PHILIPS BLS2731-20

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D324
BLS2731-20
Microwave power transistor
Product specification
Supersedes data of 1998 Mar 06
1998 Nov 25
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-20
FEATURES
PINNING - SOT445C
• Suitable for short and medium pulse applications
PIN
• Internal input and output matching networks for an easy
circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
1
handbook, halfpage
APPLICATIONS
• Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.
3
2
Top view
MBK132
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common base class-C test circuit.
MODE OF OPERATION
Pulsed class-C
f
(GHz)
VCB
(V)
PL
(W)
Gp
(dB)
ηC
(%)
2.7 to 3.1
40
25
typ. 10
typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Nov 25
2
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
75
V
VCES
collector-emitter voltage
RBE = 0
−
75
V
VEBO
emitter-base voltage
open collector
−
2
V
ICM
peak collector current
tp ≤ 100 µs; δ ≤ 10%
−
3
A
Ptot
total power dissipation
tp = 100 µs; δ = 10%;
Tmb = 25 °C
−
270
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
up to 0.2 mm from ceramic cap;
t ≤ 10 s
THERMAL CHARACTERISTICS
SYMBOL
Zth j-h
PARAMETER
CONDITIONS
VALUE
tp = 100 µs; δ = 10%; note 1
thermal impedance from junction to heatsink
0.65
UNIT
K/W
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 5 mA; open emitter
75
−
−
V
V(BR)CES
collector-emitter breakdown
voltage
IC = 5 mA; VBE = 0
75
−
−
V
ICBO
collector leakage current
VCB = 40 V; IE = 0
−
−
0.5
mA
ICES
collector leakage current
VCE = 40 V; VBE = 0
−
−
0.5
mA
IEBO
emitter leakage current
VEB = 1.5 V; IC = 0
−
−
0.1
mA
hFE
DC current gain
VCB = 5 V; IC = 0.5 A
40
−
−
Cc
collector capacitance (die only)
VCE = 1 V; IE = ie = 0; f = 1 MHz
−
10
−
pF
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common-base test circuit.
MODE OF OPERATION
Class-C; tp = 100 µs; δ = 10%
1998 Nov 25
f
(GHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
2.7 to 3.1
40
≥20
typ. 25
≥9
typ. 10
≥35
typ. 40
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-20
MGR732
MGR731
16
25
handbook, halfpage
handbook, halfpage
PL
(W)
(1)
(2)
Gp
(dB)
(3)
20
12
15
8
10
4
5
0
2.7
0
0
0.5
1
1.5
2
2.5
2.8
2.9
3.0
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 2.7 GHz.
(3) f = 2.9 GHz.
Fig.2
3.1
f (GHz)
PD (W)
VCB = 40 V; class-C; PL = 20 W; tp = 100 µs; δ = 10%.
Load power as a function of drive power;
typical values.
Fig.3
MGR733
Power gain as function of frequency;
typical values.
MGR734
20
25
handbook, halfpage
handbook, halfpage
ZL
Zi
(Ω)
(Ω)
xi
10
ri
15
RL
15
20
5
10
0
5
−5
0
2.7
2.8
2.9
3.0
f (GHz)
XL
−10
2.7
3.1
2.8
VCB = 40 V; class-C; PL = 20 W.
VCB = 40 V; class-C; PL = 20 W.
Fig.4
Fig.5
Input impedance as function of frequency
(series components); typical values.
1998 Nov 25
4
2.9
3.0
f (GHz)
3.1
Load impedance as function of frequency
(series components); typical values.
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-20
30
handbook, full pagewidth
30
40
C1
C2
C3
input
50 Ω
output
50 Ω
C4
MGR730
Dimensions in mm.
The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
The striplines are on double-clad printed-circuit board with Duroid dielectric (εr = 2.2); thickness = 0.38 mm.
Fig.6
Component layout for 2.7 to 3.1 GHz class-C test circuit.
List of components
COMPONENT
DESCRIPTION
VALUE
C1
multilayer ceramic chip capacitor; note 1
1 nF
C2
multilayer ceramic chip capacitor; note 2
10 pF
C3
multilayer ceramic chip capacitor; note 3
150 pF
C4
Tekelec trimmer type 37281SL
0.4 to 2.5 pF
Notes
1. American Technical Ceramics type 200A or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. American Technical Ceramics type 700A or capacitor of same quality.
1998 Nov 25
5
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-20
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
SOT445C
D
A
F
3
D1
D2
U1
B
q
c
C
1
H
U2
E2 E1
w1 M A B
p
A
E
2
w2 M C
b
0
Q
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D1
D2
E
E1
E2
F
H
p
Q
q
U1
U2
w1
w2
mm
5.57
4.70
3.15
2.95
0.15
0.09
8.13
7.87
7.65
7.35
8.15
7.85
4.20
3.93
4.25
3.95
5.31
5.01
1.82
1.22
15.84
14.64
3.35
3.05
3.33
3.03
14.22
20.47
20.17
5.18
4.98
0.51
1.02
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT445C
1998 Nov 25
EUROPEAN
PROJECTION
ISSUE DATE
97-05-23
6
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-20
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Nov 25
7
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
125108/00/04/pp8
Date of release: 1998 Nov 25
Document order number:
9397 750 04722