Target Data 05/01 25MT060WF "FULL-BRIDGE" IGBT MTP Warp Speed IGBT Features VCES = 600V • Gen. 4 Warp Speed IGBT Technology • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermystor Inside • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Operation VCE(on) typ. = 2.2V @ VGE = 15V, IC = 25A TC = 25°C Benefits • Optimized for Welding, UPS and SMPS Applications • Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode • Low EMI, requires Less Snubbing • Direct Mounting to Heatsink • PCB Solderable Terminals • Very Low Junction-to-Case Thermal Resistance Absolute Maximum Ratings Parameters V CES Collector-to-Emitter Voltage IC Continuos Collector Current ICM Pulsed Collector Current ILM Peak Switching Current I Diode Continuous Forward Current @ TC = 25°C @ TC = 100°C F Max Units 600 V 50 A 25 200 200 @ TC = 100°C 25 IFM Peak Diode Forward Current 200 VGE Gate-to-Emitter Voltage ± 20 V ISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation @ TC = 25°C 900 @ TC = 100°C 400 V W 1 25MT060WF Target Data 05/01 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V(BR)CES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage 600 V GE(th) ∆V GE(th) / ∆T J g fe Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance I CES Collector-to-Emiter Leaking Current V FM Diode Forward Voltage Drop I GES Gate-to-Emitter Leakage Current V 1.85 1.7 3 6 40 V GE = 0V, I C = 250µA V GE = 15V, I C = 25A V GE = 15V, I C = 25A, T J = 150°C I C = 250µA mV/°C V GE = V CE , I C = 500µA S 250 5000 1.3 1.2 V CE = 100V, I C = 25A µA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 150°C I F = 25A, V GE = 0V I F = 25A, V GE = 0V, T J = 150°C V GE = ± 20V V ± 100 nA Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Qge Qgc Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) 180 25 63 nC IC = 25A VCC = 400V VGE = 15V Eon Eoff(1) Ets(1) Cies Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance 950 320 1270 4000 µJ Rg1 = Rg2 = 5Ω , IC = 25A VCC = 480V VGE = ±15V VGE = 0V Coes Cres trr Irr Qrr di(rec)M/dt Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Diode PeakRate of Fall of Recovery During tb 260 68 50 4.5 112 250 pF ns A nC A/µs VCC = 30V f = 1.0 MHz VR = 200V, IC = 25A di/dt = 200A/µs Thermal- Mechanical Specifications Parameters Min Max Units TJ Operating Junction Temperature Range - 40 Typ 150 °C TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case IGBT RthCS Case-to-Sink Module 0.7 Diode °C/ W 0.9 0.06 (Heatsink Compound Thermal Conductivity = 1 W/mK) Weight 2 66 g 25MT060WF Target Data 05/01 Outline Table Dimensions in millimeters Data and specifications subject to change without notice. This product has been designed for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 05/01 3