 4.4 4.5 − 4.4 − 4.4 − V VI = VIH or VIL: IO = −20 µA 6.0 5.9 6.0 − 5.9 − 5.9 − V VI = VIH or VIL; IO = −4.0 mA 4.5 4.18 4.32 − 4.13 − 3.7 − V VI = VIH or VIL; IO = −5.2 mA 6.0 5.68 5.81 − 5.63 − 5.2 − V LOW-level output VI = VIH or VIL; voltage IO = 20 µA 2.0 − 0 0.1 − 0.1 − 0.1 V VI = VIH or VIL; IO = 20 µA 4.5 − 0 0.1 − 0.1 − 0.1 V VI = VIH or VIL; IO = 20 µA 6.0 − 0 0.1 − 0.1 − 0.1 V VI = VIH or VIL; IO = 4.0 mA 4.5 − 0.15 0.26 − 0.33 − 0.4 V VI = VIH or VIL; IO = 5.2 mA 6.0 − 0.16 0.26 − 0.33 − 0.4 V HIGH-level output voltage II input leakage current VI = VCC or GND 6.0 − − ±0.1 − ±1.0 − ±1.0 µA ICC quiescent supply current VI = VCC or GND; 6.0 IO = 0 − − 1.0 − 10 − 20 µA Note 1. All typical values are measured at Tamb = 25 °C. 2003 May 1 5 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 Type 74HCT2G14 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL VOL −40 to +85 +25 PARAMETER OTHER VOH Tamb (°C) VCC (V) −40 to +125 UNIT MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX. VI = VIH or VIL; IO = −20 µA 4.5 4.4 4.5 − 4.4 − 4.4 − V VI = VIH or VIL; IO = −4.0 mA 4.5 4.18 4.32 − 4.13 − 3.7 − V LOW-level output VI = VIH or VIL; voltage IO = 20 µA 4.5 − 0 0.1 − 0.1 − 0.1 V VI = VIH or VIL; IO = 4.0 mA 4.5 − 0.15 0.26 − 0.33 − 0.4 V VI = VCC or GND HIGH-level output voltage II input leakage current 5.5 − − ±0.1 − ±1.0 − ±1.0 µA ICC quiescent supply VI = VCC or GND; 5.5 current IO = 0 − − 1.0 − 10 − 20 µA ∆ICC additional supply VI = VCC − 2.1 V; current per input IO = 0 4.5 to 5.5 − − 300 − 375 − 410 µA Note 1. All typical values are measured at Tamb = 25 °C. 2003 May 1 6 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 TRANSFER CHARACTERISTICS Type 74HC2G14 Over recommended operating conditions; voltage are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER Vt− Vh positive going threshold negative going threshold hysteresis (Vt+ - Vt−) see Figs. 5 and 6 see Figs. 5 and 6 see Figs. 5 and 6 −40 to +85 +25 VCC (V) WAVEFORMS Vt+ Tamb (°C) −40 to +125 UNIT MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX. 2.0 1.0 1.18 1.5 1.0 1.5 1.0 1.5 V 4.5 2.3 2.6 3.15 2.3 3.15 2.3 3.15 V 6.0 3.0 3.46 4.2 3.0 4.2 3.0 4.2 V 2.0 0.3 0.6 0.9 0.3 0.9 0.3 0.9 V 4.5 1.13 1.47 2.0 1.13 2.0 1.13 2.0 V 6.0 1.5 2.06 2.6 1.5 2.6 1.5 2.6 V 2.0 0.3 0.6 1.0 0.3 1.0 0.3 1.0 V 4.5 0.6 1.13 1.4 0.6 1.4 0.6 1.4 V 6.0 0.8 1.40 1.7 0.8 1.7 0.8 1.7 V Note 1. All typical values are measured at Tamb = 25 °C. Type 74HCT2G14 Over recommended operating conditions; voltage are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER positive going threshold see Figs. 5 and 6 Vt− negative going threshold see Figs. 5 and 6 hysteresis (Vt+ - Vt−) see Figs. 5 and 6 Vh −40 to +125 UNIT MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX. 4.5 1.2 1.58 1.9 1.2 1.9 1.2 1.9 V 5.5 1.4 1.78 2.1 1.4 2.1 1.4 2.1 V 4.5 0.5 0.87 1.2 0.5 1.2 0.5 1.2 V 5.5 0.6 1.11 1.4 0.6 1.4 0.6 1.4 V 4.5 0.4 0.71 − 0.4 − 0.4 − V 5.5 0.4 0.67 − 0.4 − 0.4 − V Note 1. All typical values are measured at Tamb = 25 °C. 2003 May 1 −40 to +85 +25 VCC (V) OTHER Vt+ Tamb (°C) 7 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 TRANSFER CHARACTERISTIC WAVEFORMS handbook, halfpage handbook, halfpage VI VO VT+ VH VT− VO MNA027 VH VT− VI VT+ MNA026 Fig.6 The definitions of VT+, VT− and VH; where VT+ and VT− are between limits of 20% and 70%. Fig.5 Transfer characteristic. MNA028 100 MNA029 1.0 handbook, halfpage handbook, halfpage ICC (mA) ICC (µA) 0.8 0.6 50 0.4 0.2 0 0 1.0 0 Fig.7 VI (V) 2.0 0 Typical HC2G transfer characteristics; VCC = 2.0 V. 2003 May 1 Fig.8 8 2.5 VI (V) 5.0 Typical HC2G transfer characteristics; VCC = 4.5 V. Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 MNA030 1.6 handbook, halfpage ICC (mA) 0.8 0 0 Fig.9 3.0 VI (V) 6.0 Typical HC2G transfer characteristics; VCC = 6.0 V. MNA031 2.0 handbook, halfpage MNA032 3.0 handbook, halfpage ICC (mA) ICC (mA) 2.0 1.0 1.0 0 0 2.5 VI (V) 0 5.0 0 Fig.10 Typical HCT2G transfer characteristics; VCC = 4.5 V. 2003 May 1 3.0 VI (V) 6.0 Fig.11 Typical HCT2G transfer characteristics; VCC = 5.5 V. 9 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 AC CHARACTERISTICS Type 74HC2G14 GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS tPHL/tPLH tTHL/tTLH Tamb (°C) VCC (V) −40 to +85 +25 −40 to +125 UNIT MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX. − 125 155 − − 16 25 − 31 − 38 ns 6.0 − 13 21 − 26 − 32 ns see Figs 12 and 13 2.0 − 20 75 − 95 − 110 ns output transition time 53 − propagation delay see Figs 12 and 13 2.0 nA to nY 4.5 190 ns 4.5 − 7 15 − 19 − 22 ns 6.0 − 5 13 − 16 − 19 ns Note 1. All typical values are measured at Tamb = 25 °C. Type 74HCT2G14 GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF. Tamb (°C) TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS VCC (V) −40 to +85 +25 −40 to +125 UNIT MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX. tPHL/tPLH propagation delay see Figs 12 and 13 4.5 nA to nY − 21 32 − 40 − 48 ns tTHL/tTLH output transition time − 6 15 − 19 − 22 ns see Figs 12 and 13 4.5 Note 1. All typical values are measured at Tamb = 25 °C. 2003 May 1 10 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 AC WAVEFORMS VI handbook, halfpage VM nA input VM GND t PHL t PLH VOH 90% VM VM nY output 10% VOL t THL t TLH MNA722 For HC2G: VM = 50%; VI = GND to VCC. For HCT2G: VM = 1.3 V; VI = GND to 3.0 V. Fig.12 The input (nA) to output (nY) propagation delays and output transition times. S1 handbook, full pagewidth VCC PULSE GENERATOR RL = VI VCC open GND 1 kΩ VO D.U.T. CL = 50 pF RT MNA742 TEST S1 tPLH/tPHL open tPLZ/tPZL VCC tPHZ/tPZH GND Definitions for test circuit: CL = load capacitance including jig and probe capacitance (see “AC characteristics”). RT = termination resistance should be equal to the output impedance Zo of the pulse generator. Fig.13 Load circuitry for switching times. 2003 May 1 11 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 APPLICATION INFORMATION The slow input rise and fall times cause additional power dissipation, this can be calculated using the following formula: MNA036 200 handbook, halfpage Pad = fi × (tr × ICCa + tf × ICCa) × VCC ICC(AV) (µA) Where: 150 Pad = additional power dissipation (µW) positive-going edge fi = input frequency (MHz) tr = input rise time (ns); 10% to 90% 100 tf = input fall time (ns); 90% to 10% ICCa = average additional supply current (µA). 50 Average ICCa differs with positive or negative input transitions, as shown in Fig.14 and Fig.15. negative-going edge HC2G14/HCT2G14 used in relaxation oscillator circuit, see Fig.16. 0 0 2.0 4.0 VCC (V) 6.0 Note to the application information: 1. All values given are typical unless otherwise specified. Fig.14 Average ICC for HC Schmitt-trigger devices; linear change of VI between 0.1VCC to 0.9VCC. MNA058 200 handbook, halfpage ICC(AV) (µA) R handbook, halfpage 150 positive-going edge C 100 MNA035 negative-going edge 50 1 1 For HC2G: f = --- ≈ ----------------------T 0.8 × RC 0 0 2 4 VCC (V) 6 1 1 For HCT2G: f = --- ≈ --------------------------T 0.67 × RC Fig.15 Average ICC for HCT Schmitt-trigger devices; linear change of VI between 0.1VCC to 0.9VCC. 2003 May 1 Fig.16 Relaxation oscillator using the HC2G/HCT2G14. 12 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2003 May 1 REFERENCES IEC JEDEC EIAJ SC-88 13 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2003 May 1 REFERENCES IEC JEDEC EIAJ SC-74 14 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 SOLDERING If wave soldering is used the following conditions must be observed for optimal results: Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Reflow soldering The footprint must incorporate solder thieves at the downstream end. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 220 °C for thick/large packages, and below 235 °C for small/thin packages. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Wave soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. To overcome these problems the double-wave soldering method was specifically developed. 2003 May 1 15 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE WAVE BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable(2) HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS not PLCC(3), SO, SOJ suitable LQFP, QFP, TQFP SSOP, TSSOP, VSO REFLOW(1) suitable suitable suitable not recommended(3)(4) suitable not recommended(5) suitable Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 2003 May 1 16 Philips Semiconductors Preliminary specification Inverting Schmitt-triggers 74HC2G14; 74HCT2G14 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 May 1 17