BCR15PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) 2 3 1 VPS05604 Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device B2 E2 6 5 4 R2 R1 W1s 123 C1 TR2 TR1 Position in tape: pin 1 opposite of feed hole side Direction of Unreeling EHA07193 R1 R2 1 2 3 E1 B1 C2 EHA07176 Type Marking BCR15PN WAs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 15 DC collector current IC 100 mA Total power dissipation , TS = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature T stg V -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS ≤ 140 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Apr-30-2004 BCR15PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - I CBO - - 100 nA I EBO - - 1.61 mA h FE 20 - - - - - 0.3 V Vi(off) 0.8 - 1.5 Vi(on) 1 - 2.5 DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V VCEsat Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 3.2 4.7 6.2 kΩ Resistor ratio R1/R 2 0.9 1 1.1 - fT - 140 - MHz Ccb - 3 - pF AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% 2 Apr-30-2004 BCR15PN NPN Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 3 10 2 - mA IC hFE 10 2 10 1 10 1 10 0 10 -1 -1 10 10 0 10 1 10 2 mA 10 10 0 0 3 0.1 0.2 V 0.3 IC 0.5 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC ) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 3 10 1 mA mA 10 2 IC IC 10 0 10 1 10 -1 10 -2 10 0 10 -1 0 10 10 1 V 10 2 Vi(on) 1 1.2 1.4 1.6 V 2 Vi(off) 3 Apr-30-2004 BCR15PN PNP Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 3 10 2 - mA IC hFE 10 2 10 1 10 1 10 0 10 -1 -1 10 10 0 10 1 mA 10 10 0 0 2 0.2 0.4 0.6 0.8 IC V 1.1 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 2 10 1 mA mA 10 0 IC IC 10 1 10 0 10 -1 -1 10 10 0 10 1 V 10 2 Vi(on) 10 -1 10 -2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 2 Vi(off) 4 Apr-30-2004 BCR15PN Total power dissipation P tot = f (TS) 300 Ptot mW 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Apr-30-2004 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.