Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. PINNING - SOT404 PIN BUK9614-30 QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V PIN CONFIGURATION MAX. UNIT 30 69 125 175 14 V A W ˚C mΩ SYMBOL DESCRIPTION d mb 1 gate 2 drain 3 source mb drain g 2 1 s 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C - - 55 30 30 10 69 48 240 125 175 V V V A A A W ˚C TYP. MAX. UNIT - 1.2 K/W 50 - K/W MIN. MAX. UNIT - 2 kV THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient - Rth j-a minimum footprint, FR4 board ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model (100 pF, 1.5 kΩ) December 1997 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9614-30 STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage Gate threshold voltage VGS = 0 V; ID = 0.25 mA; VGS(TO) Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C IDSS Zero gate voltage drain current VDS = 30 V; VGS = 0 V; IGSS Gate source leakage current VGS = ±5 V; VDS = 0 V ±V(BR)GSS Gate-source breakdown voltage Drain-source on-state resistance IG = ±1 mA; RDS(ON) Tj = 175˚C Tj = 175˚C VGS = 5 V; ID = 25 A Tj = 175˚C MIN. TYP. MAX. UNIT 30 27 1.0 0.5 10 1.5 0.05 0.02 - 2.0 2.3 10 500 1 10 - V V V V V µA uA µA µA V - 12 - 14 26 mΩ mΩ MIN. TYP. MAX. UNIT 12 25 - S DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 25 A Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 69 A; VDD = 24 V; VGS = 5 V - 38 5 15 - nC nC nC Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 2000 480 220 - pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 15 V; ID = 25 A; VGS = 5 V; RG = 5 Ω - 30 80 100 50 45 130 140 75 ns ns ns ns Ld Ld Internal drain inductance Internal drain inductance - 3.5 4.5 - nH nH Ls Internal source inductance Measured from tab to centre of die Measured from drain lead solder point to centre of die Measured from source lead solder point to source bond pad - 7.5 - nH MIN. TYP. MAX. UNIT - - 69 A IF = 25 A; VGS = 0 V IF = 69 A; VGS = 0 V - 0.95 1.0 240 1.2 - A V V IF = 69 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 25 V - 65 0.1 - ns µC REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER IDR IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage trr Qrr Reverse recovery time Reverse recovery charge December 1997 CONDITIONS 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9614-30 AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS WDSS Drain-source non-repetitive unclamped inductive turn-off energy ID = 35 A; VDD ≤ 25 V; VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C December 1997 3 MIN. TYP. MAX. UNIT - - 125 mJ Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET 120 BUK9614-30 Normalised Power Derating PD% 10 Zth j-mb / (K/W) BUKx55-lv 110 100 90 D= 1 0.5 80 0.1 0.2 0.1 0.05 0.02 0.01 0 70 60 50 40 30 tp PD tp T D= 20 10 0 0 20 40 60 80 100 Tmb / C 120 140 160 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) 120 1E-05 1E-03 t/s 1E-01 1E+01 Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating ID% t T 0.001 1E-07 180 ID / A 100 110 100 6 80 90 BUK9514-30 10 4 5 3.5 80 60 70 VGS / V = 60 3 50 40 40 30 2.5 20 20 10 2 0 0 20 40 60 80 100 Tmb / C 120 140 160 0 180 ID / A 4 6 8 10 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS 7514-30 DS 2 VDS / V Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V 1000 0 40 RDS(ON) / mOhm 9514-30 4 / ID 4.5 VGS / V = V )= 30 tp = 10 us (ON S 100 RD 100 us 5 20 1 ms 10 1 6 10 ms 100 ms 1 10 VDS / V 10 0 100 20 40 60 80 10 100 ID / A Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp December 1997 0 8 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 4 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET 100 BUK9614-30 ID / A 9514-30 Tj / C = 25 80 BUK959-60 VGS(TO) / V 2.5 max. 175 2 typ. 60 1.5 40 1 20 0.5 min. 0 0 2 4 0 -100 6 VGS / V Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 60 gfs / S -50 0 50 Tj / C 100 150 200 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 9514-30 Sub-Threshold Conduction 1E-01 50 1E-02 40 Tj / C = 25 typ 98% 175 1E-04 20 10 0 2% 1E-03 30 1E-05 0 20 40 ID / A 60 80 100 1E-05 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V a 0.5 1 1.5 2 2.5 3 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS 30V TrenchMOS 2 0 10000 C / pF 9514-30 1.5 Ciss 1000 1 Coss 0.5 Crss 0 -100 -50 0 50 Tj / C 100 150 100 0.1 200 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V December 1997 1 VDS / V 10 100 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 5 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET 5 BUK9614-30 VGS / V 9514-30 120 WDSS% 110 100 4 VDS / V = 6 90 24 80 70 3 60 50 2 40 30 1 20 10 0 0 0 10 20 QG / nC 30 20 40 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 69 A; parameter VDS 100 IF / A 40 60 80 100 120 Tmb / C 140 160 180 Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 35 A 9514-30 VDD + L 80 VDS - 60 VGS -ID/100 40 Tj / C = 175 0 25 20 0 T.U.T. R 01 shunt RGS 0 0.5 1 VSDS / V 1.5 2 Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD ) Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj + VDD RD VDS - VGS 0 RG T.U.T. Fig.17. Switching test circuit. December 1997 6 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9614-30 MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.18. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.19. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". December 1997 7 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9614-30 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 8 Rev 1.100