IRF IRFZ34VLPBF

PD - 95560
Advanced Process Technology
Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
l Lead-Free
Description
IRFZ34VSPbF
IRFZ34VLPbF
®
l
l
HEXFET Power MOSFET
D
VDSS = 60V
RDS(on) = 28mΩ
G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
ID = 30A
S
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2 Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ34VL) is available for lowprofile application.
D2Pak
IRFZ34VS
TO-262
IRFZ34VL
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
30
21
120
70
0.46
± 20
30
7.0
4.5
-55 to + 175
Units
A
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
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Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
Typ.
Max.
Units
–––
–––
2.15
40
°C/W
1
07/15/04
IRFZ34VS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
60
–––
–––
2.0
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.062
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
65
31
40
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚…
–––
–––
–––
–––
1120
250
59
260
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA…
28
mΩ VGS = 10V, ID = 18A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 18A„…
25
VDS = 60V, VGS = 0V
µA
250
VDS = 48V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
49
ID = 30A
12
nC
VDS = 48V
18
VGS = 10V, See Fig. 6 and 13 …
–––
VDD = 30V
–––
ID = 30A
ns
–––
RG = 12Ω
–––
VGS = 10V, See Fig. 10 „ …
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5 …
81
mJ
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
30
––– –––
showing the
A
G
integral reverse
––– ––– 120
S
p-n junction diode.
––– ––– 1.6
V
TJ = 25°C, IS = 30A, VGS = 0V „
––– 70 110
ns
TJ = 25°C, IF = 30A
––– 99 150
nC
di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 180µH
RG = 25Ω, IAS = 30A. (See Figure 12)
ƒ ISD ≤ 30A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
2
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Uses IRFZ34V data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
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IRFZ34VS/LPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
4.5V
100
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
4.5V
10
1
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.5
TJ = 25 ° C
100
TJ = 175 ° C
10
V DS = 50V
20µs PULSE WIDTH
5
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
4
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
TJ = 175 ° C
11
ID = 30A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFZ34VS/LPbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1600
Ciss
1200
800
Coss
400
20
VGS , Gate-to-Source Voltage (V)
2000
ID = 30A
VDS = 48V
VDS = 30V
VDS = 12V
16
12
8
4
Crss
0
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
100
TJ = 175 ° C
100
10
TJ = 25 ° C
10us
100us
10
1
0.1
0.0
1ms
V GS = 0 V
0.4
0.8
1.2
1.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
2.0
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFZ34VS/LPbF
30
VDS
VGS
ID , Drain Current (A)
25
RD
D.U.T.
RG
+
-VDD
20
10V
15
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
DRIVER
D.U.T
RG
+
V
- DD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFZ34VS/LPbF
160
TOP
BOTTOM
ID
12A
21A
30A
120
80
40
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFZ34VS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRFZ34VS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF 530S WIT H
LOT CODE 8024
AS S EMBLE D ON WW 02, 2000
IN T HE ASS E MBLY LINE "L"
INT E RNAT IONAL
RECT IF IE R
LOGO
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
PART NUMB ER
F 530S
ASS E MBLY
LOT CODE
DAT E CODE
YEAR 0 = 2000
WE EK 02
LINE L
OR
INTE RNAT IONAL
RECT IFIE R
LOGO
AS S EMBLY
LOT CODE
8
PART NUMBE R
F530S
DAT E CODE
P = DES IGNATE S LEAD-F REE
PRODUCT (OPT IONAL)
YEAR 0 = 2000
WEEK 02
A = AS S EMBLY S IT E CODE
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IRFZ34VS/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS S E MB LE D ON WW 19, 1997
IN T HE AS S E MB LY LINE "C"
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
INT E RNAT IONAL
RE CT IF IE R
LOGO
AS S E MB LY
LOT CODE
PART NUMBE R
DAT E CODE
YEAR 7 = 1997
WE E K 19
LINE C
OR
INT E RNAT IONAL
RE CT IF IE R
LOGO
AS S E MB LY
LOT CODE
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PART NUMBE R
DAT E CODE
P = DE S IGNAT E S LEAD-FRE E
PRODUCT (OPT IONAL)
YE AR 7 = 1997
WEE K 19
A = AS SE MB LY S IT E CODE
9
IRFZ34VS/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
10
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