Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR2045CTF, PBYR2045CTX series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Isolated mounting tab QUICK REFERENCE DATA VR = 40 V/ 45 V a2 3 a1 1 IO(AV) = 20 A VF ≤ 0.57V k 2 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2045CTF series is supplied in the SOT186 package. The PBYR2045CTX series is supplied in the SOT186A package. PINNING SOT186 PIN SOT186A DESCRIPTION case case 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab 1 2 3 1 2 3 isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. PBYR20 PBYR20 VRRM VRWM VR IO(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature October 1998 MAX. UNIT - 40CTF 40CTX 40 45CTF 45CTX 45 V - 40 45 V Ths ≤ 84 ˚C - 40 45 V square wave; δ = 0.5; Ths ≤ 78 ˚C - 20 A square wave; δ = 0.5; Ths ≤ 78 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 20 A - 100 110 A A - 1 A - 150 ˚C - 65 175 ˚C 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR2045CTF, PBYR2045CTX series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Peak isolation voltage from all terminals to external heatsink SOT186 package; R.H. ≤ 65%; clean and dustfree MIN. Visol Cisol TYP. MAX. UNIT - - 1500 V R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree - - 2500 V Capacitance from pin 2 to external heatsink - 10 - pF f = 1 MHz THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. Rth j-hs Thermal resistance junction to heatsink Rth j-a Thermal resistance junction to ambient per diode both diodes (with heatsink compound) in free air TYP. MAX. UNIT - - 6 5 K/W K/W - 55 - K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Cd Junction capacitance IF = 10 A; Tj = 125˚C IF = 20 A; Tj = 125˚C IF = 20 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C October 1998 MIN. 2 - TYP. MAX. UNIT 0.45 0.64 0.64 0.3 22 380 0.57 0.72 0.84 1.3 35 - V V V mA mA pF Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR2045CTF, PBYR2045CTX series Ths(max) (C) PBYR1045 Forward dissipation, PF (W) 10 Vo = 0.42 V Rs = 0.015 Ohms 90 PBYR2045CT Reverse current, IR (mA) 100 D = 1.0 8 125 C 102 10 0.5 100 C 6 114 0.2 0.1 126 4 I tp D= 50 C tp T 0.1 138 2 0 150 15 5 10 Average forward current, IF(AV) (A) 0.01 0 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. 7 a = 1.57 2.2 6 Ths(max) (C) PBYR1045 Forward dissipation, PF (W) Vo = 0.42 V Rs = 0.015 Ohms 120 126 3 132 2 138 1 144 100 10 150 10 2 4 6 8 Average forward current, IF(AV) (A) 1 100 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. PBYR2045CT Forward current, IF (A) 10 VR / V Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 50 PBYR2045CT Cd / pF 1000 114 2.8 0 50 Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj 102 4 0 25 Reverse voltage, VR (V) 108 1.9 4 5 Tj = 25 C t T 0 8 75 C 1 10 Transient thermal impedance, Zth j-hs (K/W) Tj = 25 C Tj = 125 C 40 1 30 typ 20 0.1 max PD tp D= 10 T 0 0.01 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 1.4 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 1us 10us 100us tp T t 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR2045ctx Fig.6. Transient thermal impedance per diode; Zth j-hs = f(tp). 3 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR2045CTF, PBYR2045CTX series MECHANICAL DATA Dimensions in mm 10.2 max 5.7 max 3.2 3.0 Net Mass: 2 g 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min 1 0.4 2 3 0.9 0.7 M 0.55 max 2.54 1.3 5.08 top view Fig.7. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 4 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR2045CTF, PBYR2045CTX series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.8. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 5 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR2045CTF, PBYR2045CTX series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 6 Rev 1.300