BLS2933-100 Microwave power LDMOS transistor Rev. 01 — 1 August 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. Table 1: Typical performance tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production test circuit. VDS PL Gp ηD Mode of operation f IDq (GHz) (V) (W) (dB) (%) (mA) class AB 2.9 to 3.3 32 100 8 40 20 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n n n n n n Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ease of use 1.3 Applications n S-band radar applications BLS2933-100 Philips Semiconductors Microwave power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 3 [1] 2 2 3 sym112 [1] connected to flange 3. Ordering information Table 3. Ordering information Type number BLS2933-100 Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage - 15 V ID drain current - 12 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Zth(j-h) transient thermal impedance from Th = 25 °C; junction to heatsink tp = 200 µs; δ = 12 % BLS2933-100_1 Product data sheet Conditions Typ Unit 0.4 K/W © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 1 August 2006 2 of 12 BLS2933-100 Philips Semiconductors Microwave power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.1 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 2.5 3.1 3.5 V VGSq gate-source quiescent voltage VDS = 28 V; IDS = 900 mA - 3.3 4.5 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2 µA IDSX drain cut-off current VGS = VGS(th) + 9 V; VDS = 10 V 27 30 - A IGSS gate leakage current VGS = 15 V; VDS = 0 V - - 200 nA gfs forward transconductance VDS = 10 V; ID = 10 A - 9.0 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 6 A - 0.09 - Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 2.5 - pF 7. Application information Table 7. Application information RF performance in common source class-AB circuit; Th = 25 °C; tp = 200 µs; δ = 12 %; Zth(mb-h) = 0.15 K/W; unless otherwise specified. Symbol Parameter Min Typ Max Unit foper operating frequency Conditions 2.9 - 3.3 GHz VCC supply voltage - - 32 V tp pulse duration - 200 - µs δ duty cycle - 12 - % PL output power 100 - - W PL(1dB) output power at 1 dB gain compression - 120 - W Gp power gain 6 8 - dB ηD drain efficiency 33 40 - % Pdroop(pulse) pulse droop power - 0.1 0.5 dB tr rise time - 20 50 ns tf fall time - 6 50 ns VSWRload load voltage standing wave ratio 10 : 1 - - IRL input return loss - −10 - BLS2933-100_1 Product data sheet dB © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 1 August 2006 3 of 12 BLS2933-100 Philips Semiconductors Microwave power LDMOS transistor Table 8. Typical impedance f ZS ZL GHz Ω Ω 2.9 3.3 − j5.6 3.5 − j3.3 3.0 3.7 − j5.3 3.1 − j3.6 3.1 5.9 − j5.8 3.3 − j3.3 3.2 6.8 − j3.4 3.2 − j3.5 3.3 6.6 − j2.7 3.1 − j3.6 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS2933-100 is capable of withstanding a load mismatch corresponding to VSWR > 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 20 mA; PL = 100 W pulsed, tp = 200 µs; δ = 12 %. BLS2933-100_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 1 August 2006 4 of 12 BLS2933-100 Philips Semiconductors Microwave power LDMOS transistor 001aaf066 10 50 ηD (%) Gp (dB) ηD 8 001aaf070 10 Gp (dB) 40 (1) (2) (3) 8 Gp (4) (5) 6 30 6 4 20 4 2 10 2 0 2.8 3.0 0 0 3.4 3.2 0 40 80 120 f (GHz) 160 PL (W) VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %; PL = 100 W. (1) f = 2.9 MHz. (2) f = 3.0 MHz. (3) f = 3.1 MHz. (4) f = 3.2 MHz. (5) f = 3.3 MHz. VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %. Fig 2. Power gain and drain efficiency as functions of frequency; typical values 001aaf071 50 (1) (2) (3) (4) (5) ηD (%) 40 Fig 3. Power gain as a function of load power; typical values 001aaf072 160 PL (W) (1) (2) (3) (4) (5) 120 30 80 20 40 10 0 0 0 40 80 120 160 0 PL (W) 20 30 Pi (W) (1) f = 2.9 MHz. (1) f = 2.9 MHz. (2) f = 3.0 MHz. (2) f = 3.0 MHz. (3) f = 3.1 MHz. (3) f = 3.1 MHz. (4) f = 3.2 MHz. (4) f = 3.2 MHz. (5) f = 3.3 MHz. (5) f = 3.3 MHz. VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %. Fig 4. Efficiency as a function of power load; typical values VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %. Fig 5. Load power as a function of input power; typical values BLS2933-100_1 Product data sheet 10 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 1 August 2006 5 of 12 BLS2933-100 Philips Semiconductors Microwave power LDMOS transistor 001aaf073 12 001aaf074 10 Gp (dB) Gp (dB) 10 (1) (2) (3) 8 (3) (2) (1) 8 6 2.8 6 3.0 3.2 4 2.8 3.4 3.0 f (GHz) 3.2 3.4 f (GHz) (1) IDq = 20 mA. (1) tp = 100 µs. (2) IDq = 150 mA. (2) tp = 300 µs. (3) IDq = 500 mA. (3) tp = 500 µs. VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %; PL = 100 W. VDS = 32 V; IDq = 20 mA; tp = 100 µs, 200 µs and 500 µs; δ = 10 %; PL = 100 W. Fig 6. Power gain as a function of frequency and IDq; typical values Fig 7. Power gain as a function of frequency; typical values 001aaf081 50 ηD (%) 45 (1) (2) (3) 40 35 2.8 3.0 3.2 3.4 f (GHz) (1) tp = 100 µs. (2) tp = 300 µs. (3) tp = 500 µs. VDS = 32 V; IDq = 20 mA; δ = 10 %; PL = 100 W. Fig 8. Efficiency as a function of frequency; typical values BLS2933-100_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 1 August 2006 6 of 12 BLS2933-100 Philips Semiconductors Microwave power LDMOS transistor 001aaf082 1.0 Zth (K/W) 0.8 0.6 0.4 (1) (2) (3) (4) (5) 0.2 0 10−5 10−4 10−3 10−2 tp (s) (1) 1 % duty cycle (2) 2 % duty cycle (3) 5 % duty cycle (4) 10 % duty cycle (5) 20 % duty cycle Fig 9. Thermal resistance as function of pulse duration and duty cycle; typical values 001aaf083 800 Pmax (W) (1) (2) (3) (4) 600 400 200 0 10−5 10−4 10−3 10−2 tp (s) Th = 70 °C (1) 1 % duty cycle (2) 2 % duty cycle (3) 10 % duty cycle (4) 20 % duty cycle Fig 10. Maximum allowable dissipated power as function of pulse duration and duty cycle for reaching 200 °C junction temperature BLS2933-100_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 1 August 2006 7 of 12 BLS2933-100 Philips Semiconductors Microwave power LDMOS transistor 8. Test information C3 C2 C4 C5 C6 +Vgs +Vds C7 C8 C9 R1 C12 C11 R2 L1 C1 C10 BLS2933-100 in BLS2933-100 out 001aaf084 The components are situated on one side of the copper-clad Duroid 6006 Printed-Circuit Board (PCB). Both the input and output PCB are 40 mm × 60 mm with εr = 6.15 and thickness 0.64 mm. See Table 9 for list of components Fig 11. Component layout for test circuit Table 9. List of components (see Figure 11) Component Description Value Dimensions Catalogue number C1, C2, C4, C5, multilayer ceramic chip capacitor C6, C7, C10 [1] 22 pF C3, C8, C9 multilayer ceramic chip capacitor [2] 470 pF C11 tantalum capacitor 4.7 µF; 50 V C12 electrolytic capacitor 220 µF; 63 V R1 resistor 560 Ω R2 metafilm resistor 49.9 Ω; 0.6 W L1 copper wire 1 mm diameter N1 N-connector male Suhner 13N-50-057/1 N2 N-connector female Suhner 23N-50-057/1 Kemet T491D475K050AS SMD 0805 length of loop = 20 mm; height of loop = 10 mm [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLS2933-100_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 1 August 2006 8 of 12 BLS2933-100 Philips Semiconductors Microwave power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 12. Package outline SOT502A BLS2933-100_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 1 August 2006 9 of 12 BLS2933-100 Philips Semiconductors Microwave power LDMOS transistor 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLS2933-100_1 20060801 Product data sheet - - BLS2933-100_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 1 August 2006 10 of 12 BLS2933-100 Philips Semiconductors Microwave power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] BLS2933-100_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 1 August 2006 11 of 12 Philips Semiconductors BLS2933-100 Microwave power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: [email protected]. Date of release: 1 August 2006 Document identifier: BLS2933-100_1