DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage 16,5 V. BLY87C It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W η % Gp dB zi Ω YL mS c.w. 13,5 175 8 > 12,0 > 60 2,2 + j0,4 96 − j28 c.w. 12,5 175 8 typ. 11,5 typ. 65 − − PIN CONFIGURATION PINNING - SOT120 PIN halfpage 4 1 c 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter handbook, halfpage b MBB012 e 2 MSB056 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor BLY87C RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM max. 36 V Collector-emitter voltage (open base) VCEO max. 18 V Emitter-base voltage (open collector) VEBO max. 4 V Collector current (average) IC(AV) max. 1,5 A Collector current (peak value); f > 1 MHz ICM max. 4,0 A R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Prf max. 20 W Storage temperature Tstg −65 to + 150 °C Operating junction temperature Tj max. MGP820 MGP821 30 2 handbook, halfpage handbook, halfpage IC (A) Prf (W) ΙΙΙ 20 1.5 Th = 70 °C 200 °C Tmb = 25 °C 10 1 ΙΙ derate by 0.12 W/K Ι 0.1 W/K 0 0.5 5 10 15 VCE (V) 0 20 50 Th (°C) 100 I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.2 D.C. SOAR. Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f > 1 MHz. THERMAL RESISTANCE (dissipation = 8 W; Tmb = 73,5 °C, i.e. Th = 70 °C) Rth j-mb(dc) = From junction to mounting base (r.f. dissipation) Rth j-mb(rf) = 8,6 K/W From mounting base to heatsink Rth mb-h = 0,45 K/W From junction to mounting base (d.c. dissipation) August 1986 3 10,7 K/W Philips Semiconductors Product specification VHF power transistor BLY87C CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage V(BR) CES > 36 V V(BR)CEO > 18 V V(BR)EBO > 4 V ICES < 2 mA open base ESBO > 0,5 mJ RBE = 10 Ω ESBR > 0,5 mJ VBE = 0; IC = 5 mA Collector-emitter breakdown voltage open base; IC = 25 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0; VCE = 18 V Second breakdown energy; L = 25 mH; f = 50 Hz D.C. current gain (1) IC = 0,75 A; VCE = 5 V hFE typ. 40 10 to 100 Collector-emitter saturation voltage (1) IC = 2 A; IB = 0,4 A VCEsat typ. 0,85 V −IE = 0,75 A; VCB = 13,5 V fT typ. 950 MHz −IE = 2 A; VCB = 13,5 V fT typ. 850 MHz Cc typ. 16,5 pF Cre typ. 12 pF Ccs typ. 2 pF Transition frequency at f = 100 MHz (1) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 13,5 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 13,5 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. August 1986 4 Philips Semiconductors Product specification VHF power transistor BLY87C MGP822 MGP823 75 30 handbook, halfpage handbook, halfpage hFE Cc (pF) VCE = 13.5 V 50 typ 20 5V 25 10 0 0 0 1 2 IC (A) 3 0 Fig.4 Typical values; Tj = 25 °C. 5 10 VCB (V) 15 Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C. MGP824 1000 handbook, full pagewidth VCB = 13.5 V fT (MHz) 10 V 500 0 0 1 2 Fig.6 Typical values; f = 100 MHz; Tj = 25 °C. August 1986 5 −IE (A) 3 Philips Semiconductors Product specification VHF power transistor BLY87C APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th = 25 °C f (MHz) VCE (V) PL (W) PS (W) 175 13,5 8 < 0,5 175 12,5 8 − Gp (dB) IC (A) 12,0 < 0,99 > − typ. 11,5 handbook, full pagewidth η (%) 60 2,2 + j0,4 96 − j28 typ. 65 − − 50 Ω L7 C6 50 Ω T.U.T. L3 L1 YL (mS) > L4 C1 zi (Ω) C7 L5 C2 L2 C3 C4 C5 R1 L6 +VCC MGP253 Fig.7 Test circuit; c.w. class-B. List of components: C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3 = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor (500 V) C5 = 100 nF polyester capacitor C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) L1 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2 × 5 mm L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = L4 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor L5 = 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2 × 5 mm L7 = 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2 × 5 mm L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 10 Ω carbon resistor Component layout and printed-circuit board for 175 MHz test circuit see Fig.8. August 1986 6 Philips Semiconductors Product specification VHF power transistor BLY87C 150 handbook, full pagewidth 72 1888MJK L6 +VCC C4 C5 R1 L5 C1 C2 L1 C6 L4 L3 C7 L7 L2 C3 1888MJK rivet MGP825 Fig.8 Component layout and printed-circuit board for 175 MHz test circuit. The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. August 1986 7 Philips Semiconductors Product specification VHF power transistor BLY87C MGP826 MGP827 30 15 handbook, halfpage handbook, halfpage PL (W) Gp (dB) Th = 25 °C η (%) Th = 25 °C η 60 20 10 80 70 °C Th = 25 °C Th = 70 °C 40 10 5 70 °C 0 2.5 0 0 Fig.9 0.5 1 PS (W) 1.5 Typical values; f = 175 MHz; VCE = 13,5 V; − − − VCE = 12,5 V. 4.5 6.5 8.5 Gp 20 10.5 12.5 PL (W) Fig.10 Typical values; f = 175 MHz; VCE = 13,5 V; − − − VCE = 12,5 V. Note to Fig.11: The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. MGP828 10 handbook, halfpage PLnom (W) VSWR = 1 VSWR = 6 9 The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio. 10 8 20 50 PS PSnom 7 1 1.1 1.2 VCE VCEnom 1.3 Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th = 70 °C; Rth mb-h = 0,45 K/W; VCEnom = 13,5 V or 12,5 V; PS = PSnom at VCEnom and VSWR = 1. August 1986 8 Philips Semiconductors Product specification VHF power transistor BLY87C MGP829 10 MGP830 15 handbook, halfpage handbook, halfpage ri, xi (Ω) RL (Ω) 5 RL RL 0 CL (pF) −50 10 xi ri CL ri CL 0 −100 5 xi −5 0 0 200 f (MHz) 400 0 Typical values; VCE = 13,5 V; PL = 8 W; Th = 25 °C. 200 f (MHz) −150 400 Typical values; VCE = 13,5 V; PL = 8 W; Th = 25 °C. Fig.12 Input impedance (series components). Fig.13 Load impedance (parallel components). OPERATING NOTE Below 100 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. MGP831 20 handbook, halfpage Gp (dB) 15 10 0 0 200 f (MHz) 400 Typical values; VCE = 13,5 V; PL = 8 W; Th = 25 °C. Fig.14 August 1986 9 Philips Semiconductors Product specification VHF power transistor BLY87C PACKAGE OUTLINE Studded ceramic package; 4 leads SOT120A D A Q c A D1 N1 w1 M A D2 N M W N3 M1 X H detail X b 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M M1 N N1 N3 Q mm 5.97 4.74 5.90 5.48 0.18 0.14 9.73 9.47 8.39 8.12 9.66 9.39 27.44 25.78 9.00 8.00 3.41 2.92 1.66 1.39 12.83 11.17 1.60 0.00 3.31 2.54 4.35 3.98 0.065 0.505 0.063 0.055 0.440 0.000 0.130 0.100 0.171 0.157 inches 0.283 0.248 OUTLINE VERSION 0.232 0.007 0.216 0.004 0.383 0.330 0.380 1.080 0.373 0.320 0.370 1.015 0.354 0.134 0.315 0.115 REFERENCES IEC JEDEC EIAJ w1 0.38 8-32 UNC EUROPEAN PROJECTION 0.015 ISSUE DATE 97-06-28 SOT120A August 1986 W 10 Philips Semiconductors Product specification VHF power transistor BLY87C DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11