PHILIPS PBHV8115T

PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 01 — 4 February 2008
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115T.
1.2 Features
n
n
n
n
n
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
1.3 Applications
n
n
n
n
n
n
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch mode power supply
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
150
V
IC
collector current
-
-
1
A
hFE
DC current gain
100
-
-
VCE = 10 V; IC = 50 mA
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
emitter
3
collector
Simplified outline
Symbol
3
3
1
1
2
2
sym021
3. Ordering information
Table 3.
Ordering information
Type number
PBHV8115T
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PBHV8115T
W6*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBHV8115T_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 4 February 2008
2 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
400
V
VCEO
collector-emitter voltage
open base
-
150
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
1
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
2
A
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
-
300
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
006aab150
400
Ptot
(mW)
300
200
100
0
−75
−25
25
75
125
175
Tamb (°C)
FR4 PCB, standard footprint
Fig 1. Power derating curve SOT23 (TO-236AB)
PBHV8115T_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 4 February 2008
3 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Rth(j-a)
thermal resistance from junction to
ambient
Rth(j-sp)
thermal resistance from junction to
solder point
[1]
[1]
in free air
Min
Typ
Max
Unit
-
-
417
K/W
-
-
70
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab151
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
102
0.33
0.2
0.1
0.05
10
1
0.02
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB)
PBHV8115T_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 4 February 2008
4 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
ICBO
Conditions
Min
Typ
Max
Unit
collector-base cut-off VCB = 120 V; IE = 0 A
current
VCB = 120 V; IE = 0 A;
Tj = 150 °C
-
-
100
nA
-
-
10
µA
ICES
collector-emitter
cut-off current
VCE = 120 V; VBE = 0 V
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 4 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 10 V
100
250
-
IC = 50 mA
IC = 100 mA
VCEsat
collector-emitter
saturation voltage
100
250
-
IC = 0.5 A
[1]
50
160
-
IC = 1 A
[1]
10
30
-
-
40
60
mV
IC = 100 mA; IB = 10 mA
IC = 100 mA; IB = 20 mA
-
33
50
mV
IC = 1 A; IB = 200 mA
[1]
-
225
350
mV
[1]
-
1.1
1.2
V
-
30
-
MHz
VBEsat
base-emitter
saturation voltage
IC = 1 A; IB = 200 mA
fT
transition frequency
VCE = 10 V; IE = 10 mA;
f = 100 MHz
Cc
collector capacitance VCB = 20 V; IE = ie = 0 A;
f = 1 MHz
-
5.7
-
pF
Ce
emitter capacitance
VEB = 0.5 V;
IC = ic = 0 A; f = 1 MHz
-
150
-
pF
td
delay time
-
7
-
ns
tr
rise time
-
565
-
ns
ton
turn-on time
VCC = 6 V; IC = 0.5 A;
IBon = 0.1 A;
IBoff = −0.1 A
-
572
-
ns
ts
storage time
-
1530
-
ns
tf
fall time
-
700
-
ns
toff
turn-off time
-
2230
-
ns
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBHV8115T_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 4 February 2008
5 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
006aab158
500
006aab159
2.0
IB (mA) = 30
IC
(A)
hFE
400
1.6
27
24
21
18
15
12
1.2
9
(1)
300
(2)
6
200
0.8
3
(3)
100
0
10−1
0.4
1
10
102
103
104
IC (mA)
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
006aab160
1.2
VBE
(V)
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
006aab161
1.3
VBEsat
(V)
(1)
0.8
0.9
(2)
(2)
(3)
(3)
0.4
0
10−1
(1)
0.5
1
10
102
103
104
IC (mA)
VCE = 10 V
0.1
10−1
1
102
103
104
IC (mA)
IC/IB = 5
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Base-emitter saturation voltage as a function of
collector current; typical values
PBHV8115T_1
Product data sheet
10
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 4 February 2008
6 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
006aab162
1
006aab163
10
VCEsat
(V)
VCEsat
(V)
1
10−1
(1)
(2)
10−1
(1)
(2)
10−2
(3)
(3)
10−2
10−3
10−1
1
10
102
103
104
IC (mA)
10−3
10−1
(1) Tamb = 100 °C
(1) IC/IB = 20
(2) Tamb = 25 °C
(2) IC/IB = 10
(3) Tamb = −55 °C
(3) IC/IB = 5
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab164
103
102
103
104
IC (mA)
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
RCEsat
(Ω)
102
102
10
10
1
(3)
(3)
1
10
(1)
(2)
1
(1)
(2)
102
006aab165
103
RCEsat
(Ω)
103
104
IC (mA)
10−1
10−1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
IC/IB = 5
(1) Tamb = 100 °C
(1) IC/IB = 20
(2) Tamb = 25 °C
(2) IC/IB = 10
(3) Tamb = −55 °C
(3) IC/IB = 5
Fig 9. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV8115T_1
Product data sheet
10
Tamb = 25 °C
IC/IB = 5
10−1
10−1
1
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 4 February 2008
7 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
8. Test information
VBB
RB
oscilloscope
VCC
RC
Vo
(probe)
(probe)
450 Ω
450 Ω
oscilloscope
R2
VI
DUT
R1
mlb826
Fig 11. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
0.15
0.09
04-11-04
Fig 12. Package outline SOT23 (TO-236AB)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PBHV8115T
[1]
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
3000
10000
-215
-235
For further information and the availability of packing methods, see Section 14.
PBHV8115T_1
Product data sheet
Packing quantity
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 4 February 2008
8 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
11. Soldering
2.90
2.50
0.85
2
1
solder lands
1.30
3.00
2.70
0.85
solder resist
solder paste
3
occupied area
0.60
(3x)
Dimensions in mm
0.50 (3x)
0.60 (3x)
1.00
3.30
sot023
Fig 13. Reflow soldering footprint SOT23 (TO-236AB)
3.40
1.20 (2x)
solder lands
solder resist
occupied area
2
1
4.60 4.00 1.20
3
Dimensions in mm
2.80
preferred transport direction during soldering
4.50
sot023
Fig 14. Wave soldering footprint SOT23 (TO-236AB)
PBHV8115T_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 4 February 2008
9 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBHV8115T_1
20080204
Product data sheet
-
-
PBHV8115T_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 4 February 2008
10 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PBHV8115T_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 4 February 2008
11 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 4 February 2008
Document identifier: PBHV8115T_1