BCP 70M PNP Silicon AF Power Transistor Preliminary data 4 • For AF driver and output stages • High collector current 5 • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BCP 70M PBs Q62702-C2596 Package 1 = E 2 = C 3 = E 4 = B 5 = C SCT-595 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 32 Collector-base voltage VCBO 32 Emitter-base voltage VEBO 5 DC collector current IC 3 Peak collector current I CM 6 Base current IB 200 Peak base current I BM 500 Total power dissipation, T S ≤ 94 °C Ptot 1.7 W Junction temperature Tj 150 °C Storage temperature T stg V A mA -65...+150 Thermal Resistance Junction ambient 1) RthJA ≤ 88 Junction - soldering point RthJS ≤ 33 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-05-1998 1998-11-01 BCP 70M Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 32 - - I C = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 32 - - I C = 100 µA, IB = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - I E = 10 µA, I C = 0 Collector cutoff current I CBO - - 100 nA I CBO - - 20 µA I EBO - - 100 nA V VCB = 30 V, I E = 0 Collector cutoff current VCB = 30 V, I E = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, I C = 0 hFE DC current gain 1) - I C = 10 mA, VCE = 5 V 25 - - I C = 500 mA, V CE = 1 V 85 - 475 I C = 2 A, VCE = 2 V 50 - - VCEsat - 0.18 - VBEsat - - 1.2 fT - 100 - MHz Ccb - 80 - pF Collector-emitter saturation voltage1) V I C = 2 A, I B = 0.2 A Base-emitter saturation voltage 1) I C = 2 A, I B = 0.2 A AC Characteristics Transition frequency I C = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Jun-05-1998 1998-11-01 BCP 70M Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy 2000 mW 1600 TS P tot 1400 1200 1000 TA 800 600 400 200 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f (tp) Ptotmax / PtotDC = f (tp) 10 2 10 3 Ptotmax / PtotDC RthJS K/W 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group - 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Jun-05-1998 1998-11-01 BCP 70M DC current gain h FE = f (I C) Collector-emitter saturation voltage VCE = 2V IC = f (VCEsat ), hFE = 10 10 4 10 3 mA 100°C - 25°C 3 IC 10 -55°C hFE 10 2 100°C 25°C -50°C 10 2 10 1 10 1 10 0 0 10 10 1 10 2 10 3 mA 10 10 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V 4 IC VCEsat Base-emitter saturation voltage Collector current I C = f (VBE) I C = f (VBEsat), hFE = 10 VCE = 2V 10 4 10 4 mA IC mA 10 3 3 I C 10 -50°C 25°C 100°C 10 2 10 2 10 1 10 1 10 0 0.0 0.50 0.2 0.4 0.6 0.8 1.0 V 10 0 0.0 1.3 VBEsat Semiconductor Group Semiconductor Group -50°C 25°C 100°C 0.2 0.4 0.6 0.8 1.0 V 1.3 VBE 44 Jun-05-1998 1998-11-01