PD-97271 RevA IRAM136-0461G Series 4A, 600V Plug N DriveTM Integrated Power Module for Energy Efficient Motor Drives Description International Rectifier’s IRAM136-0461G is an Integrated Power Module developed and optimized for electronic motor control in energy saving applications. Targeting the sub 300W three-phase motor drive applications, such as fan or refrigerator compressor drives, this module offers the highest level of integration available in the market today. It features an input diode rectification bridge and a three-phase inverter, complete with bootstrap diodes, high voltage gate driver IC, current shunt resistor and temperature sensor. This high performance AC motor-driver is housed in a compact single-in-line isolated package for a very simple design. The internal shunt offers easy current feedback for precise control and safe operation. A built-in temperature monitor and logic level shut-down function, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Features • • • • • • • • • • • Internal Rectifier Diode Bridge Internal Shunt Resistor Integrated Gate Drivers and Bootstrap Diodes Temperature Monitor Undervoltage lockout for all channels Matched propagation delay for all channels Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.1~0.3kW / up to 253V, 50/60Hz Isolation 2000VRMS /1min 1 23 Absolute Maximum Ratings Parameter Description Max. Value VRRM Input Bridge Blocking Voltage VCES IGBT Blocking Voltage 600 V+ Positive Bus Input Voltage 450 IO @ TC=25°C RMS Phase Current (FPWM=20kHz) 3.6 IO @ TC=100°C RMS Phase Current (FPWM=20kHz) 2 IO PK Pulsed RMS Phase Current (tp<100ms, FPWM=20kHz) 5 FPWM PWM Carrier Frequency 20 600 Pd Power dissipation per IGBT @ TC =25°C VISO Isolation Voltage (1min) TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150 TJ (Driver IC) Operating Junction temperature Range -40 to +150 T Mounting torque (M3 screw) www.irf.com Units V kHz 16 W 2000 VRMS 1.0 °C Nm 1 IRAM136-0461G Internal Electrical Schematic - IRAM136-0461G AC (1) D10 D11 Q1 Q3 Q2 D1 D12 D2 D3 D13 AC (2) Q5 Q4 Vbus_1 (3) Q6 D4 D5 D6 Vbus_2 (4) R10 GND_1 (5) R1 R2 D14 VB1 (11) U, VS1 (12) R3 D15 D16 R4 VB2 (9) V, VS2 (10) R5 D17 R6 D18 D19 VB3 (7) W, VS3 (8) D7 D8 D9 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16 24 HO1 R9 LO2 15 25 VB1 1 VCC HIN1 (15) HIN2 (16) HIN3 (17) 2 HIN1 LIN1 (18) 5 LIN1 Driver IC LO3 14 3 HIN2 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (19) R8 LIN3 (20) ITRIP(21) Shunt+ (22) VTH (13) THERMISTOR R7 C5 VCC (14) VSS (23) 2 www.irf.com IRAM136-0461G Absolute Maximum Ratings (Continued) Symbol Parameter Max Units IDC Input Bridge DC Output Current 9.4 A @TC=100°C, 180° cond. square wave IF(AV) Average Output Forward Current 8.7 A @TC=100°C, 180° cond. sine wave IFSM Peak One Cycle Non-Repetitive Surge Current @ TJ =150°C 100 A 8.3ms Sine Pulse rated VRRM applied 95 A 10ms Sine Pulse 80% rated VRRM applied 45.12 2 As 10ms Sine Pulse 80% rated VRRM applied 2 0.5 t=0.1 to 10 ms, no Voltage applied 2 It 2 0.5 It 2 I t for fusing 2 0.5 It for fusing 638 As Absolute Maximum Ratings Driver Function Absolute Maximum Ratings indicate substained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM/VSS. Symbol Parameter Min Max IBDF Bootstrap Diode Peak Forward Current --- 4.5 A tP= 10ms, TJ = 150°C, TC=100°C PBR Peak Bootstrap Resistor Peak Power (Single Pulse) --- 25.0 W tP=100µs, TC =100°C VS1,2,3 High Side floating supply voltage VB1,2,3 - 25 VB1,2,3 +0.3 V VB1,2,3 High Side floating supply voltage -0.3 600 V VCC Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, ITrip -0.3 Lower of (VSS+15V) or VCC+0.3V V www.irf.com Units Conditions 3 IRAM136-0461G Input Bridge Section Electrical Characteristics @TJ= 25°C Symbol Parameter VFM Forward Voltage Drop Min Typ Max Units --- 1 1.2 V @ IFM = 4A, TJ=25°C --- 0.9 1.05 V @ IFM = 4A, TJ=150°C rt Forward Slope resistance --- 22 59 mƻ VF(TD) Threshold Voltage --- 0.81 0.84 V IRM Reverese Leakage Current --- 2 15 --- 115 190 µA Conditions TJ=150°C TJ=25°C, VR= rated VRR TJ=150°C, VR= rated VRR Inverter Section Electrical Characteristics @TJ= 25°C Symbol Parameter Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V VIN=5V, IC=250µA ƩV(BR)CES / ƩT Temperature Coeff. Of Breakdown Voltage --- 0.74 --- V/°C VIN=5V, IC=1.0mA (25°C - 150°C) VCE(ON) Collector-to-Emitter Saturation Voltage --- 1.95 2.20 --- 2.40 2.80 Zero Gate Voltage Collector Current --- 1 75 --- 160 --- --- 1.25 1.65 --- 1.20 1.60 ICES VFM Diode Forward Voltage Drop Units Conditions V IC=2A, VCC=15V, TJ=150°C µA V -- -- 1.25 --- --- 1.10 RBR Bootstrap Resistor Value --- 22 --- ƻ ƩRBR/RBR Bootstrap Resistor Tolerance --- --- ±5 % 4 VIN=5V, V+=600V VIN=5V, V+=600V, TJ=150°C IC=2A IC=2A, TJ=150°C Bootstrap Diode Forward Voltage Drop VBDFM IC=2A, VCC=15V V IF=1A IF=1A, TJ=125°C www.irf.com IRAM136-0461G Inverter Section Switching Characteristics @ TJ= 25°C Symbol Parameter Min Typ Max EON Turn-On Switching Loss --- 180 260 Units Conditions EOFF Turn-Off Switching Loss --- 65 140 ETOT Total Switching Loss --- 245 400 EREC Diode Reverse Recovery energy --- 5 15 tRR Diode Reverse Recovery time --- 240 --- EON Turn-on Swtiching Loss --- 210 305 EOFF Turn-off Switching Loss --- 80 150 ETOT Total Switching Loss --- 290 455 EREC Diode Reverse Recovery energy --- 15 35 tRR Diode Reverse Recovery time --- 285 --- ns QG Turn-On IGBT Gate Charge --- 0.84 1.3 nC RBSOA Reverse Bias Safe Operating Area µJ IC=2A, V+=400V VCC=15V, L=1mH Energy losses include "tail" and diode reverse recovery See CT1 ns µJ IC=2A, V+=400V VCC=15V, L=1mH, TJ=150°C Energy losses include "tail" and diode reverse recovery See CT1 IC=2A, V+=400V, VGE=15V TJ=150°C, IC=2A, VP=600V V+= 450V VCC=+15V to 0V FULL SQUARE See CT3 TJ=150°C, VP=600V, SCSOA Short Circuit Safe Operating Area 10 --- --- µs V+= 360V, VCC=+15V to 0V See CT2 TJ=150°C, VP=600V, tSC<10µs ICSC Short Circuit Collector Current www.irf.com --- 11 --- A V+= 360V, VGE=15V VCC=+15V to 0V See CT2 5 IRAM136-0461G Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM/VSS. The offset is tested with all supplies biased at 15V differential (Note 2) Symbol Definition AC AC input voltage Min Max Units --- 253 V Hz AC AC input frequency 50 60 VB1,2,3 High side floating supply voltage VS+12 VS+20 VS1,2,3 High side floating supply offset voltage Note 3 450 VCC Low side and logic fixed supply voltage 12 20 VITRIP ITRIP input voltage VSS VSS+5 VIN Logic input voltage LIN, HIN VSS VSS+5 V V V Note 2: For more details, see IR21365 data sheet Note 3: Logic operational for VS from GND -5V to GND +600V. Logic state held for VS from GND -5V to GND -VBS. (please refer to DT97-3 for more details) Static Electrical Characteristics Driver Function VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS/COM and are applicable to all six channels. (Note 2) Symbol Definition Min Typ Max Units VIH Logic "0" input voltage 3.0 --- --- V VIL Logic "1" input voltage --- --- 0.8 V VCCUV+ VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V VCCUVVBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V VCCUVH VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V VIN,Clamp Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10µA 4.9 5.2 5.5 V IQBS Quiescent VBS supply current VIN=0V --- --- 165 µA IQCC Quiescent VCC supply current VIN=0V --- --- 3.35 mA ILK Offset Supply Leakage Current --- --- 60 µA IIN+, IEN+ Input bias current VIN=5V --- 200 300 µA IIN-, IEN- Input bias current VIN=0V --- 100 220 µA ITRIP+ ITRIP bias current VITRIP=5V --- 30 100 µA ITRIP- ITRIP bias current VITRIP=0V --- 0 1 µA 6 www.irf.com IRAM136-0461G Static Electrical Characteristics Driver Function (Continued) Symbol Definition Min Typ Max V(ITRIP) ITRIP threshold Voltage V(ITRIP,HYS) ITRIP Input Hysteresis RON,FLT Falut Output ON Resistance Units 3.85 4.3 4.75 V --- 150 --- mV --- 70 100 Ohm Dynamic Electrical Characteristics Driver only timing unless otherwise specified. Symbol Parameter Min Typ Max TON Input to Output propagation turnon delay time (see fig.11) --- 700 --- TOFF Input to Output propagation turnoff delay time (see fig. 11) --- 515 --- ns TFLIN Input Filter time (HIN, LIN) 100 200 --- ns VIN=0 & VIN=5V TBLT-Trip ITRIP Blancking Time 100 150 ns VIN=0 & VIN=5V DT Dead Time (VBS=VCC=15V) 220 290 360 ns VBS=VCC=15V MT Matching Propagation Delay Time (On & Off) --- 40 75 ns VCC= VBS= 15V, external dead time> 400ns TITrip ITrip to six switch to turn-off propagation delay (see fig. 2) --- --- 1.75 µs VCC=VBS= 15V, IC=10A, V+=300V TFLT-CLR Post ITrip to six switch to turn-off clear time (see fig. 2) --- 7.7 --- --- 6.7 --- www.irf.com Units Conditions ns VCC=VBS= 15V, IC=2A, V+=400V ms TC = 25°C TC = 100°C 7 IRAM136-0461G Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Rth(J-C) IGBT Junction to case thermal resistance (IGBT). --- 6.6 7.6 Rth(J-C) FW Diode Junction to case thermal resistance (FW Diode). --- 8.8 10.8 Rth(J-C) Input Diode Junction to case thermal resistance (Input Diode). --- 6.0 7.5 Rth(C-S) Case to Sink thermal resistance --- 0.1 --- T Mounting Tourque 0.5 0.6 1.0 Units Conditions Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/mK Nm Mounting Tourque Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter Min Typ Max RShunt Resistance TCoeff Temperature Coefficient PShunt Power Dissipation TRange Temperature Range -40 Units Conditions 336.6 340.0 343.4 mƻ 0 --- 200 ppm/°C --- --- 1.5 W --- 125 °C TC = 25°C -40°C< TC <100°C Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max R25 Resistance 20.9 22 23.1 kƻ TC = 25°C R125 Resistance 2.25 2.52 2.5 kƻ TC = 125°C B B-constant (25-50°C) 3832 3950 4335 k 125 °C Temperature Range -40 Typ. Dissipation constant 1 Units Conditions R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C Thermistor Pin Connection 2kOhm +5V VTH (13) Driver IC NTC VSS (23) 8 www.irf.com IRAM136-0461G Module Pin-Out Description Pin Name Description 1 AC AC Input 2 AC AC Input 3 Vbus_1 Input Bridge Positive Output 4 Vbus_2 Positive Bus Input Voltage 5 GND Negative Bus Input Voltage 6 na 7 VB3 none 8 W,VS3 9 VB2 10 V,VS2 11 VB1 12 U,VS1 13 VTH Temperature Feedback 14 VCC +15V Main Supply 15 HIN1 Logic Input High Side Gate Driver - Phase 1 16 HIN2 Logic Input High Side Gate Driver - Phase 2 17 HIN3 Logic Input High Side Gate Driver - Phase 3 18 LIN1 Logic Input Low Side Gate Driver - Phase 1 19 LIN2 Logic Input Low Side Gate Driver - Phase 2 20 LIN3 Logic Input Low Side Gate Driver - Phase 3 21 ITRIP Current Sense and Itrip Pin 22 Shunt+ 23 VSS High Side Floating Supply voltage 3 Output 3 - High Side Floating Supply Offset Voltage 3 High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage 2 High Side Floating Supply voltage 1 Output 1 - High Side Floating Supply Offset Voltage 1 Positive Current Sense Logic Ground 1 23 www.irf.com 9 IRAM136-0461G HIN1,2,3 LIN1,2,3 HO1,2,3 LO1,2,3 Itrip U,V,W Figure1. Input/Output Timing Diagram Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. Input-Output Logic Level Table V+ Ho Hin1,2,3 (15,16,17) U,V,W IC Driver (8,10,12) Lin1,2,3 (18,19,20) 10 Lo ITRIP HIN1,2,3 LIN1,2,3 U,V,W 0 0 0 1 0 1 1 X 1 0 1 X V+ 0 X X www.irf.com IRAM136-0461G Typical Application Connection IRAM136-0461G 1 AC AC INPUT AC In-Rush Control Vbus_1 Vbus_2 DC BUS CAPACITORS GND VB3 IRAM136-0461G BOOT-STRAP CAPACITORS W,VS3 VB2 3-Phase AC MOTOR V,VS2 VB1 U,VS1 VTH +5V VCC Temperature Monitor HIN1 HIN2 PWM in HIN3 PWM in LIN1 PWM in LIN2 CONTROLLER PWM in LIN3 PWM in ITRIP PWM in Shunt+ Itrip (Logc Level) VSS Current Sense 23 15V 10m 0.1µ 1. Electrolytic bus capacitors should be mounted as close as possible to the module bus terminals to reduce ringing and EMI problems. Additional high frequency ceramic capacitors mounted close to the module pins will improve performance. 2. In order to provide good decoupling between VCC-VSS and VB-VS terminals, the capacitors connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1∝F, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. 4. Current sense signal can be obtained from pin 22 and pin 23 5. After approx. 9 ms the FAULT is reset 6. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, and the overcurrent condition must be cleared before resuming operation www.irf.com 11 IRAM136-0461G Maximum Output Phase RMS Current - A 4.5 4.0 3.5 3.0 2.5 2.0 TC = 80ºC TC = 90ºC TC = 100ºC 1.5 1.0 TJ = 150ºC Sinusoidal Modulation 0.5 0.0 0 2 4 6 8 10 12 14 16 18 20 PWM Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Maximum Output Phase RMS Current - A VBUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6 3.0 TJ = 150°C Sinusoidal Modulation 2.5 2.0 1.5 FPWM = 20kHz FPWM = 16kHz 1.0 FPWM = 10kHz 0.5 0.0 0 10 20 30 40 50 60 70 80 90 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency VBUS=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6 12 www.irf.com IRAM136-0461G 35 TJ = 150°C Total Power Losses - W 30 Sinusoidal Modulation 25 20 15 10 IOUT = 1.0 ARMS IOUT = 1.5 ARMS 5 IOUT = 2.0 ARMS 0 0 2 4 6 8 10 12 14 16 18 20 PWM Switching Frequency - kHz Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation VBUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6 80 Total Power Losses - W 70 TJ = 150°C 60 Sinusoidal Modulation 50 40 30 FPWM = 10 kHz 20 FPWM = 16 kHz FPWM = 20 kHz 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation VBUS=400V , TJ=150°C, www.irf.com Modulation Depth=0.8, PF=0.6 13 Maximum Allowable Case Temperature -°C IRAM136-0461G 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.5 FPWM = 10 kHz FPWM = 16 kHz FPWM = 20 kHz TJ = 150°C Sinusoidal Modulation 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Output Phase Current - ARMS Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase IGBT Junction Temperature - °C 160 TJ avg. = 1.0775 x TTherm+ 9.6086 150 140 130 120 110 100 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 Internal Thermistor Temperature Equivalent Read Out - °C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature VBUS=400V, IPHASE=1.3ARMS, FPWM=16kHz 14 www.irf.com IRAM136-0461G Thermistor Pin Read-Out Voltage - V 5.0 +5V 4.5 REXT 4.0 TTHERM °C -40 3.5 3.0 2.5 2.0 1.5 1.0 0.5 -40 RTHERM TTHERM kƻ °C 759.605 25 RTHERM kƻ 22.000 TTHERM °C 90 RTHERM kƻ 2.004 -35 545.196 30 17.709 95 1.722 -30 396.070 35 14.344 100 1.486 -25 291.025 40 11.688 105 1.287 -20 216.008 45 9.578 110 1.119 -15 161.977 50 7.894 115 0.975 -10 122.638 55 6.540 120 0.854 -5 93.702 60 5.446 125 0.750 0 72.191 65 4.559 5 56.093 70 3.832 10 43.907 75 3.239 15 34.633 80 2.748 20 27.509 85 2.342 -30 -20 -10 0 10 20 30 VTherm R Therm Min Avg. Max 40 50 60 70 80 90 100 110 120 130 Thermistor Temperature - °C Recommended Bootstrap Capacitor - µF Figure 9. Thermistor Readout vs. Temperature (2kohm pull-up resistor, 5V) and Nominal Thermistor Resistance values vs. Temperature Table. 12.0 11.0 10µF 10.0 RBS DBS RG1 vB 9.0 +15V 8.0 7.0 VCC HIN HIN LIN LIN 6.8µF V+ CBS VSS COM HO VS U,V,W RG2 LO VSS 6.0 5.0 GND 4.7µF 4.0 3.3µF 3.0 2.2µF 2.0 1.5µF 1.0 0 5 10 15 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 15 IRAM136-0461G 4.0 tP = 400µs Forward voltage Drop - V 3.5 Square Wave 3.0 2.5 2.0 TJ = 25°C 1.5 TJ = 150°C 1.0 0.5 0.0 0 5 10 15 20 25 30 35 40 45 50 Instantaneous Forward Current - A Figure 11. Maximum Forward voltage Drop (Input Bridge Rectifier) Total Power Losses - W 30 TJ = 150°C 20 180° Sine Conduction 180° Rect Conduction 10 0 0 1 2 3 4 5 6 7 8 9 10 Bridge Output Current - AAVG Figure 12. Maximum Power Loss vs. Output Current (Input Bridge Rectifier) 16 www.irf.com Maximum Allowable Case Temperature -°C IRAM136-0461G 150 140 130 120 110 180° Sine Conduction 180° Rect Conduction 100 90 80 0 1 2 3 4 5 6 7 8 9 10 Bridge Output Current - AAVG Peak Half Sine-Wave Forward Current - A Figure 13. Maximum Allowable Case Temperature vs. Output Current (Input Bridge Rectifier) 110 At Any rated Load Condition 80% VRRM Applied After Surge 100 90 Initial TJ = 150°C 80 @60Hz 0.0083s @50Hz 0.0100s 70 60 50 40 30 20 1 10 100 Half Cycle Current Pulse - n Figure 14. Input Bridge Maximum Non-Repetitive Surge Current www.irf.com 17 IRAM136-0461G Figure 11. Switching Parameter Definitions VCE IC IC VCE 90% IC 50% HIN /LIN 90% IC 50% VCE HIN /LIN HIN /LIN 50% HIN /LIN 50% VCE 10% IC 10% IC tr tf TON TOFF Figure 11a. Input to Output propagation turn-on delay time. Figure 11b. Input to Output propagation turn-off delay time. IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery. 18 www.irf.com IRAM136-0461G V+ 5V Ho IN Hin1,2,3 IC Driver U,V,W IO Lo Lin1,2,3 Figure CT1. Switching Loss Circuit V+ Ho Hin1,2,3 1k 10k VCC Lin1,2,3 IN IC Driver 5VZD U,V,W IO Lo IN Io Figure CT2. S.C.SOA Circuit V+ Ho Hin1,2,3 1k IN 10k VCC IC Driver 5VZD Lin1,2,3 IN U,V,W IO Lo Io Figure CT3. R.B.SOA Circuit www.irf.com 19 IRAM136-0461G Package Outline note 3 note 2 62 3 A 56 11.4 REF. Ø3.4 TYP. B 11.4 21.8 22.3 027-E2D24 20.4 IRAM136-0461G 23 1 note 1 2 TYP. 0.70 0.45 TYP SCALE:4/1 2.5 INT. 22 PITCHES = 44 11.4 REF 0.80 TYP 0.55 46.2 50 2 TYP 5 4.7 INT. C R0.6 TYP. 5.0 3.2 CONVEX ONLY 0.10 C Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking For mounting instruction, see AN1049 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 2006/12 20 9.0 REF. Ø0.20 A B www.irf.com