PHILIPS LTE21009

DISCRETE SEMICONDUCTORS
DATA SHEET
LTE21009R
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21009R
FEATURES
PINNING - SOT440A
• Diffused emitter ballasting resistors
PIN
• Self-aligned process entirely ion implanted and gold
sandwich metallization
• optimum temperature profile
• excellent performance and reliability
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
• Input matching cell improves input impedance and
facilitates the design of wideband circuits.
1
olumns
c
APPLICATIONS
• Common emitter class-A linear power amplifiers up
to 4.2 GHz.
b
3
2
DESCRIPTION
e
MAM131
Top view
NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.
Marking code: 435
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier.
MODE OF OPERATION
Class-A
f
(GHz)
VCE
(V)
IC
(mA)
PL1
(W)
Gpo
(dB)
2.1
16
150
≥0.6
≥10
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21009R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCER
collector-emitter voltage
RBE = 100 Ω
−
35
V
VCEO
collector-emitter voltage
open base
−
16
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
DC collector current (DC)
−
250
mA
Ptot
total power dissipation
−
4
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
Tmb ≤ 75 °C
up to 0.3 mm from case;
t ≤ 10 s
MBH902
103
handbook, halfpage
MGD966
5
Ptot
(W)
handbook, halfpage
IC
(mA)
(3)
4
102
3
(1)
2
(2)
VCEO
10
1
10
15
1
20
25
30
0
−50
35
VCE (V)
0
50
100
150
200
Tmb (°C)
Tmb = 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE < 100 Ω.
(3) Second breakdown limit (independent of temperature).
Fig.3
Fig.2 DC SOAR.
1997 Feb 19
3
Power dissipation derating as a function of
mounting-base temperature.
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21009R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tmb = 25 °C
36
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 1
0.7
K/W
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
VCB = 20 V; IE = 0
−
50
µA
VCB = 40 V; IE = 0
−
0.4
mA
nA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
−
200
hFE
DC current gain
VCE = 5 V; IC = 150 mA
15
150
1997 Feb 19
UNIT
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21009R
PACKAGE OUTLINE
0.1
handbook, full pagewidth
3.45
2.90
1.7 max
4.5
max
3
20.5 max
seating plane
0.25 M
1.0
1
4.5
min
O 0.25 M
3.2
2.9
5.1
3.4
(1)
2
2.0
7.1
14.2
Dimensions in mm.
Torque on screw: Max. 0.4 Nm
Recommended screw: M2.5
Fig.4 SOT440A.
1997 Feb 19
5
MBC888
5.5
max
4.5
min
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21009R
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 19
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21009R
NOTES
1997 Feb 19
7
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp8
Date of release: 1997 Feb 19
Document order number:
9397 750 01718