PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. PTF080101M Package PG-RFP-10 Features Gain & Efficiency vs. Output Power 21 70 20 60 19 50 Gain 18 40 17 30 16 20 Efficiency 15 Drain Efficiency (%) Gain (dB) VDD = 28 V, IDQ = 180 mA, ƒ = 960 MHz 10 14 0 20 25 30 35 40 45 Output Power (dBm) • Typical EDGE performance - Average output power = 5.0 W - Gain = 19 dB - Efficiency = 37% - EVM = 2.0% • Typical CW performance - Output Power at P–1dB = 12.5 W - Gain = 18 dB - Efficiency = 50% • Integrated ESD protection: Human Body Model Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power • Pb-free and RoHS compliant RF Characteristics Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 16 — — dB Drain Efficiency ηD 35 — — % Intermodulation Distortion IMD — — –28 dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 02.1, 2009-02-18 PTF080101M DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 A RDS(on) — 0.83 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 150 °C Total Device Dissipation PD 18.8 W 0.15 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 10 W DC) RθJC 6.5 °C/W Ordering Information Type Package Outline Package Description Marking PTF080101M PG-RFP-10 Molded plastic, SMD 0081 *See Infineon distributor for future availability. Data Sheet 2 of 8 Rev. 02.1, 2009-02-18 PTF080101M Typical Performance (data taken in production test fixture) Broadband Performance Typical EDGE Performance VDD = 28 V, IDQ = 180 mA, POUT = 40 dBm VDD = 28 V, IDQ = 180 mA, ƒ = 959.8 MHz 30 60 5 50 10 40 0 30 20 Return Loss -20 880 900 920 940 960 980 3 30 2 20 1 0 10 1000 0 28 30 32 34 36 Two-tone Drive-up VDD = 28 V, IDQ = 180 mA, ƒ = 959.8 MHz VDD = 28 V, IDQ = 180 mA, ƒ = 960 MHz, 1 MHz tone spacing -30 -20 -40 -30 IMD (dBc) 200 kHz -50 400 kHz 50 Efficiency 40 -40 30 IM5 IM3 -50 20 IM7 -60 -70 38 Output Power (dBm) EDGE Modulation Spectrum Performance -60 10 EVM Frequency (MHz) Modulation Spectrum (dBc) 40 Efficiency 10 Drain Efficiency (%) -10 4 Drain Efficiency (%) 50 Gain RMS EVM (Average %). 20 Drain Efficiency (%) Gain (dB), Return Loss (dB) Efficiency 600 kHz -80 -70 26 28 30 32 34 36 38 25 30 35 40 Output Power, avg. (dBm) Output Power (dBm) Data Sheet 0 20 40 3 of 8 Rev. 02.1, 2009-02-18 PTF080101M Typical Performance (cont.) Gate-Source Voltage vs. Temperature Normalized Bias Voltage Voltage normalized to typical gate voltage, series show current. 1.04 0.05 1.03 0.28 0.51 1.02 0.74 1.01 0.97 1.00 1.2 0.99 0.98 0.97 0.96 -20 0 20 40 60 80 100 Case Temperature (ºC) Broadband Circuit Impedance Z Source Ω Frequency D Z Source Z Load G S Data Sheet Z Load Ω MHz R jX R jX 820 3.73 2.10 10.41 3.92 840 3.81 2.22 9.61 4.14 860 3.83 2.30 9.00 4.48 880 3.76 2.39 8.55 4.89 900 3.61 2.50 8.24 5.32 920 3.37 2.69 8.02 5.76 940 3.08 2.96 7.89 6.20 960 2.76 3.35 7.84 6.63 980 2.43 3.86 7.85 7.04 1000 2.13 4.47 7.91 7.43 4 of 8 Rev. 02.1, 2009-02-18 PTF080101M Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 Q1 BCP56 V DD C2 0.001µF C3 0.001µF R4 2K V R5 10 V R6 5.1KV C4 10µF 35V C5 0.1µF l9 R7 5.1K V R8 10 V C11 36pF C6 36pF l15 l8 RF_IN l1 C8 36pF l3 l4 C7 5.1pF l6 l7 VDD C15 36pF DUT l5 C13 1µF C10 36pF l14 l2 C12 10µF 50V l10 l11 l12 C9 10pF l13 C14 4.5pF l16 l17 RF_OUT C16 3.1pF 08 0101m_sch R3 1K V Reference circuit schematic for ƒ = 960 MHz Circuit Assembly Information DUT PCB Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14 l15 l16 l17 PTF080101M 0.76 mm [.030"] thick, εr = 4.5 Electrical Characteristics at 960 MHz 1 0.016 0.132 0.028 0.101 0.015 0.086 0.050 0.106 0.086 0.020 0.061 0.111 0.022 0.028 0.100 0.070 0.016 LDMOS Transistor Rogers TMM4 2 oz. copper Dimensions: L x W (mm) Dimensions: L x W (in.) λ, 50.0Ω λ, 75.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 10.0 Ω λ, 10.0 Ω λ, 10.0 Ω λ, 73.0 Ω λ, 73.0 Ω λ, 29.0 Ω λ, 12.5 Ω λ, 12.5 Ω λ, 12.5 Ω λ, 73.0 Ω λ, 73.0 Ω λ, 50.0 Ω λ, 50.0 Ω 2.77 x 1.27 25.65 x 0.64 4.83 x 1.27 17.20 x 1.27 2.39 x 11.99 13.08 x 11.99 7.65 x 11.99 18.49 x 0.64 15.16 x 0.64 3.30 x 3.30 9.42 x 9.19 17.53 x 9.19 3.35 x 9.19 4.90 x 0.64 17.53 x 0.64 11.94 x 1.22 2.67 x 1.22 0.109 1.010 0.190 0.677 0.094 0.515 0.301 0.728 0.597 0.130 0.371 0.690 0.132 0.193 0.690 0.470 0.105 x x x x x x x x x x x x x x x x x 0.050 0.025 0.050 0.050 0.472 0.472 0.472 0.025 0.025 0.130 0.362 0.362 0.362 0.025 0.025 0.048 0.048 1Electrical characteristics are rounded. Data Sheet 5 of 8 Rev. 02.1, 2009-02-18 PTF080101M Reference Circuit (cont.) R5 C4 C3 + R3 R2 10 35V C5 C6 QQ1 R4 R6 R1 R7 V DD C1 LM V DD C2 C11 Q1 C12 C13 R8 RF_IN C10 C8 RF_OUT C15 C16 C7 C14 C9 080101M_C_02 080101m_assy Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5 C6, C8, C10, C11, C15 C7 C9 C12 C13 C14 C16 Q1 QQ1 R1 R2 R3 R4 R5, R8 R6, R7 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 36 pF Digi-Key Digi-Key Digi-Key ATC PCC1772CT-ND PCS6106TR-ND PCC104BCT-ND 100B 360 Ceramic capacitor, 5.1 pF Ceramic capacitor, 10 pF Tantalum capacitor, 10 µF, 50 V Capacitor, 1.0 µF Ceramic capacitor, 4.5 pF Ceramic capacitor, 3.1 pF Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 1 k-ohms Potentiometer 2 k-ohms Chip Resistor 10 ohms Chip Resistor 5.1 k-ohms ATC ATC Garrett Electronics Toshiba ATC ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 100B 5R1 100B 100 TPS106K050R0400 C4532XTRZA105M 100B 4R5 100B 3R1 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P1KECT-ND 3224W-202ETR-ND P10ECT-ND P5.1KECT-ND *Gerber Files for this circuit available on request Data Sheet 6 of 8 Rev. 02.1, 2009-02-18 PTF080101M Package Outline Specifications 0.22 ±0.05 0.08 M C 0.09 0.1 A A 3 ±0.1 6° MAX. 0.5 H +0.08 0.125–0 .05 1.1 MAX. 0.85 ±0.1 0.15 MAX. Package PG-RFP-10 (TSSOP-10 Outline) +0.15 0.42 –0.10 A B C 4.9 0.25 M A B C PG-RFP-10 10 6 1 5 3 ±0.1 B Index marking Notes: Unless otherwise specified 1. Dimensions are mm 2. Lead thickness: 0.09 3. Pins: 1 – 5 = gate, underside = source, 6 – 10 = drain Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 7 of 8 Rev. 02.1, 2009-02-18 PTF080101M Confidential—Limited Distribution Revision History: 2009-02-18 2005-12-16, Data Sheet Previous version: Data Sheet Page 4 Subjects (major changes since last revision) Add Temperature graph and impedance information. 5–6 all Add circuit information. Remove Preliminary status 6 Fixed typing error We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-02-18 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 02.1, 2009-02-18