Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Bipolar IC Features • • • • • • Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields Large temperature range Protection against reversed polarity Output protection against electrical disturbances P-SSO-3-2 Type Ordering Code Package TLE 4905 L Q67006-A9120 P-SSO-3-2 TLE 4935 L Q67006-A9112 P-SSO-3-2 TLE 4935-2 L Q67006-A9143 P-SSO-3-2 TLE 4945 L Q67006-A9163 P-SSO-3-2 TLE 4945-2L on request P-SSO-3-2 TLE 4905/35/35-2/45 L (Unipolar/Bipolar Magnetic Field Switches) have been designed specifically for automotive and industrial applications. Reverse polarity protection is included on-chip as is output protection against negative voltage transients. Typical applications are position/proximity indicators, brushless DC motor commutation, rotational indexing etc. Semiconductor Group 1 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Pin Configuration (view on branded side of component) Center of sensitive area 1.35 ±0.15 2.08 ±0.15 1 VS 2 3 GND Q AEP01364 Figure 1 Pin Definitions and Functions Pin No. Symbol Function 1 VS Supply voltage 2 GND Ground 3 Q Output Semiconductor Group 2 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Circuit Description The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The internal reference provides the supply voltage for the components. A magnetic field perpendicular to the chip surface induces a voltage at the hall probe. This voltage is amplified and switches a Schmitt-trigger with open-collector output. A protection diode against reverse power supply is integrated. The output is protected against electrical disturbances. Threshold Generator VS 1 3 Q HallGenerator VS VRef Amplifier SchmittTrigger Output Stage 2 AEB01243 GND Figure 2 Block Diagram Semiconductor Group 3 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Functional Description Unipolar Type TLE 4905 (figure 3 and 4) When a positive magnetic field is applied in the indicated direction (figure 3) and the turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). When the current is reduced, the output of the IC turns off (Release Point; figure 4). + Branded Side Ι S VQ N + VS - AES01231 Figure 3 Sensor/Magnetic-Field Configuration B BOP Induction BRP 0 t VQ VQH Output Voltage VQL t AED01420 Figure 4 Switching Characteristics Unipolar Type Semiconductor Group 4 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Functional Description Bipolar Type TLE 4935/35-2/45 (figure 5 and 6) When a positive magnetic field is applied in the indicated direction (figure 5) and the turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). When a reverse magnetic field is generated, the output of the IC turns off (Release Point; figure 6). + Branded Side Ι S VQ N + VS - AES01231 Figure 5 Sensor/Magnetic-Field Configuration B BOP 0 t Induction BRP VQ VQH Output Voltage VQL t AED01421 Figure 6 Switching Characteristics Bipolar Type Semiconductor Group 5 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Absolute Maximum Ratings Tj = – 40 to 150 ˚C Parameter Supply voltage Supply voltage Output voltage Output current Output reverse current Junction temperature Junction temperature Junction temperature Storage temperature Thermal resistance Symbol VS VS VQ IQ – IQ Tj Tj Tj Tstg Rth JA Limit Values Unit Remarks min. max. – 40 32 V – – 40 V t < 400 ms; ν = 0.1 – 32 V – – 100 mA – – 100 mA – – 40 150 ˚C – – 170 ˚C 1000 h – 210 ˚C 40 h – 50 150 ˚C – – 190 K/W – Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Operating Range Parameter Supply voltage Junction temperature Junction temperature Symbol VS Tj Tj Limit Values Unit Remarks min. max. 3.8 24 V – – 40 150 ˚C – – 40 170 ˚C thresholds may exceed the limits Note: In the operating range the functions given in the circuit description are fulfilled. Semiconductor Group 6 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L AC/DC Characteristics 3.8 V ≤ VS ≤ 24 V; – 40 ˚C ≤ Tj ≤ 150 ˚C Parameter Symbol ISHigh ISLow Output saturation VQSat Supply current Limit Values Unit Test Condition Test Circuit min. typ. max. – – 3 4 7 8 mA mA B < BRP B > BOP 1 1 – 0.25 0.5 V IQ = 40 mA 1 voltage Output leakage current IQL – – 10 µA VQ = 24 V 1 Rise/fall time tr / tf – – 1 µs RL = 1.2 kΩ CL ≤ 33 pF 1 Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and the given supply voltage. Semiconductor Group 7 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Magnetic Characteristics 3.8 V ≤ VS ≤ 24 V Parameter Symbol Limit Values TLE 4905 unipolar TLE 4935 bipolar latch TLE 4935-2 bipolar latch Unit TLE 4945 bipolar latch TLE 4945-2 bipolar latch min. max. min. max. min. max. min. max. min. max. Junction Temperature Tj = – 40 ˚C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP 7.5 19 10 20 15 27 –6 BRP 5.5 17 – 20 – 10 – 27 – 15 ∆BHY 2 6.5 20 40 30 10 –3 6 mT – 10 6 –6 3 mT 54 2 10 1 5 mT 10 –3 6 mT Junction Temperature Tj = 25 ˚C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP 7 18 10 18 14 26 –6 BRP 5 16 –18 –10 – 26 – 14 – 10 6 –6 3 mT ∆BHY 2 6 20 36 28 52 2 10 1 5 mT 10 –3 6 mT Junction Temperature Tj = 85 ˚C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP 6.5 17.5 9 18 13 26 –6 BRP 4.5 15 – 18 –9 – 26 – 13 – 10 6 –6 3 mT ∆BHY 2 5.5 18 36 26 52 2 1 5 mT Semiconductor Group 8 10 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Magnetic Characteristics (cont’d) 3.8 V ≤ VS ≤ 24 V Parameter Symbol Limit Values TLE 4905 unipolar TLE 4935 bipolar latch TLE 4935-2 bipolar latch Unit TLE 4945 bipolar latch TLE 4945-2 bipolar latch min. max. min. max. min. max. min. max. min. max. Junction Temperature Tj = 150 ˚C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP 6 17 7 18 12 25 –6 BRP 4 14 – 18 –7 – 25 – 12 ∆BHY 2 5 14 36 24 50 10 –3 6 mT – 10 6 –6 3 mT 2 1 5 mT 10 Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and the given supply voltage. Semiconductor Group 9 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L VS ΙS 1 + VS 4.7 nF - 2 RL GND TLE 4905/35/35-2/45-2 CL 3 ΙQ Q AES01244 Unipolar Type TLE 4905 Bipolar Type TLE 4935 VQ VQ VQH VQH VQL VQL 0 B OP B RP B B RP B HY 0 B HY B OP B AED01422 VQ VQH 0.9 VQH 0.1VQH t tr tf AED01246 Figure 7 Test Circuit 1 Semiconductor Group 10 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Mainframe Line Sensor 1 VS VS 4.7 nF 2 1.2 k Ω GND TLE 4905/35/35-2/45-2 4.7 nF 3 Signal Q AES01247 Figure 8 Application Circuit Semiconductor Group 11 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Quiescent Current versus Supply Voltage ΙS Quiescent Current versus Junction Temperature AED01248 8 ΙS mA AED01249 8 mA VQ = High VQ = High 6 6 T j = -40 ˚C 4 4 VS = 24 V T j = 150 ˚C 2 VS = 3.8 V 2 0 5 0 10 15 0 -50 25 V 0 50 100 Tj Quiescent Current Difference versus Temperature Saturation Voltage versus Output Current AED01459 1.0 AED01461 1.2 ∆Ι S VQ mA V 3.8 V <_ VS <_ 24 V 1.0 ∆ Ι S = Ι SLow - Ι SHigh 0.75 200 C VS Ι Q = 40 mA 0.8 0.6 0.5 T j = 150 ˚C 0.4 0.25 T j = -40 ˚C 0.2 0 -40 0 50 100 0 150 ˚C 200 20 40 60 mA 100 ΙQ Tj Semiconductor Group 0 12 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L TLE 4905 Hysteresis versus Junction Temperature TLE 4905 Operate-and Release-Point versus Junction Temperature AED01424 25 B B 3.8 V <_ VS <_ 24 V mT AED01426 8 3.8 V <_ VS <_ 24 V mT 20 6 B OPmax B HYmax 15 B RPmax 4 B OPtyp 10 B HYtyp B RPtyp 2 B OPmin 5 B HYmin B RPmin 0 -40 0 50 100 0 -40 200 ˚C 0 50 100 Tj Tj TLE 4935-2 Operate-and Release-Point versus Junction Temperature TLE 4935 Operate-and Release-Point versus Junction Temperature AED01423 30 B AED01640 30 3.8 V <_ VS <_ 24 V mT B 3.8 V <_ VS <_ 24 V mT B OPmax 20 20 B OPtyp B OPmax B OPmin 10 B OPtyp 10 200 ˚C B OPmin 0 0 -10 B RPmax B RPmax -10 B RPtyp -20 B RPtyp B RPmin B RPmin -20 -40 0 50 100 -30 -40 200 ˚C 50 100 ˚C 200 Tj Tj Semiconductor Group 0 13 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L TLE 4945 Operate-and Release-Point versus Junction Temperature AED01425 30 B TLE 4945-2 Operate-and Release-Point versus Junction Temperature 3.8 V <_ VS <_ 24 V mT AED02353 18 B 3.8 V <_ VS <_ 24 V mT 12 20 B OPmax 10 B OPmax 6 B RPmax B OPtyp 0 B RPmax B OPtyp 0 B RPtyp B RPtyp B OPmin B OPmin -10 -6 B RPmin -12 -20 -30 -40 B RPmin 0 50 100 ˚C -18 -40 200 50 100 ˚C 200 Tj Tj Semiconductor Group 0 14 1997-09-01 TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Package Outline GPO05358 P-SSO-3-2 (Plastic Single Small Outline Package) Exterior Packaging I.e. tubes, trays, boxes are shown in our Data Book “Package Information”. Semiconductor Group 15 Dimensions in mm 1997-09-01