PD - 93858 IRHM9260 JANSR2N7426 200V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) RAD-Hard ™ ® HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9260 100K Rads (Si) IRHM93260 300K Rads (Si) RDS(on) 0.160Ω 0.160Ω I D QPL Part Number -27A JANSR2N7426 -27A JANSF2N7426 TO-254AA International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n n Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -27 -17 -108 250 2.0 ±20 500 -27 25 -9.0 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10s) 9.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 11/27/00 IRHM9260, JANSR2N7426 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — V -0.28 — V/°C — 0.160 Ω — — — — -4.0 — -25 -250 V S( ) — — — — — — — — — 6.8 -100 100 300 60 70 37 83 140 172 — Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -17A ➃ nC VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -17A ➃ VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -27A VDS = -100V ns VDD = -100V, ID = -27A RG = 2.35Ω Ω Parameter BVDSS Drain-to-Source Breakdown Voltage -200 ∆BV DSS /∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 13 IDSS Zero Gate Voltage Drain Current — — µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 6220 903 150 — — — VGS = 0V, VDS = -25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -27 -108 -3.3 600 10 Test Conditions A V ns µC Tj = 25°C, IS = -27A, VGS = 0V ➃ Tj = 25°C, IF = -27A, di/dt ≥ 100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.50 0.21 — — 48 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHM9260, JANSR2N7426 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter 100K Rads(Si)1 Min BVDSS VGS(th) IGSS IGSS I DSS RDS(on) RDS(on) V SD Drain-to-Source Breakdown Voltage Gate Threshold Voltage ➃ Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-254) Diode Forward Voltage ➃ Units 300K Rads (Si)2 Test Conditions Max Min Max -200 -2.0 — — — — — -4.0 -100 100 - 25 0.154 -200 -2.0 — — — — — -5.0 -100 100 -25 0.154 nA µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -160V, VGS =0V VGS = -12V, ID =-17A — 0.160 — 0.160 Ω VGS = -12V, ID = -17A — -3.3 — -3.3 V VGS = 0V, IS = -27A V 1. Part number IRHM9260 2. Part number IRHM93260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2)) 28.0 36.8 Energy (MeV) 285 305 Range (µm) 43.0 39.0 VDS (V) @VGS=0V @VGS=5V @VGS=10V -200 -200 -200 -200 -200 -125 @VGS=15V -200 -75 @VGS=20V — — -250 VDS -200 -150 Cu Br -100 -50 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM9260, JANSR2N7426 1000 Pre-Irradiation 1000 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 100 -5.0V -5.0V 1 10 1 2.5 100 TJ = 150 ° C V DS = -50V 20µs PULSE WIDTH 7 8 9 10 11 12 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 ° C 6 10 100 Fig 2. Typical Output Characteristics 1000 5 ° -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 J 10 100 -VDS , Drain-to-Source Voltage (V) -I D , Drain-to-Source Current (A) 20µs PULSE WIDTH T = 150 C 20µs PULSE WIDTH TJ = 25 °C 10 4 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP ID = -27A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 Ciss 6000 4000 C oss 2000 20 -VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance (pF) IRHM9260, JANSR2N7426 ID = -27A VDS = 160V VDS = 100V VDS = 40V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 C rss 0 0 1 10 0 100 50 150 200 250 300 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 -ISD , Reverse Drain Current (A) 100 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -II D , Drain Current (A) 100 TJ = 150 ° C 100 10 TJ = 25 ° C 1 100us 1ms 10 10ms V GS = 0 V 0.1 0.0 1.0 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM9260, JANSR2N7426 Pre-Irradiation 30 RD V DS VGS 25 D.U.T. -ID , Drain Current (A) RG + V DD 20 -12V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM9260, JANSR2N7426 A D R IV E R 0.01 Ω tp EAS , Single Pulse Avalanche Energy (mJ) VD D IA S -20V -12V ID -12A -17A BOTTOM -27A TOP 1000 D .U .T. RG 1200 L VDS 15V Fig 12a. Unclamped Inductive Test Circuit 800 600 400 200 0 25 IAS 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF .3µF -12 V QGS QGD D.U.T. VGS VG -3mA IG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com +VDS ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM9260, JANSR2N7426 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by ➄ Total Dose Irradiation with VGS Bias. maximum junction temperature. ➁ VDD =-50V, starting TJ = 25°C, L= 3.3mH, Peak IL=- 27A, VGS = -12V ➂ ISD ≤ - 27A, di/dt ≤ -280A/µs, VDD ≤ - 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A ➅ Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions — TO-254AA 0.12 [.005] 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 31.40 [1.235] 30.35 [1.195] 1 2 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 3 2 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 B 17.40 [.685] 16.89 [.665] 4.82 [.190] 3.81 [.150] 3X 3.81 [.150] 1.14 [.045] 0.89 [.035] 3.81 [.150] 3.81 [.150] 0.36 [.014] 2X NOT ES : B 2X 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A NOT ES : A PIN AS S IGNMENT S 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 1 = DRAIN 2. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 2 = S OURCE 3 = GAT E 3. CONT ROLLING DIMENS ION: INCH. 1.27 [.050] 1.02 [.040] A 22.73 [.895] 21.21 [.835] 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] PIN AS S IGNMENT S 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 1 = DRAIN 2. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 2 = S OURCE 3. CONT ROLLING DIMENS ION: INCH. 3 = GAT E 4. CONF ORMS T O JEDEC OUT LINE T O-254AA BEF ORE LEADF ORMING. 4. CONF ORMS T O JEDEC OUT LINE T O-254AA. CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 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