BUK7775-55A N-channel TrenchMOS™ standard level FET Rev. 02 — 7 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK7775-55A in SOT186A (TO-220F). 2. Features ■ ■ ■ ■ TrenchMOS™ technology Q101 compliant 150 °C rated Standard level compatible. 3. Applications ■ Automotive and general purpose power switching: ◆ 12 V and 24 V loads ◆ Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT186A, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; isolated Simplified outline Symbol mb d g mbb076 1 2 3 MBK110 SOT186A (TO-220F) 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. s BUK7775-55A Philips Semiconductors N-channel TrenchMOS™ standard level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit - 55 V VDS drain-source voltage (DC) ID drain current (DC) Tmb = 25 °C; VGS = 10 V - 11 A Ptot total power dissipation Tmb = 25 °C - 18 W Tj junction temperature - 150 °C RDSon drain-source on-state resistance Tj = 25 °C 63 75 mΩ Tj = 150 °C - 138 mΩ VGS = 10 V; ID = 10 A 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Conditions Min Max Unit - 55 V - 55 V - ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 - 11 A Tmb = 100 °C; VGS = 10 V; Figure 2 - 8 A [1] - 46 A - 18 W RGS = 20 kΩ IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Ptot total power dissipation Tmb = 25 °C; Figure 1 Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +150 °C Source-drain diode IDR reverse drain current (DC) Tmb = 25 °C - 11 A IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 46 A unclamped inductive load; ID = 11 A; VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω; starting T j = 25 °C - 50 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] IDM is limited by chip, not package. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13325 Product data Rev. 02 — 7 June 2004 2 of 12 BUK7775-55A Philips Semiconductors N-channel TrenchMOS™ standard level FET 03ne36 120 03ne37 120 Pder (%) 100 Ider (%) 100 80 80 60 60 40 40 20 20 0 0 0 25 50 75 100 0 125 150 175 Tmb (oC) 25 50 75 100 125 150 175 o Tmb ( C) VGS ≥ 10 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 102 ID (A) 03ne03 limit RDSon = VDS/ ID tp = 10 µs 10 100 µs 1 ms DC 1 10 ms 100 ms 10-1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13325 Product data Rev. 02 — 7 June 2004 3 of 12 BUK7775-55A Philips Semiconductors N-channel TrenchMOS™ standard level FET 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Figure 4 - - 6.8 K/W - 55 - K/W Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient vertical in still air 7.1 Transient thermal impedance 03ne02 10 Zth(j-mb) (K/W) δ = 0.5 0.2 1 0.1 0.05 0.02 δ= P 10-1 Single Shot tp T t tp T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13325 Product data Rev. 02 — 7 June 2004 4 of 12 BUK7775-55A Philips Semiconductors N-channel TrenchMOS™ standard level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 55 - - V Tj = −55 °C 50 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 2 3 4 V Tj = 150 °C 1.2 - - V Tj = −55 °C - - 4.4 V Tj = 25 °C - 0.05 10 µA Tj = 150 °C - - 500 µA - 2 100 nA Tj = 25 °C - 63 75 mΩ Tj = 150 °C - - 138 mΩ - 9.8 - nC - 2 - nC - 4.7 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 - 320 483 pF - 90 113 pF - 60 90 pF VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; RG = 10 Ω - 10 - ns - 50 - ns - 70 - ns VDS = 55 V; VGS = 0 V IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 10 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge VGS = 10 V; VDD = 44 V; ID = 10 A; Figure 14 Qgs gate-to-source charge Qgd gate-to-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time - 40 - ns Ld internal drain inductance from drain lead 6 mm from package to centre of die - 4.5 - nH Ls internal source inductance from source lead 6 mm from package to source bond pad - 7.5 - nH Source-drain diode VSD source-drain (diode forward) voltage IS = 15 A; VGS = 0 V; Figure 15 - 0.85 1.2 V trr reverse recovery time - 32 - ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V - 120 - nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13325 Product data Rev. 02 — 7 June 2004 5 of 12 BUK7775-55A Philips Semiconductors N-channel TrenchMOS™ standard level FET 03nc09 60 ID (A) 50 03nc08 160 RDSon (mΩ) 140 VGS (V) = 16 14 20 12 10.5 40 120 9.5 30 8.5 100 7.5 20 80 6.5 10 60 5.5 4.5 0 40 0 2 4 6 8 10 VDS (V) 5 Tj = 25 °C 15 VGS (V) 20 Tj = 25 °C; ID = 10 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 03nc10 180 RDSon (mΩ) 160 10 5.5 6 6.5 7 8 VGS (V) =10 Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03nc24 2.2 a 2 1.8 1.6 140 1.4 1.2 120 1 100 0.8 0.6 80 0.4 60 0.2 0 40 0 10 20 30 40 ID (A) -60 50 Tj = 25 °C 20 60 100 140 180 o Tj ( C) R DSon a = --------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13325 Product data -20 Rev. 02 — 7 June 2004 6 of 12 BUK7775-55A Philips Semiconductors N-channel TrenchMOS™ standard level FET 03aa32 5 VGS(th) (V) 03aa35 10-1 ID (A) 4 max 10-2 3 typ 10-3 2 min 10-4 min typ max 10-5 1 0 -60 10-6 0 60 120 Tj (°C) 180 0 2 4 VGS (V) 6 Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03nc06 8 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03nc11 600 C (pF) gfs (S) 500 6 400 Ciss 300 4 200 2 100 Coss Crss 0 0 0 5 10 15 20 ID (A) 10-2 25 Tj = 25 °C; VDS = 25 V 1 10 102 VDS (V) VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13325 Product data 10-1 Rev. 02 — 7 June 2004 7 of 12 BUK7775-55A Philips Semiconductors N-channel TrenchMOS™ standard level FET 03ne10 25 ID (A) 03nc05 10 VGS (V) 9 20 VDD= 44 V 8 VDD= 14 V 7 15 6 5 10 4 3 5 2 Tj = 150 OC 1 O Tj = 25 C 0 0 0 2 4 6 8 10 VGS (V) 0 5 10 QG (nC) 15 Tj = 25 °C; ID = 10 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03ne11 120 IS (A) 100 80 60 O Tj = 150 C 40 O Tj = 25 C 20 0 0.0 0.5 1.0 1.5 VSD (V) 2.0 VGS = 0 V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13325 Product data Rev. 02 — 7 June 2004 8 of 12 BUK7775-55A Philips Semiconductors N-channel TrenchMOS™ standard level FET 9. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-03-12 02-04-09 Fig 16. SOT186A. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13325 Product data Rev. 02 — 7 June 2004 9 of 12 BUK7775-55A Philips Semiconductors N-channel TrenchMOS™ standard level FET 10. Revision history Table 6: Revision history Rev Date 02 20040607 CPCN Description - Product data (9397 750 13325) Modifications: • 01 20010215 - Latest version of package outline imported into data sheet. Product specification (9397 750 07996) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13325 Product data Rev. 02 — 7 June 2004 10 of 12 BUK7775-55A Philips Semiconductors N-channel TrenchMOS™ standard level FET 11. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13325 Rev. 02 — 7 June 2004 11 of 12 Philips Semiconductors BUK7775-55A N-channel TrenchMOS™ standard level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 7 June 2004 Document order number: 9397 750 13325