NX3V1T66 Low-voltage analog switch Rev. 02 — 24 July 2008 Product data sheet 1. General description The NX3V1T66 provides one single-pole single-throw analog switch function. It has two input/output terminals (Y and Z) and an active HIGH enable input pin (E). When pin E is LOW, the analog switch is turned off. A low input voltage threshold allows pin E to be driven by lower level logic signals without a significant increase in supply current ICC. This makes it possible for the NX3V1T66 to switch 3.6 V signals with a 1.8 V digital controller, eliminating the need for logic level translation. The NX3V1T66 allows signals with amplitude up to VCC to be transmitted from Y to Z or from Z to Y. Its ultra-low ON resistance (0.3 Ω) and flatness (0.1 Ω) ensures minimal attenuation and distortion of transmitted signals. 2. Features n Wide supply voltage range from 1.4 V to 3.6 V n Very low ON resistance (peak): u 0.8 Ω (typical) at VCC = 1.4 V u 0.5 Ω (typical) at VCC = 1.65 V u 0.3 Ω (typical) at VCC = 2.3 V u 0.25 Ω (typical) at VCC = 2.7 V n High noise immunity n ESD protection: u HBM JESD22-A114E Class 3A exceeds 7500 V u MM JESD22-A115-A exceeds 200 V u CDM AEC-Q100-011 revision B exceeds 1000 V n CMOS low-power consumption n Latch-up performance exceeds 100 mA per JESD 78 Class II Level A n Enable input accepts voltages above supply voltage n 1.8 V control logic at VCC = 3.6 V n High current handling capability (500 mA continuous current under 3.3 V supply) n Specified from −40 °C to +85 °C and from −40 °C to +125 °C 3. Applications n Cell phone n PDA n Portable media player NX3V1T66 NXP Semiconductors Low-voltage analog switch 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version NX3V1T66GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 NX3V1T66GM −40 °C to +125 °C XSON6 SOT886 plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1.45 × 0.5 mm 5. Marking Table 2. Marking Type number Marking code NX3V1T66GW dO NX3V1T66GM dO 6. Functional diagram Y E Z Z Y E 001aah372 001aag487 Fig 1. Logic symbol Fig 2. Logic diagram 7. Pinning information 7.1 Pinning NX3V1T66 NX3V1T66 Y 1 Z 2 GND 3 5 4 VCC E 6 VCC Z 2 5 n.c. GND 3 4 E Transparent top view Fig 4. Pin configuration SOT886 (XSON6) NX3V1T66_2 Product data sheet 1 001aah555 001aai591 Fig 3. Pin configuration SOT353-1 (TSSOP5) Y © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 2 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch 7.2 Pin description Table 3. Pin description Symbol Pin Description SOT353-1 SOT886 Y 1 1 independent input or output Z 2 2 independent output or input GND 3 3 ground (0 V) E 4 4 enable input (active HIGH) n.c. - 5 not connected VCC 5 6 supply voltage 8. Functional description Table 4. Function table[1] Input E Switch L OFF-state H ON-state [1] H = HIGH voltage level; L = LOW voltage level. 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage VI input voltage Conditions Min Max Unit −0.5 +4.6 V [1] −0.5 +4.6 V [2] −0.5 VCC + 0.5 V VI < −0.5 V −50 - enable input E VSW switch voltage IIK input clamping current ISK switch clamping current VI < −0.5 V or VI > VCC + 0.5 V - ±50 mA ISW switch current VSW > −0.5 V or VSW < VCC + 0.5 V; source or sink current - ±500 mA VSW > −0.5 V or VSW < VCC + 0.5 V; pulsed at 1 ms duration, < 10 % duty cycle; peak current - ±750 mA −65 +150 °C - 250 mW Tstg storage temperature total power dissipation Ptot Tamb = −40 °C to +125 °C [3] [1] The minimum input voltage rating may be exceeded if the input current rating is observed. [2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed. [3] For TSSOP5 package: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 package: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. NX3V1T66_2 Product data sheet mA © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 3 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch 10. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC supply voltage VI input voltage Conditions enable input E [1] VSW switch voltage Tamb ambient temperature ∆t/∆V input transition rise and fall rate [2] VCC = 1.4 V to 3.6 V Min Max Unit 1.4 3.6 V 0 3.6 V 0 VCC V −40 +125 °C - 200 ns/V [1] To avoid sinking GND current from of terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit for the voltage drop across the switch. [2] Applies to control signal levels. 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter Tamb = 25 °C Conditions Min VIH VIL HIGH-level input voltage LOW-level input voltage Typ Tamb = −40 °C to +125 °C Max Min Unit Max Max (85 °C) (125 °C) VCC = 1.4 V to 1.6 V 0.9 - - 0.9 - - V VCC = 1.65 V to 1.95 V 0.9 - - 0.9 - - V VCC = 2.3 V to 2.7 V 1.1 - - 1.1 - - V VCC = 2.7 V to 3.6 V 1.3 - - 1.3 - - V VCC = 1.4 V to 1.6 V - - 0.3 - 0.3 0.3 V VCC = 1.65 V to 1.95 V - - 0.4 - 0.4 0.3 V VCC = 2.3 V to 2.7 V - - 0.4 - 0.4 0.4 V VCC = 2.7 V to 3.6 V - - 0.5 - 0.5 0.5 V II input leakage current enable input E; VI = GND to 3.6 V; VCC = 1.4 V to 3.6 V - - - - ±0.5 ±1 µA IS(OFF) OFF-state leakage current Y port; see Figure 5; VCC = 1.4 V to 3.6 V; - - ±5 - ±50 ±500 nA IS(ON) ON-state leakage current Z port; see Figure 6; VCC = 1.4 V to 3.6 V; - - ±5 - ±50 ±500 nA ICC supply current VI = VCC or GND; VCC = 3.6 V; VSW = GND or VCC; IO = 0 A - - ±100 - 690 6000 nA ∆ICC additional VSW = GND or VCC supply current VI = 2.6 V; VCC = 3.6 V - 0.35 0.7 - 1 1 µA VI = 1.8 V; VCC = 3.6 V - 2.5 4 - 5 5 µA VI = 1.8 V; VCC = 2.5 V - 50 200 - 300 500 nA NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 4 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter Tamb = 25 °C Conditions Tamb = −40 °C to +125 °C Min Typ Max Min Unit Max Max (85 °C) (125 °C) CI input capacitance - 1.0 - - - - pF CS(OFF) OFF-state capacitance - 70 - - - - pF CS(ON) ON-state capacitance - 205 - - - - pF 11.1 Test circuits VCC VCC E VIL IS Z VI E VIH Y IS IS GND Y GND VI VO Z 001aag488 001aag489 VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V. Fig 5. VO Test circuit for measuring OFF-state leakage current VI = 0.3 V or VCC − 0.3 V; VO = open circuit. Fig 6. Test circuit for measuring ON-state leakage current 11.2 ON resistance Table 8. Resistance RON At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 13. Symbol RON(peak) Parameter ON resistance (peak) Tamb = −40 °C to +85 °C Conditions Min Typ[1] Max Min Max VCC = 1.4 V - 0.8 1.9 - 2.1 Ω VCC = 1.65 V - 0.5 0.8 - 0.9 Ω VCC = 2.3 V - 0.3 0.5 - 0.6 Ω VCC = 2.7 V - 0.25 0.45 - 0.5 Ω VI = GND to VCC; ISW = 100 mA; see Figure 7 NX3V1T66_2 Product data sheet Tamb = −40 °C to +125 °C Unit © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 5 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch Table 8. Resistance RON …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 13. Symbol RON(flat) Parameter ON resistance (flatness) Tamb = −40 °C to +85 °C Conditions Tamb = −40 °C to +125 °C Unit Min Typ[1] Max Min Max VCC = 1.4 V - 0.5 1.7 - 1.8 Ω VCC = 1.65 V - 0.25 0.6 - 0.7 Ω VCC = 2.3 V - 0.1 0.2 - 0.2 Ω VCC = 2.7 V - 0.1 0.2 - 0.2 Ω [2] VI = GND to VCC; ISW = 100 mA [1] Typical values are measured at Tamb = 25 °C. [2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature. 11.3 ON resistance test circuit and graphs 001aah800 0.8 RON (Ω) 0.6 VSW (1) 0.4 VCC (2) E VIH (3) Z VI 0.2 Y GND (4) (5) ISW 0 0 1 2 RON = VSW / ISW. 3 4 VI (V) 001aah375 (1) VCC = 1.5 V. (2) VCC = 1.8 V. (3) VCC = 2.5 V. (4) VCC = 2.7 V. (5) VCC = 3.3 V. Measured at Tamb = 25 °C. Fig 7. Test circuit for measuring ON resistance Fig 8. Typical ON resistance as a function of input voltage NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 6 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch 001aah805 0.8 001aah801 0.6 RON (Ω) RON (Ω) 0.6 0.4 (1) 0.4 (2) (1) (3) (2) 0.2 (3) 0.2 (4) (4) 0 0 0 1 2 0 3 1 2 (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 9. ON resistance as a function of input voltage; VCC = 1.5 V 001aah802 0.6 3 VI (V) VI (V) Fig 10. ON resistance as a function of input voltage; VCC = 1.8 V 001aah803 0.6 RON (Ω) RON (Ω) 0.4 0.4 (1) (1) (2) (2) (3) 0.2 (3) 0.2 (4) 0 (4) 0 0 1 2 3 0 VI (V) 2 3 VI (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 11. ON resistance as a function of input voltage; VCC = 2.5 V Fig 12. ON resistance as a function of input voltage; VCC = 2.7 V NX3V1T66_2 Product data sheet 1 © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 7 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch 001aah804 0.6 RON (Ω) 0.4 (1) (2) (3) 0.2 (4) 0 0 1 2 3 4 VI (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. Fig 13. ON resistance as a function of input voltage; VCC = 3.3 V 12. Dynamic characteristics Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit Figure 15. Symbol Parameter enable time ten disable time tdis 25 °C Conditions Unit Min Max Min VCC = 1.4 V to 1.6 V - 35 49 - 53 57 ns VCC = 1.65 V to 1.95 V - 28 40 - 43 48 ns VCC = 2.3 V to 2.7 V - 20 30 - 32 35 ns VCC = 2.7 V to 3.6 V - 18 28 - 30 32 ns - 32 70 - 80 90 ns Max Max (85 °C) (125 °C) E to Y; see Figure 14 E to Y; see Figure 14 VCC = 1.4 V to 1.6 V [1] −40 °C to +125 °C Typ[1] VCC = 1.65 V to 1.95 V - 23 55 - 60 65 ns VCC = 2.3 V to 2.7 V - 14 25 - 30 35 ns VCC = 2.7 V to 3.6 V - 11 20 - 25 30 ns Typical values are measured at Tamb = 25 °C and VCC = 1.5 V, 1.8 V, 2.5 V and 3.3 V respectively. NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 8 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch 12.1 Waveform and test circuits VI E input VM GND ten Y output OFF to HIGH HIGH to OFF tdis VOH VX VX GND switch disabled switch enabled switch disabled 001aah875 Measurement points are given in Table 10. Logic level: VOH is the typical output voltage that occurs with the output load. Fig 14. Enable and disable times Table 10. Measurement points Supply voltage Input Output VCC VM VX 1.4 V to 3.6 V 0.5VCC 0.9VOH VCC E Y/Z G VI V VO RL Z/Y CL VEXT = 1.5 V 001aah377 Test data is given in Table 11. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. Fig 15. Load circuit for switching times Table 11. Test data Supply voltage Input Load VCC VI tr, tf CL RL 1.4 V to 3.6 V VCC ≤ 2.5 ns 35 pF 50 Ω NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 9 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch 12.2 Additional dynamic characteristics Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf ≤ 2.5 ns; Tamb = 25 °C. Symbol Parameter Conditions THD fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 16 total harmonic distortion Min 0.05 - % VCC = 1.65 V; VI = 1.2 V (p-p) - 0.03 - % VCC = 2.3 V; VI = 1.5 V (p-p) - 0.01 - % - 0.01 - % - 25 - MHz - −90 - dB - 0.32 - V VCC = 1.5 V - 6.5 - pC VCC = 1.8 V - 6.5 - pC VCC = 2.5 V - 6.5 - pC VCC = 3.3 V - 6.5 - pC VCC = 2.7 V; VI = 2 V (p-p) αiso isolation (OFF-state) fi = 100 kHz; RL = 50 Ω; see Figure 18 Vct crosstalk voltage between digital inputs and switch; fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 19 [1] VCC = 1.4 V to 3.6 V [1] VCC = 1.4 V to 3.6 V VCC = 1.4 V to 3.6 V charge injection [1] Unit - RL = 50 Ω; see Figure 17 Qinj Max VCC = 1.4 V; VI = 1 V (p-p) −3 dB frequency response f(−3dB) Typ [1] fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V; Rgen = 0 Ω; see Figure 20 fi is biased at 0.5VCC. 12.3 Test circuits VCC 0.5VCC E VIH Y/Z RL Z/Y D fi 001aah378 Fig 16. Test circuit for measuring total harmonic distortion NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 10 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch VCC 0.5VCC E VIH RL Y/Z Z/Y dB fi 001aah379 Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB. Fig 17. Test circuit for measuring the frequency response when channel is in ON-state 0.5VCC VCC VIL RL 0.5VCC E Y/Z RL Z/Y dB fi 001aah380 Adjust fi voltage to obtain 0 dBm level at input. Fig 18. Test circuit for measuring isolation (OFF-state) NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 11 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch VCC E Y/Z G VI Z/Y RL RL 0.5VCC 0.5VCC CL V VO 001aah383 a. Test circuit logic input (E) off on VO off Vct 001aah381 b. Input and output pulse definitions Fig 19. Test circuit for measuring crosstalk voltage between digital inputs and switch NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 12 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch VCC E Y/Z G VI V VO RL Z/Y Rgen CL Vgen GND 001aah385 a. Test circuit logic input (E) off on VO off VO 001aah384 b. Input and output pulse definitions Definition: Qinj = ∆VO × CL. ∆VO = output voltage variation. Rgen = generator resistance. Vgen = generator voltage. Fig 20. Test circuit for measuring charge injection NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 13 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm E D SOT353-1 A X c y HE v M A Z 5 4 A2 A (A3) A1 θ 1 Lp 3 L e w M bp detail X e1 0 1.5 3 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(1) e e1 HE L Lp v w y Z(1) θ mm 1.1 0.1 0 1.0 0.8 0.15 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 1.3 2.25 2.0 0.425 0.46 0.21 0.3 0.1 0.1 0.60 0.15 7° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT353-1 REFERENCES IEC JEDEC JEITA MO-203 SC-88A EUROPEAN PROJECTION ISSUE DATE 00-09-01 03-02-19 Fig 21. Package outline SOT353-1 (TSSOP5) NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 14 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× (2) L L1 e 6 5 e1 4 e1 6× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) max A1 max b D E e e1 L L1 mm 0.5 0.04 0.25 0.17 1.5 1.4 1.05 0.95 0.6 0.5 0.35 0.27 0.40 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 MO-252 Fig 22. Package outline SOT886 (XSON6) NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 15 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch 14. Abbreviations Table 13. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model PDA Personal Digital Assistant TTL Transistor-Transistor Logic 15. Revision history Table 14. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3V1T66_2 20080724 Product data sheet - NX3V1T66_1 Modifications: NX3V1T66_1 • Added type number NX3V1T66GW (TSSOP5 / SOT353-1 package) 20080327 Product data sheet NX3V1T66_2 Product data sheet - - © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 16 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] NX3V1T66_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 24 July 2008 17 of 18 NX3V1T66 NXP Semiconductors Low-voltage analog switch 18. Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 11.1 11.2 11.3 12 12.1 12.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ON resistance test circuit and graphs. . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Waveform and test circuits . . . . . . . . . . . . . . . . 9 Additional dynamic characteristics . . . . . . . . . 10 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 July 2008 Document identifier: NX3V1T66_2