DISCRETE SEMICONDUCTORS DATA SHEET KM110B/2 Magnetic field sensor Preliminary specification File under Discrete Semiconductors, SC17 Philips Semiconductors November 1994 Philips Semiconductors Preliminary specification Magnetic field sensor KM110B/2 DESCRIPTION The KM110B/2 is a sensitive magnetic field sensor, employing the magnetoresistive effect in thin-film permalloy. A Ferroxdure FXD100 magnet mounted on the back of the sensor package provides an auxiliary field of 3.6 kA/m in the x-direction of the sensor. y Typical applications for the KM110B/2 are current measurement, linear position measurement, rotational speed detection of magnetic pole wheels as well as magnetic field measurement. The sensor can be operated at any frequency between DC and 1 MHz. x MLB874 1 2 3 4 PINNING PIN SYMBOL DESCRIPTION 1 +VO output voltage 2 GND ground 3 −VO output voltage 4 +VCC supply voltage Marking: KMZ10B PHDxx. Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC DC supply voltage − 5 − V Tbridge bridge operating temperature −40 − 150 °C Hy magnetic field strength −2.2 − +2.2 kA/m S sensitivity − 3.6 − mV ⁄ V ----------------kA ⁄ m Rbridge bridge resistance 1.6 2.1 2.6 kΩ Voffset offset voltage −0.5 − +0.5 mV/V CIRCUIT DIAGRAM MLB875 handbook, full pagewidth 4 3 2 1 VCC –VO GND +VO Fig.2 Simplified circuit diagram. November 1994 2 Philips Semiconductors Preliminary specification Magnetic field sensor KM110B/2 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC DC supply voltage − 12 V Ptot total power dissipation up to Tamb = 130 °C; see Fig.5 − 120 mW Tstg storage temperature note 1 −40 +150 °C Tbridge bridge operating temperature −40 +150 °C Note 1. Maximum operating temperature of the thin-film permalloy. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE thermal resistance from junction to ambient 180 UNIT K/W CHARACTERISTICS Tamb = 25 °C; VCC = 5 V unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Hy magnetic field strength note 1 −2.2 − +2.2 kA/m S sensitivity open circuit; notes 2 and 3 2.9 3.6. 4.4 mV ⁄ V ----------------kA ⁄ m TCVO temperature coefficient of output voltage VCC = −5 V; Tamb = −25 to +125 °C − −0.4 − %/K ICC = 3 mA; Tamb = −25 to +125 °C − −0.1 − %/K 1.6 − 2.6 kΩ Tbridge = −25 to +125 °C − 0.3 − %/K Rbridge bridge resistance TCRbridge temperature coefficient of bridge resistance Voffset offset voltage −0.5 − +0.5 mV/V TCVoffset temperature coefficient of offset voltage Tbridge = −25 to +125 °C −5 ±1.5 5 (µV/V)/K FL linearity deviation of output voltage Hy = 0 to ±1 kA/m − − 0.5 %⋅FS Hy = 0 to ±1.6 kA/m − − 1.7 %⋅FS Hy = 0 to ±2 kA/m − − 2.0 %⋅FS − − 0.5 %⋅FS 0 − 1 MHz FH hysteresis of output voltage f operating frequency November 1994 note 4 3 Philips Semiconductors Preliminary specification Magnetic field sensor KM110B/2 Notes to the characteristics 1. Magnet (Ferroxdure 100) delivers an auxiliary field of Hx = 3.6 kA/m (temperature coefficient: −0.2 %/K). Above 110 °C the auxiliary field Hx will be <3.0 kA/m; stable sensor operation may be threatened by disturbing magnetic fields. 2. handbook, halfpage S Hy M N S Hx ( V O at H y = 1.6 kA/m ) – ( V O at H y = 0 ) S = ----------------------------------------------------------------------------------------------------------------. 1.6 × V CC 3. The sensitivity increases and decreases linear with the supply voltage, thus the static output voltage is directly proportional to the supply voltage. 4. Sensor bridge response only. When sensing high speed rotation, the operating frequency may be reduced due to eddy current effects. 4 3 2 1 MBD882 M = direction of magnetization. N, S = magnetic poles. Fig.3 Principle of magnetization. MBD885 8 MBD892 125 handbook, halfpage handbook, halfpage Ptot (mW) 100 VO (mV/V) 4 75 0 50 –4 25 0 –8 –2 –1 0 1 0 2 H y (kA/m) 50 100 150 200 T amb (o C) Tamb = 25 °C; Voffset = 0. Fig.4 Sensor output characteristic. November 1994 Fig.5 Power derating curve. 4 Philips Semiconductors Preliminary specification Magnetic field sensor KM110B/2 PACKAGE OUTLINE 4.8 max 0.35 handbook, full pagewidth 0.75 1.8 max 4.6 4.4 0.66 0.56 0.65 0.55 1.15 (2) chip 2.35 2.25 5.2 max 2.0 (1) max 12.7 max 1 1.25 (3x) 2 3 4 0.48 0.40 Dimensions in mm. (1) Terminal dimensions uncontrolled within this area. (2) Position of sensor chip. Fig.6 Outline of KM110B/2. November 1994 5 MBD881 0.4 min Philips Semiconductors Preliminary specification Magnetic field sensor KM110B/2 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1994 6