DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV2100 Fast soft-recovery controlled avalanche rectifier Product specification 1996 Oct 07 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 FEATURES DESCRIPTION • Glass passivated Rugged glass SOD57 package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability 2/3 page k(Datasheet) • Available in ammo-pack. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF(AV) average forward current Ttp = 80 °C; lead length = 10 mm; averaged over any 20 ms period; see Fig.2; see also Fig.4 − 2.0 A Tamb = 60 °C; PCB mounting (see Fig.12); averaged over any 20 ms period; see Fig.3; see also Fig.4 − 1.3 A Ttp = 80 °C; see Fig.6 − 18 A Tamb = 60 °C; see Fig.7 − 12 A IFRM repetitive peak forward current IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 50 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1996 Oct 07 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage IF = 2 A; Tj = Tj max; see Fig.5 V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA IR reverse current MIN. TYP. − − 0.78 V UNIT − − 0.98 V 120 − − V VR = VRRMmax; see Fig.8 − − 5 µA VR = VRRMmax; Tj = 165 °C; see Fig.8 − − 150 µA when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 − − 12.5 ns − pF IF = 2 A; see Fig.5 trr reverse recovery time Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.9 − 135 maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.11 − − dI R -------dt MAX. 2 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.12. For more information please refer to the “General Part of associated Handbook”. 1996 Oct 07 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 GRAPHICAL DATA MGD737 3 MGD738 2.0 handbook, halfpage handbook, halfpage IF(AV) (A) IF(AV) (A) 1.6 2 1.2 0.8 1 0.4 0 0 0 100 200 Ttp (°C) 100 0 Switched mode application. a = 1.42; δ = 0.5; VR = VRRMmax. Switched mode application. a = 1.42; δ = 0.5; VR = VRRMmax. Device mounted as shown in Fig.12. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MGD739 3 Tamb (°C) 200 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGD740 6 handbook, halfpage handbook, halfpage P (W) a = 3 2.5 2 IF (A) 1.57 1.42 2 4 1 2 0 0 0 1 2 IF(AV) (A) 0 3 1 VF (V) 2 a = IF(RMS)/IF(AV); δ = 0.5; VR = VRRMmax. Fig.4 1996 Oct 07 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.5 4 Maximum forward voltage as a function of forward current. Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 MGD741 20 handbook, full pagewidth IFRM (A) δ = 0.05 16 12 0.1 8 0.2 0.5 4 1 0 10−2 10−1 1 10 102 103 tp (ms) 104 Ttp = 80 °C; Rth j-tp = 46 K/W; VR = VRRMmax during 1 − δ. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGD742 16 handbook, full pagewidth IFRM (A) 12 δ = 0.05 8 0.1 0.2 4 0.5 1 0 10−2 10−1 1 10 102 103 tp (ms) 104 Tamb = 60 °C; Rth j-a = 100 K/W; VR = VRRMmax during 1 − δ. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Oct 07 5 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 MGC550 103 handbook, halfpage MGD743 102 handbook, halfpage IR (µA) Cd (pF) 102 10 1 10 0 100 Tj (°C) 200 10 102 VR (V) f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.8 1 Reverse current as a function of junction temperature; maximum values. Fig.9 IF (A) handbook, full pagewidth DUT 0.5 t rr 0 50 Ω 0.5 A Diode capacitance as a function of reverse voltage; typical values. t 0.25 0.5 IR (A) 1.0 Rise time oscilloscope: tr ≤ 2 ns. Turn-on time switch: t ≤ 3 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 Oct 07 6 MAM282 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 50 handbook, halfpage 25 IF halfpage andbook, dI F dt 7 50 t rr 10% t dI R dt 100% IR 2 MGC499 3 MGA200 Dimensions in mm. Fig.11 Reverse recovery definitions. 1996 Oct 07 Fig.12 Device mounted on a printed-circuit board. 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 PACKAGE OUTLINE handbook, full pagewidth k 3.81 max 28 min Dimensions in mm. The marking band indicates the cathode. , 4.57 max a 28 min 0.81 max MBC880 Fig.13 SOD57. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 07 8