PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55 1.3 Applications Major application segments: Automotive Telecom infrastructure Industrial Power management: DC-to-DC conversion Supply line switching Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCEO collector-emitter voltage open base IC collector current (DC) ICM peak collector current RCEsat equivalent on-resistance [1] t = 1 ms or limited by Tj(max) IC = 1 A; IB = 100 mA [2] Min Typ Max Unit - - 60 V - - 1 A - - 2 A - 200 250 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, 1 cm2 collector mounting pad. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Discrete pinning Pin Description 1, 2, 5, 6 collector 3 base 4 emitter Simplified outline 6 5 Symbol 1, 2, 5, 6 4 3 4 1 2 3 sym014 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4160V - plastic surface mounted package; 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code PBSS4160V 41 PBSS4160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 2 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 60 V VEBO emitter-base voltage open collector - 5 V - 0.9 A [1] collector current (DC) IC [2] ICM peak collector current t = 1 ms or limited by Tj(max) IB base current (DC) IBM peak base current Ptot total power dissipation Tamb ≤ 25 °C 1 - 2 A - 300 mA - 1 A [1] - 300 mW [2] - 500 mW tp ≤ 300 μs; δ ≤ 0.02 Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. 001aaa714 0.6 Ptot (W) (1) 0.4 (2) 0.2 0 0 40 80 120 160 Tamb (°C) (1) FR4 PCB; 1 cm2 collector mounting pad (2) FR4 PCB; standard footprint Fig 1. Power derating curves PBSS4160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 3 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) Min Typ Max Unit in free air [1] - - 415 K/W [2] - - 250 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. 001aaa715 103 Zth (K/W) (1) (2) (3) (4) (5) 102 (6) (7) (8) (9) 10 (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 PCB; standard footprint (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 2. Transient thermal impedance as a function of pulse time; typical values PBSS4160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 4 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Typ Max Unit collector-base cut-off current VCB = 60 V; IE = 0 A - - 100 nA VCB = 60 V; IE = 0 A; Tj = 150 °C - - 50 μA ICES collector-emitter cut-off current VCE = 60 V; VBE = 0 V - - 100 nA IEBO emitter-base cut-off VEB = 5 V; IC = 0 A current - - 100 nA hFE DC current gain ICBO VCEsat collector-emitter saturation voltage VCE = 5 V; IC = 1 mA 250 400 - VCE = 5 V; IC = 500 mA [1] 200 350 - VCE = 5 V; IC = 1 A [1] 100 150 - - 90 110 mV - 110 140 mV - 200 250 mV - 0.95 1.1 V - 200 250 mΩ IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA [1] VBEsat base-emitter saturation voltage IC = 1 A; IB = 50 mA RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A - 0.82 0.9 V td delay time - 11 - ns tr rise time VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA - 78 - ns ton turn-on time - 90 - ns ts storage time - 340 - ns tf fall time - 160 - ns toff turn-off time - 500 - ns fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 220 - MHz Cc collector capacitance - 5.5 10 pF [1] VCB = 10 V; IE = Ie = 0 A; f = 1 MHz [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. PBSS4160V_3 Product data sheet Min © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 5 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor mle130 800 hFE mle133 1.2 VBE (V) 600 (1) (1) 0.8 (2) (2) (3) 400 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 5 V VCE = 5 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 3. DC current gain as a function of collector current; typical values Fig 4. mle135 1 10 102 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values mle104 1 VCEsat (V) VCEsat (V) 10−1 10−1 (2) (1) 10−2 (3) (1) (3) 10−3 10−1 1 10 102 103 104 IC (mA) 10−2 10−1 1 IC/IB = 10 IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values PBSS4160V_3 Product data sheet 10 (2) © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 6 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor mle129 1 mle134 1.2 VBEsat (V) VCEsat (V) (1) (2) 0.8 (3) (1) 10−1 (2) 10−2 10−1 1 10 102 0.4 0 10−1 103 104 IC (mA) Tamb = 25 °C 1 10 102 103 104 IC (mA) IC/IB = 20 (1) IC/IB = 100 (1) Tamb = −55 °C (2) IC/IB = 50 (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values PBSS4160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 7 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor mle131 2 (6) (5) (4) (3) (2) IC (A) (1) mle132 103 RCEsat (Ω) 1.6 102 (7) (8) 1.2 (9) 10 (10) 0.8 1 0.4 (1) (2) (3) 10−1 0 0 1 2 3 5 4 10−1 1 VCE (V) Tamb = 25 °C 10 102 103 104 IC (mA) IC/IB = 20 (1) IB = 60 mA (1) Tamb = 100 °C (2) IB = 54 mA (2) Tamb = 25 °C (3) IB = 48 mA (3) Tamb = −55 °C (4) IB = 42 mA (5) IB = 36 mA (6) IB = 30 mA (7) IB = 24 mA (8) IB = 18 mA (9) IB = 12 mA (10) IB = 6 mA Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Equivalent on-resistance as a function of collector current; typical values PBSS4160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 8 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 11. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA Fig 12. Test circuit for switching times PBSS4160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 9 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 8. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 SOT666 Fig 13. Package outline SOT666 PBSS4160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 10 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity PBSS4160V SOT666 4 mm pitch, 8 mm tape and reel -115 4000 [1] For further information and the availability of packing methods, see Section 12. PBSS4160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 11 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4160V_3 20091211 Product data sheet - PBSS4160V_2 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • • Table 2 “Discrete pinning”: updated Figure 13 “Package outline SOT666”: updated PBSS4160V_2 20050131 Product data sheet - PBSS4160V_1 PBSS4160V_1 20040423 Objective data sheet - - PBSS4160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 12 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS4160V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 December 2009 13 of 14 PBSS4160V NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 December 2009 Document identifier: PBSS4160V_3