PESDxS4UD series Quadruple ESD protection diode arrays in a SOT457 package Rev. 02 — 21 August 2009 Product data sheet 1. Product profile 1.1 General description Quadruple ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package designed to protect up to 4 signal lines from the damage caused by ESD and other transients. 1.2 Features n n n n ESD protection of up to 4 lines Max. peak pulse power: PPP = 200 W Ultra low leakage current: IRM = 50 pA Low clamping voltage: VCL = 12 V at IPP = 20 A n ESD protection up to 30 kV n IEC 61000-4-2; level 4 (ESD) n IEC 61000-4-5; (surge); IPP up to 20 A 1.3 Applications n Computers and peripherals n Audio and video equipment n Cellular handsets and accessories n Communication systems n Portable electronics n Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit PESD3V3S4UD - - 3.3 V PESD5V0S4UD - - 5 V PESD12VS4UD - - 12 V PESD15VS4UD - - 15 V PESD24VS4UD - - 24 V Per diode VRWM reverse standoff voltage PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package Table 1. Quick reference data …continued Symbol Parameter Conditions Cd diode capacitance f = 1 MHz; VR = 0 V Min Typ Max Unit PESD3V3S4UD - 215 300 pF PESD5V0S4UD - 165 220 pF PESD12VS4UD - 73 100 pF PESD15VS4UD - 60 90 pF PESD24VS4UD - 45 70 pF 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 common anode 3 cathode 2 4 cathode 3 5 common anode 6 cathode 4 Simplified outline 6 1 5 2 Symbol 4 3 1 6 2 5 3 4 006aaa156 3. Ordering information Table 3. Ordering information Type number PESD3V3S4UD Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD 4. Marking Table 4. Marking codes Type number Marking code PESD3V3S4UD K4 PESD5V0S4UD K5 PESD12VS4UD K6 PESD15VS4UD K7 PESD24VS4UD K8 PESDXS4UD_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 August 2009 2 of 12 PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit - 200 W PESD3V3S4UD - 20 A PESD5V0S4UD - 20 A PESD12VS4UD - 10 A PESD15VS4UD - 6 A PESD24VS4UD - 4 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C PPP IPP Parameter Conditions peak pulse power tp = 8/20 µs [1][2] peak pulse current tp = 8/20 µs [1][2] [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4 or 6 to 2 or 5 Table 6. ESD maximum ratings Symbol Parameter Conditions VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) PESD3V3S4UD Unit - 30 kV - 30 kV PESD12VS4UD - 30 kV PESD15VS4UD - 30 kV PESD24VS4UD - 23 kV - 10 kV HBM MIL-STD-883 [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1, 3, 4 or 6 to 2 or 5 ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD-883; class 3 > 10 kV PESDXS4UD_SER_2 Product data sheet Max PESD5V0S4UD PESDxS4UD series Table 7. Min [1][2] © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 August 2009 3 of 12 PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit PESD3V3S4UD - - 3.3 V PESD5V0S4UD - - 5 V PESD12VS4UD - - 12 V PESD15VS4UD - - 15 V PESD24VS4UD - - 24 V Per diode VRWM IRM reverse standoff voltage reverse leakage current PESD3V3S4UD VRWM = 3.3 V - 300 800 nA PESD5V0S4UD VRWM = 5 V - 80 200 nA PESD12VS4UD VRWM = 12 V - 0.05 15 nA PESD15VS4UD VRWM = 15 V - 0.05 15 nA VRWM = 24 V - 0.05 15 nA PESD3V3S4UD 5.3 5.6 5.9 V PESD5V0S4UD 6.4 6.8 7.2 V PESD12VS4UD 12.5 14.5 16 V PESD15VS4UD 15.5 18 20.5 V PESD24VS4UD 25.5 27 29 V PESD24VS4UD VBR breakdown voltage IR = 1 mA PESDXS4UD_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 August 2009 4 of 12 PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Cd diode capacitance f = 1 MHz; VR = 0 V PESD3V3S4UD Max Unit - 215 300 pF - 165 220 pF PESD12VS4UD - 73 100 pF PESD15VS4UD - 60 90 pF - 45 70 pF IPP = 1 A - - 8 V IPP = 20 A - - 12 V IPP = 1 A - - 8 V IPP = 20 A - - 13 V IPP = 1 A - - 17 V IPP = 10 A - - 24 V IPP = 1 A - - 22 V IPP = 6 A - - 33 V IPP = 1 A - - 33 V IPP = 4 A - - 52 V IR = 5 mA - - 25 Ω [1][2] clamping voltage PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD differential resistance rdif Typ PESD5V0S4UD PESD24VS4UD VCL Min [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4 or 6 to 2 or 5 006aaa698 104 PPP (W) 001aaa633 1.2 PPP PPP(25°C) 103 0.8 102 0.4 10 1 1 10 102 103 0 104 0 tp (µs) 50 100 150 200 Tj (°C) Tamb = 25 °C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values PESDXS4UD_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 August 2009 5 of 12 PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 006aaa700 220 Cd (pF) 006aaa701 80 Cd (pF) 180 60 140 40 (1) (1) (2) (2) 100 20 60 (3) 0 0 1 2 3 4 5 0 5 10 15 20 VR (V) 25 VR (V) f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C (1) PESD3V3S4UD (1) PESD12VS4UD (2) PESD5V0S4UD (2) PESD15VS4UD (3) PESD24VS4UD Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values I 006aaa699 10 IRM IRM(25°C) −VCL −VBR −VRWM V −IRM −IR 1 − + P-N 10−1 −100 −50 0 50 100 −IPP 150 Tj (°C) 006aaa407 PESD3V3S4UD PESD5V0S4UD IR is less than 5 nA at 150 °C PESD12VS4UD PESD15VS4UD PESD24VS4UD Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values Fig 8. V-I characteristics for a unidirectional ESD protection diode PESDXS4UD_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 August 2009 6 of 12 PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package ESD TESTER 450 Ω Rd RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω Cs IEC 61000-4-2 network Cs = 150 pF; Rd = 330 Ω DUT (DEVICE UNDER TEST) vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div PESD24VS4UD GND PESD15VS4UD GND PESD12VS4UD GND PESD5V0S4UD GND GND PESD3V3S4UD GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig 9. vertical scale = 10 V/div horizontal scale = 50 ns/div clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa761 ESD clamping test setup and waveforms PESDXS4UD_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 August 2009 7 of 12 PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 7. Application information The PESDxS4UD series is designed for protection of up to 4 unidirectional data lines from the damage caused by ESD and surge pulses. The PESDxS4UD series may be used on lines where the signal polarities are above or below ground. The PESDxS4UD series provides a surge capability of 200 W per line for an 8/20 µs waveform. data- or transmission lines 1 6 2 5 3 4 unidirectional protection of 4 lines n.c. 1 6 2 5 3 4 n.c. bidirectional protection of 3 lines 006aaa762 Fig 10. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxS4UD as close to the input terminal or connector as possible. 2. The path length between the PESDxS4UD and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESDXS4UD_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 August 2009 8 of 12 PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 8. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 11. Package outline SOT457 (SC-74) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD Package SOT457 SOT457 SOT457 SOT457 SOT457 Description 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 12. [2] T1: normal taping [3] T2: reverse taping PESDXS4UD_SER_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 August 2009 9 of 12 PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXS4UD_SER_2 20090821 Product data sheet - PESDXS4UD_SER_1 Modifications: PESDXS4UD_SER_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. 20060704 Product data sheet PESDXS4UD_SER_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 August 2009 10 of 12 PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESDXS4UD_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 21 August 2009 11 of 12 PESDxS4UD series NXP Semiconductors Quadruple ESD protection diode arrays in a SOT457 package 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 August 2009 Document identifier: PESDXS4UD_SER_2