Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies with 3 V - 3.3 V outputs, or as or-ing diodes in fault tolerant power supply systems. PINNING - TO220AB PIN PBYR2525CT series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab cathode (k) MAX. MAX. UNIT PBYR25Repetitive peak reverse voltage Forward voltage Average output current (both diodes conducting) 20CT 20 25CT 25 V 0.41 30 0.41 30 V A PIN CONFIGURATION DESCRIPTION 1 PARAMETER SYMBOL tab a2 3 a1 1 k2 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 109 ˚C IO(AV) Average output current (both diodes conducting) RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode IO(RMS) IFRM IFSM I2t IRRM IRSM Tstg Tj CONDITIONS square wave; δ = 0.5; Tmb ≤ 135 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 135 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature January 1997 1 MIN. - MAX. -20 20 20 20 UNIT -25 25 25 25 V V V - 30 A - 43 A - 30 A - 180 200 A A - 162 2 A2s A - 2 A -65 - 175 150 ˚C ˚C Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier PBYR2525CT series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient per diode both diodes in free air Rth j-a MIN. TYP. MAX. UNIT - 60 1.5 1.0 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.33 0.43 0.51 2.0 30 900 0.41 0.50 0.60 10 80 - V V V mA mA pF STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage (per diode) IR Reverse current (per diode) Cd Junction capacitance (per diode) IF = 15 A; Tj = 125˚C IF = 30 A; Tj = 125˚C IF = 30 A VR = VRRM VR = VRRM; Tj = 100 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C January 1997 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier 12 PBYR2525CT series PBYR1625 PF / W Tmb(max) / C Vo = 0.27 V Rs = 0.00875 Ohms D = 1.0 10 0.1 6 138 0.2 141 4 tp I D= 1000 144 tp T 147 2 t T 0 PBYR1625 Cd / pF 135 0.5 8 10000 132 0 5 10 15 IF(AV) / A 20 150 25 100 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. 50 10 VR / V 100 Fig.4. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. Zth j-mb (K/W) PBYR1625 IF / A 1 10 Tj = 25 C Tj = 125 C 40 1 max typ 30 20 0.1 PD tp 10 t 0 0 0.2 0.4 0.6 0.8 0.01 1 10us VF / V Fig.2. Typical and maximum forward characteristic IF = f(VF); parameter Tj 1A 1ms tp / s 0.1s 10s Fig.5. Transient thermal impedance per diode; Zth j-mb = f(tp). PBYR1625 IR / A 150 C 100mA 125 C 10mA 100 C 1mA 75 C 50 C 100uA Tj = 25 C 10uA 1uA 0 5 10 15 20 25 VR / V Fig.3. Typical reverse leakage current per diode; IR = f(VR); parameter Tj January 1997 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier PBYR2525CT series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.6. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". January 1997 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier PBYR2525CT series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1997 5 Rev 1.000