SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary · P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current • dv/dt rated · dv/dt rated • 175°C operating temperature operating temperature · 175°C • Pb-free lead plating; RoHs compliant • Qualified according to AEC Q101 Type Package SPP80P06P G PG-TO220-3 Yes SPB80P06P G PG-TO263-3 Lead free VDS RDS(on) ID -60 V 0.023 W -80 A Pin 1 PIN 2/4 PIN 3 G D S Yes Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Value ID Continuous drain current Unit A T C = 25 °C, 1) -80 T C = 100 °C -64 ID puls -320 EAS 823 EAR 34 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 340 W -55...+175 °C Pulsed drain current T C = 25 °C Avalanche energy, single pulse I D = -80 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt mJ kV/µs I S = -80 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C T C = 25 °C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 55/175/56 1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry I = -91A D Rev 1.4 Page 1 2009-11-19 SPP80P06P G SPB80P06P G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.4 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - - 40 K/W Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -5.5 mA VGS(th) -2.1 -3 -4 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 150 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 0.021 0.023 W Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -10 V, I D = -64 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.4 Page 2 2009-11-19 SPP80P06P G SPB80P06P G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs 18 36 - S Input capacitance Ciss - 4026 5033 pF Coss - 1252 1565 Crss - 437 546 t d(on) - 24 36 tr - 18 27 t d(off) - 56 84 tf - 30 45 VDS³2*I D*RDS(on)max , ID = -64 A VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Rise time VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Turn-off delay time VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Fall time VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Rev 1.4 Page 3 2009-11-19 SPP80P06P G SPB80P06P G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Q gs - 27.4 41 Q gd - 50 75 Qg - 115 173 V(plateau) - -6.2 - Dynamic Characteristics Gate to source charge nC VDD = -48 V, ID = -80 A Gate to drain charge VDD = -48 V, ID = -80 A Gate charge total VDD = -48 V, ID = -80 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -80 A Parameter Symbol Values Unit min. typ. max. IS - - -80 ISM - - -320 VSD - -1.2 -1.6 V trr - 117 175 ns Qrr - 420 630 nC Reverse Diode Inverse diode continuous forward current A T C = 25 °C Inverse diode direct current,pulsed T C = 25 °C Inverse diode forward voltage VGS = 0 V, I F = -80 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Rev 1.4 Page 4 2009-11-19 SPP80P06P G SPB80P06P G Power dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ³ 10 V SPP80P06P SPP80P06P -90 360 A 280 -70 240 -60 ID Ptot W 200 -50 160 -40 120 -30 80 -20 40 -10 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , T C = 25 °C parameter : D = tp /T -10 3 SPP80P06P 10 1 SPP80P06P K/W tp = 14.0µs -10 2 10 0 Z thJC A V DS /I D ID 100 µs 10 -2 1 ms = 10 -1 DS ( on ) D = 0.50 R -10 0.20 10 ms 1 10 -3 0.10 0.05 DC 0.02 single pulse 10 -4 -10 0 -1 -10 -10 0 -10 1 V -10 2 VDS Rev 1.4 10 -5 -7 10 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 5 2009-11-19 SPP80P06P G SPB80P06P G Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs RDS(on) = f (ID ) parameter: VGS SPP80P06P -190 SPP80P06P Ptot = 340.00W 0.075 W A j VGS [V] a -160 ID -140 i -120 h -100 g -80 -60 b c d e f g h i -4.0 b -4.5 c -5.0 d -5.5 e -6.0 f -6.5 g -7.0 h -7.5 i -8.0 0.060 RDS(on) k 0.055 0.050 0.045 0.040 0.035 f j -9.0 0.030 k -10.0 0.025 e 0.020 -40 d 0.015 0.010 VGS [V] = c -20 0.005 b 0 0 a -1 -2 -3 -4 -5 -6 -7 -8 V 0.000 0 -10 b c d e f -4.5 -5.0 -5.5 -6.0 -6.5 -20 -40 -60 g h i j k -7.0 -7.5 -8.0 -9.0 -10.0 -80 -100 -120 j k A VDS -160 ID Typ. transfer characteristics I D= f ( V GS ) VDS³ 2 x I D x RDS(on)max Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 50 -80 S A 40 -60 gfs ID 35 -50 30 25 -40 20 -30 15 -20 10 -10 0 0 5 -1 Rev 1.4 -2 -3 -4 -5 -6 -7 -8 V -10 VGS Page 6 0 0 -10 -20 -30 -40 -50 -60 -70 -80 A -100 ID 2009-11-19 SPP80P06P G SPB80P06P G Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = -64 A, VGS = -10 V parameter: VGS = VDS , ID = -5.5 mA SPP80P06P -5.0 0.070 W V 0.060 98% -4.0 V GS(th) RDS(on) 0.055 0.050 0.045 -3.5 typ -3.0 0.040 -2.5 0.035 98% typ 0.030 2% -2.0 0.025 0.020 -1.5 0.015 -1.0 0.010 -0.5 0.005 0.000 -60 -20 20 60 100 140 °C 0.0 -60 200 -20 20 60 100 140 Tj °C 200 Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 5 10 3 pF SPP80P06P A 10 2 C IF 10 4 Ciss Coss 10 3 10 1 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 -5 -10 -15 V -25 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Rev 1.4 10 0 0.0 Page 7 2009-11-19 SPP80P06P G SPB80P06P G Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -80 A pulsed para.: I D = -80 A , VDD = -25 V, RGS = 25 W SPP80P06P 850 -16 mJ V 700 -12 VGS E AS 600 500 -10 0,2 VDS max 0,8 VDS max -8 400 -6 300 200 -4 100 -2 0 25 45 65 85 105 125 145 0 0 °C 185 Tj 20 40 60 80 100 120 140 nC 180 QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP80P06P -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 140 °C 200 Tj Rev 1.4 Page 8 2009-11-19 SPP80P06P G SPB80P06P G PG-TO220-3 Rev 1.4 Page 9 2009-11-19 SPP80P06P G SPB80P06P G PG-TO263-3 Rev 1.4 Page 10 2009-11-19 SPP80P06P G SPB80P06P G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.4 Page 11 2009-11-19