Philips Semiconductors Advanced BiCMOS Products Product specification Data 10-bit bus transceiver (3-State) MB2861 • Live insertion/extraction permitted • Latch-up protection exceeds 500mA per buffering for wide data/address paths or buses carrying parity DESCRIPTION The MB2861 bus transceiver provides high performance bus interface buffering for wide data/address paths of buses carrying parity. • Buffered control inputs for light loading, or Jedec JC40.2 Std 17 increased fan-in as required with MOS microprocessors The MB2861 10-bit bus transceiver has NOR-ed transmit and receive output enables for maximum control flexibility. • ESD protection exceeds 2000 V per MIL • Output capability: +64mA/-32mA • Power-up 3-State FEATURES STD 883 Method 3015 and 200 V per Machine Model • Provides high performance bus interface QUICK REFERENCE DATA SYMBOL CONDITIONS Tamb = 25°C; GND = 0V PARAMETER TYPICAL UNIT 3.4 ns tPLH tPHL Propagation delay nAx to nBx or nBx to nAx CL = 50pF; VCC = 5V CIN Input capacitance VI = 0V or VCC 4 pF CI/O I/O capacitance VO = 0V or VCC; 3-State 7 pF ICCZ Total supply current Outputs disabled; VCC =5.5V 500 nA ORDERING INFORMATION PACKAGES TEMPERATURE RANGE ORDER CODE DRAWING NUMBER 52-Pin Plastic Quad Flat Pack –40°C to +85°C MB2861BB 1418B 52 51 50 49 48 47 46 45 44 43 42 Vcc 1A3 1A2 GND 1A1 1A0 1OEBA LOGIC SYMBOL 1OEAB 1B0 1B1 1B2 1B3 Vcc PIN CONFIGURATION 45 44 42 41 39 38 37 36 35 34 41 40 1A0 1A1 1A2 1A3 1A4 1A5 1A6 1A7 1A8 1A9 1B4 1 39 1A4 1B5 2 38 1A5 46 1OEBA 1B6 3 37 1A6 47 1OEAB GND 4 36 1A7 1B7 5 35 1A8 1B8 6 1B9 7 2B0 8 2B1 9 MB2861 52-Pin Plastic Quad Flat Pack 1B0 1B1 1B2 1B3 1B4 1B5 1B6 1B7 1B8 1B9 34 1A9 48 49 50 51 1 2 3 5 6 7 33 2A0 33 32 31 29 28 27 25 24 23 22 32 2A1 31 2A2 2B2 10 2A0 2A1 2A2 2A3 2A4 2A5 2A6 2A7 2A8 2A9 30 GND 2B3 11 29 2A3 21 2B4 12 28 2A4 20 2B5 13 27 2A5 2OEAB 2B0 2B1 2B2 2B3 2B4 2B5 2B6 2B7 2B8 2B9 26 8 Vcc 2A6 2A7 2A8 2A9 21 22 23 24 25 2OEBA 2OEAB 2B9 2B8 17 18 19 20 GND 2B7 Vcc August 27, 1993 2B6 14 15 16 2OEBA 1 9 10 11 12 13 15 16 18 19 853-1715 10661 Philips Semiconductors Advanced BiCMOS Products Product specification Data 10-bit bus transceiver (3-State) MB2861 PIN DESCRIPTION PIN NUMBER SYMBOL FUNCTION 47, 20 1OEAB, 2OEAB A side to B side output enable inputs (active-Low) 45, 44, 42, 41, 39, 38, 37, 36, 35, 34 33, 32, 31, 29, 28, 27, 25, 24, 23, 22 1A0-1A9, 2A02nA9 Data inputs/outputs (A side) 48, 49, 50, 51, 1, 2, 3, 5, 6, 7 8, 9, 10, 11, 12, 13, 15, 16, 18, 19 1B0-1B9, 2B02nB9 Data outputs/outputs (B side) 46, 21 1OEBA, 2OEBA B side to A side output enable inputs (active-Low) 4, 17, 30, 43 GND Ground (0V) 14, 26, 40, 52 VCC Positive supply voltage LOGIC SYMBOL (IEEE/IEC) 46 47 21 EN1(BA) 20 EN2(AB) 45 EN1(BA) EN2(AB) 48 33 44 49 32 9 42 50 31 10 41 51 29 11 39 1 28 12 38 2 27 13 37 3 25 15 36 5 24 16 35 6 23 18 34 7 22 19 1 2 FUNCTION TABLE INPUTS 8 1 2 LOGIC DIAGRAM OPERATING nOEAB nOEAB nOEBA L H A data to B bus H L B data to A bus H H Z H L X Z = = = = MODE High voltage level Low voltage level Don’t care High impedance “off” state August 27, 1993 10 nAx 10 nBx nOEBA 2 Philips Semiconductors Advanced BiCMOS Products Product specification Data 10-bit bus transceiver (3-State) MB2861 ABSOLUTE MAXIMUM RATINGS1, 2 SYMBOL VCC IIK PARAMETER CONDITIONS RATING UNIT –0.5 to +7.0 V –18 mA –1.2 to +7.0 V VO < 0 –50 mA output in Off or High state –0.5 to +5.5 V output in Low state 128 mA –65 to 150 °C DC supply voltage DC input diode current VI < 0 voltage3 VI DC input IOK DC output diode current voltage3 VOUT DC output IOUT DC output current Tstg Storage temperature range NOTES: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C. 3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. RECOMMENDED OPERATING CONDITIONS SYMBOL VCC PARAMETER LIMITS DC supply voltage UNIT Min Max 4.5 5.5 V 0 VCC V VI Input voltage VIH High-level input voltage VIL Low-level Input voltage 0.8 V IOH High-level output current –32 mA IOL Low-level output current 64 mA 0 10 ns/V –40 +85 °C ∆t/∆v Input transition rise or fall rate Tamb Operating free-air temperature range August 27, 1993 2.0 3 V Philips Semiconductors Advanced BiCMOS Products Product specification Data 10-bit bus transceiver (3-State) MB2861 DC ELECTRICAL CHARACTERISTICS LIMITS SYMBOL PARAMETER TEST CONDITIONS Min VIK VOH VOL II Input clamp voltage High-level output voltage Tamb = –40°C to +85°C Tamb = +25°C VCC = 4.5V; IIK = –18mA Typ Max –0.9 –1.2 Min UNIT Max –1.2 V VCC = 4.5V; IOH = –3mA; VI = VIL or VIH 2.5 2.9 2.5 V VCC = 5.0V; IOH = –3mA; VI = VIL or VIH 3.0 3.4 3.0 V VCC = 4.5V; IOH = –32mA; VI = VIL or VIH 2.0 2.4 2.0 V Low-level output voltage VCC = 4.5V; IOL = 64mA; VI = VIL or VIH 0.42 0.55 0.55 V Input leakage Control pins VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA current Data pins VCC = 5.5V; VI = GND or 5.5V ±5 ±100 ±100 µA Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA Power-up/down 3-State output current3 VCC = 2.1V; VO = 0.5V; VI = GND or VCC; VOE = Don’t care ±5.0 ±50 ±50 µA IIH + IOZH 3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or VIH 5.0 50 50 µA IIL + IOZL 3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or VIH –5.0 –50 –50 µA Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or VCC 5.0 50 50 µA –80 –180 –180 mA VCC = 5.5V; Outputs High, VI = GND or VCC 65 250 250 µA VCC = 5.5V; Outputs Low, VI = GND or VCC 45 72 72 mA VCC = 5.5V; Outputs 3-State; VI = GND or VCC 65 250 250 µA VCC = 5.5V; one input at 3.4V, other inputs at VCC or GND 0.5 1.5 1.5 mA IOFF IPD/PD ICEX IO Output current1 ICCH ICCL Quiescent supply current ICCZ ∆ICC Additional supply current per input pin2 VCC = 5.5V; VO = 2.5V –50 –50 NOTES: 1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second. 2. This is the increase in supply current for each input at 3.4V. 3. This parameter is valid for any VCC between 0V and 2.1V with a transition time of up to 10msec. From VCC = 2.1 to VCC = 5V ± 10% a transition time of up to 100µsec is permitted. AC CHARACTERISTICS GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω LIMITS SYMBOL PARAMETER Tamb = -40 to +85oC VCC = +5.0V ±0.5V Tamb = +25oC VCC = +5.0V WAVEFORM Min Typ Max Min Max UNIT tPLH tPHL Propagation delay nAx to nBx or nBx to nAx 1 1.4 1.5 2.9 2.9 4.1 4.1 1.4 1.5 4.6 4.6 ns tPZH tPZL Output enable time to High and Low level 2 1.5 2.0 3.0 3.6 3.9 4.8 1.5 2.0 4.6 5.3 ns tPHZ tPLZ Output disable time from High and Low level 2 1.2 1.7 3.6 3.1 4.8 4.3 1.2 1.7 5.3 4.8 ns August 27, 1993 4 Philips Semiconductors Advanced BiCMOS Products Product specification Data 10-bit bus transceiver (3-State) MB2861 AC WAVEFORMS VM = 1.5V, VIN = GND to 3.0V nOEXX INPUT INPUT VM VM VM tPLZ tPZL VM OUTPUT tPLH VM tPHL VOL + 0.3V VOL tPHZ tPZH VM VM OUTPUT 3.5V VOH VOH – 0.3V OUTPUT VM 0V Waveform 1. Input to Output Propagation Delays Waveform 2. 3-State Output Enable and Disable Times TEST CIRCUIT AND WAVEFORM VCC 7.0V VIN VOUT PULSE GENERATOR tW 90% VM NEGATIVE PULSE CL 10% 0V RL tTHL (tF) tTLH (tR) tTLH (tR) tTHL (tF) 90% POSITIVE PULSE Test Circuit for 3-State Outputs AMP (V) 90% VM VM 10% 10% tW SWITCH POSITION TEST SWITCH tPLZ closed tPZL closed All other open 0V VM = 1.5V Input Pulse Definition INPUT PULSE REQUIREMENTS FAMILY Amplitude Rep. Rate tW tR tF 3.0V 1MHz 500ns 2.5ns 2.5ns DEFINITIONS MB RL = Load resistor; see AC CHARACTERISTICS for value. CL = Load capacitance includes jig and probe capacitance; see AC CHARACTERISTICS for value. RT = Termination resistance should be equal to ZOUT of pulse generators. August 27, 1993 AMP (V) VM 10% RL D.U.T RT 90% 5