DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D423 BYD12 series Controlled avalanche rectifiers Preliminary specification 1998 Dec 03 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYD12 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD120 package through Implotec(1) technology. This package is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability handbook, k halfpage a • Available in ammo-pack. MGL571 Fig.1 Simplified outline (SOD120) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BYD12D − 200 V BYD12G − 400 V BYD12J − 600 V BYD12K − 800 V BYD12M − 1000 V BYD12D − 200 V BYD12G − 400 V BYD12J − 600 V BYD12K − 800 V − 1000 V continuous reverse voltage BYD12M IF(AV) average forward current Tamb = 25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.6; averaged over any 20 ms period, see Fig.2 − IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = 25 °C prior to surge; VR = VRRMmax − Tstg storage temperature Tj junction temperature 1998 Dec 03 see Fig.3 2 0.82 A 15 A −65 +175 °C −65 +175 °C Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYD12 series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current CONDITIONS MAX. IF = 1 A; see Fig.4 1.05 VR = VRRMmax VR = VRRMmax; Tj = 165 °C; see Fig.5 UNIT V 1 µA 100 µA THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm, pitch 5 mm; see Fig.6. 1998 Dec 03 3 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYD12 series GRAPHICAL DATA MDA808 1 MGC736 200 handbook, halfpage handbook, halfpage IF(AV) Tj (A) 0.8 ( oC) 150 0.6 100 0.4 D G J K M 50 0.2 0 40 0 80 120 0 160 200 Tamb (°C) 0 a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.6. Fig.2 800 1200 VR, VRRM (V) Solid line = VR. Dotted line = VRRM; δ = 0.5. Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.3 MDA817 10 IF 400 Maximum permissible junction temperature as a function of reverse voltage. MDA822 102 handbook, halfpage handbook, halfpage IR (µA) (A) 8 10 6 1 4 10−1 2 10−2 0 0 0.5 1 1.5 VF (V) 2 Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. Fig.4 40 80 120 160 200 Tj (°C) VR = VRRMmax. Fig.5 Forward current as a function of forward voltage; typical values. 1998 Dec 03 0 4 Reverse current as a function of junction temperature; typical values. Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYD12 series 50 handbook, halfpage 5 3 50 2 3 MBK812 Dimensions in mm. Fig.6 Device mounted on a printed-circuit board. 1998 Dec 03 5 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYD12 series PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD120 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b D max. G1 max. L min. mm 0.6 2.15 3.0 28 0 2 4 mm scale Note 1. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-05-25 SOD120 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sa 1998 Dec 03 6 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYD12 series NOTES 1998 Dec 03 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135106/00/01/pp8 Date of release: 1998 Dec 03 Document order number: 9397 750 04768