PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701F Package H-37265-2 Features Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing 35 -30 • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 42 dBm - Linear Gain = 16.5 dB - Efficiency = 27.0% - Intermodulation distortion = –37 dBc - Adjacent channel power = –42.5 dBc • Typical CW performance, 2170 MHz, 30 V - Output power at P–1dB = 80 W - Efficiency = 58% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 70 W (CW) output power 30 -35 Efficiency -40 25 IM3 20 -45 ACPR -50 15 -55 10 -60 5 30 32 34 36 38 40 42 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) PTFA210701E Package H-36265-2 44 Average Output Power (dBm) RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 550 mA, POUT = 18 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 15.5 16.5 — dB Drain Efficiency ηD 28 29 — % Intermodulation Distortion IMD — –36.5 –35.5 dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 02.1, 2009-02-18 PTFA210701E PTFA210701F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 550 mA, POUT = 70 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 16.5 — dB Drain Efficiency ηD — 41 — % Intermodulation Distortion IMD — –29.5 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.125 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 30 V, IDQ = 550 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 190 W 1.09 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 70 W CW) RθJC 0.92 °C/W Ordering Information Type and Version Package Type Package Description Marking PTFA210701E V4 H-36265-2 Thermally-enhanced slotted flange, single-ended PTFA210701E PTFA210701F V4 H-37265-2 Thermally-enhanced earless flange, single-ended PTFA210701F *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 02.1, 2009-02-18 PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Broadband Performance Two-tone Drive-up at Optimum IDQ VDD = 30 V, IDQ = 550 mA, POUT = 42.5 dBm VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz, tone spacing = 1 MHz Intermodulation Distortion (dBc) 10 35 Efficiency 0 -5 25 -10 Return Loss 20 -15 -20 15 -25 Gain -30 45 -30 40 Efficiency -35 IM3 -40 30 -45 25 IM5 -50 -55 20 15 IM7 -60 10 -65 -35 10 2070 2090 2110 2130 2150 2170 2190 2210 5 35 37 39 Frequency (MHz) 41 43 45 47 Two-carrier WCDMA at Selected Biases Power Sweep, CW Conditions VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ VDD = 30 V, IDQ = 550 mA, ƒ = 2170 MHz TCASE = 25°C TCASE = 90°C 18 -35 49 Output Power, PEP (dBm) -30 60 17 450 mA 50 650 mA -40 Gain (dB) 3rd Order IMD (dBc) 35 -45 -50 Gain 16 40 15 30 600 mA 14 550 mA -55 Efficiency 500 mA 13 -60 30 32 34 36 38 40 42 0 44 20 40 60 80 10 100 Output Power (W) Average Output Power (dBm) Data Sheet 20 Drain Efficiency (%) 30 Input Return Loss (dB) Gain (dB), Efficiency (%) 5 -25 Drain Efficiency (%) Typical Performance (data taken in a production test fixture) 3 of 10 Rev. 02.1, 2009-02-18 PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier WCDMA Drive-up Voltage Sweep -35 40 Efficiency -40 30 -45 20 -50 10 ACPR -55 3rd Order IMD (dBc) 50 32 34 36 38 40 42 50 -10 45 -15 40 Efficiency -20 25 -35 20 10 -45 23 44 25 -35 5th 7th -50 -55 15 20 25 30 35 0.15 A 0.44 A 1.02 0.73 A 1.01 1.10 A 1.00 2.20 A 0.99 3.30 A 4.41 A 0.98 5.51 A 0.97 0.96 0.95 -20 40 Tone Spacing (MHz) Data Sheet 33 Bias Voltage vs. Temperature Normalized Bias Voltage (V) Intermodulation Distortion (dBc) -30 10 31 1.03 3rd order 5 29 Voltage normalized to typical gate voltage, series show current -20 0 27 Supply Voltage (V) VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz, POUT = 48.5 dBm PEP -45 15 Gain Intermodulation Distortion Products vs. Tone Spacing -40 30 -30 Average Output Power (dBm) -25 35 IM3 Up -25 -40 0 30 -5 Gain (dB), Drain Efficiency (%) ACPR Up ACPR Low -30 IDQ = 550 mA, ƒ = 2140 MHz, tone spacing = 1 MHz, POUT (PEP) = 48.5 dBm Drain Efficiency (%) Adjacent Channel Power Ratio (dB) VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW 0 20 40 60 80 100 Case Temperature (°C) 4 of 10 Rev. 02.1, 2009-02-18 PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source Ω Frequency D Z Source Z Load G MHz R jX R jX 2060 19.94 1.61 4.50 –2.87 2110 20.94 0.77 4.20 –2.50 2140 21.41 0.11 4.02 –2.29 2170 21.83 –0.69 3.88 –2.07 2220 22.26 –2.09 3.66 –1.66 Z0 = 50 Ω 0 .1 2220 MHz 0.5 0.4 2060 MHz 0.3 Z Load 0.2 0.1 0.0 Z Source DTOW ARD LOA GT HS N E L VE - W AV E LE NGT H S T OW A S Z Load Ω 2220 MHz 2060 MHz 0.1 See next page for circuit information Data Sheet 5 of 10 Rev. 02.1, 2009-02-18 PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R1 1.2KV QQ1 LM7805 VDD C2 0.001µF C3 0.001µF R3 2K V R4 2K V R5 10 V + C4 10µF 35V R6 1K V R8 5.1K V C5 R7 0.1µF 1K V C6 1µF C7 0.01µF C8 10pF C12 10pF l8 R9 10 V C10 10pF RF_IN l1 l2 C13 0.02µF l3 l4 l5 l6 C14 1µF C15 100µF 50V C16 0.1µF l9 C22 0.5pF DUT C9 0.8pF VDD L1 l7 l11 C11 1.3pF l12 l13 C25 10pF l14 l10 l15 RF_OUT l16 C24 0.8pF C23 0.5pF a210701e_sch Q1 BCP56 L2 C17 10pF C18 0.02µF C19 1µF C20 100µF 50V C21 0.1µF Reference circuit schematic for ƒ = 2140 MHz Circuit Assembly Information DUT PCB PTFA210701E or PTFA210701F 0.76 mm [.030"] thick, εr = 3.48 LDMOS Transistor Rogers 4350 1 oz. copper Microstrip Electrical Characteristics at 2140 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7 l8 l9, l10 l11 l12 (taper) l13 (taper) l14 l15 l16 0.112 λ, 50.0 Ω 0.053 λ, 50.0 Ω 0.044 λ, 43.0 Ω 0.054 λ, 43.0 Ω 0.016 λ, 43.0 Ω 0.022 λ, 14.6 Ω 0.062 λ, 12.2 Ω 0.214λ, 61.0 Ω 0.211 λ, 53.0 Ω 0.042 λ, 6.5 Ω 0.043 λ, 6.5 Ω / 16.2 Ω 0.023 λ, 16.2 Ω / 50.0 Ω 0.010 λ, 53.0 Ω 0.130 λ, 53.0 Ω 0.116 λ, 53.0 Ω 9.53 x 1.78 4.52 x 1.78 3.73 x 2.18 4.57 x 2.18 1.37 x 2.18 1.73 x 8.76 4.88 x 10.82 18.36 x 1.22 17.91 x 1.57 3.25 x 21.84 3.30 x 21.84 / 7.80 1.88 x 7.80 / 1.57 0.89 x 1.57 11.07 x 1.57 9.88 x 1.57 0.375 x 0.070 0.178 x 0.070 0.147 x 0.086 0.180 x 0.086 0.054 x 0.086 0.068 x 0.345 0.192 x 0.426 0.723 x 0.048 0.705 x 0.062 0.128 x 0.860 0.130 x 0.860 / 0.307 0.074x 0.307 / 0.062 0.035 x 0.062 0.436 x 0.062 0.389 x 0.062 1Electrical characteristics are rounded. Data Sheet 6 of 10 Rev. 02.1, 2009-02-18 PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Reference Circuit (cont.) C5 R4 R5 C4 R6 R7 C6 C3 C1 LM R3 R1 R2 V DD QQ1 C2 C13 C12 Q1 L1 VDD C15 C7 R8 C8 C10 C16 C22 R9 RF_IN C9 C14 RF_OUT C23 C11 C24 C25 C21 C20 C17 VDD L2 C19 C18 RO4350_.030 RO4350_.030 A210701in_01 A210701out_01 a210701e_assy Reference circuit assembly diagram (not to scale)* Component Description C1, C2, C3 Capacitor, 0.001 µF C4 Tantalum capacitor, 10 µF, 35 V C5, C16, C21 Capacitor, 0.1 µF C6, C14, C19 Ceramic capacitor, 1 µF C7 Capacitor, 0.01 µF C8, C10, C12, C17, C25 Ceramic capacitor, 10 pF C9, C24 Ceramic capacitor, 0.8 pF C11 Ceramic capacitor, 1.3 pF C13, C18 Capacitor, 0.02 µF C15, C20 Electrolytic capacitor, 100 µF, 50 V C22, C23 Ceramic capacitor, 0.5pF L1, L2 Ferrite, 8.9 mm Q1 Transistor QQ1 Voltage regulator R1 Chip resistor 1.2K ohms R2 Chip resistor 1.3K ohms R3 Chip resistor 2K ohms R4 Potentiometer 2K ohms R5, R9 Chip resistor 10 ohms R6, R7 Chip resistor 1K ohms R8 Chip resistor 5.1K ohms Suggested Manufacturer P/N or Comment Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Digi-Key ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 445-1411-2-ND 200B 103 100B 100 100B 0R8 100B 1R3 200B 203 PCE3718CT-ND 100B 0R5 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND P5.1KECT-ND *Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 02.1, 2009-02-18 PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36265-2 2X 7.11 [.280] (45° X 2.03 [.080]) CL D 2.59±0.51 [.102±.020] S C L FLANGE 9.78 [.385] 15.34±0.51 [.604±.020] LID 10.16±0.25 [.400±.010] G 2x 7.11 [.280] 2X R1.60 [R.063] 4X R1.52 [R.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 3.56±0.38 [.140±.015 0.0381 [.0015] -A- 20.31 [.800] 2 0 0 7 -1 1 -1 6 _ h -3 6 + 3 7 2 6 5 _ P O s .v s d _ h -3 6 2 6 5 2 - 1.02 [.040] Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 8 of 10 Rev. 02.1, 2009-02-18 PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37265-2 (45° X 2.03 [.080]) CL 2.59±0.51 [.102±.020] D LID 10.16±0.25 [.400±.010] FLANGE 10.16 [.400] CL 15.34±.51 [.604±.020] 10.16 [.400] G 2X 7.11 [.280] FLANGE 4X R0.63 [R.025] MAX LID 10.16±0.25 [.400±.010] SPH 1.57 [.062] | 0.025 [.001]| -A3.56±.38 [.140±.015] S 10.16 [.400] 1.02 [.040] 0 7 1 1 1 9 _ h - 3 6 + 3 7 2 6 5 _ P O s _ h - 3 7 2 6 5 - 2 Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6 Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 10 Rev. 02.1, 2009-02-18 PTFA210701E/F Confidential, Limited Internal Distribution Revision History: 2009-02-18 2007-11-01, Data Sheet Previous Version: Data Sheet Page 1, 2, 8, 9 Subjects (major changes since last revision) Update product to V4, with new package technologies. 7 Fixed typing error We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-02-18 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 02.1, 2009-02-18