PHILIPS 74ABT10DB

INTEGRATED CIRCUITS
74ABT10
Triple 3-input NAND gate
Product specification
IC23 Data Handbook
1995 Sep 22
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74ABT10
QUICK REFERENCE DATA
SYMBOL
LOGIC SYMBOL
CONDITIONS
Tamb = 25°C;
GND = 0V
PARAMETER
TYPICAL
UNIT
3.3
2.2
ns
0.4
ns
tPLH
tPHL
Propagation
delay
An, Bn, Cn
to Yn
tOSLH
tOSHL
Output to
Output skew
CIN
Input
capacitance
VI = 0V or VCC
3
pF
ICC
Total supply
current
Outputs disabled;
VCC = 5.5V
50
µA
CL = 50pF;
VCC = 5V
1
2
13
3
4
5
9
A0
B0
C0
A1
B1
C1
A2
Y0
Y1
Y2
12
6
8
VCC = Pin 14
GND = Pin 7
B2
C2
SA00347
LOGIC SYMBOL (IEEE/IEC)
PIN CONFIGURATION
1
A0
1
14
VCC
B0
2
13
C0
A1
3
12
Y0
B1
4
11
C2
C1
5
10
B2
4
Y1
6
9
A2
5
GND
7
8
Y2
&
12
2
13
3
6
9
10
SA00346
8
11
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
1, 2, 3, 4, 5,
9, 10, 11, 13
An, Bn,
Cn
6, 8, 12
Yn
Data outputs
7
GND
Ground (0V)
14
VCC
Positive supply voltage
NAME AND FUNCTION
SV00059
Data inputs
FUNCTION TABLE
INPUTS
LOGIC DIAGRAM
1
A0
2
12
B1
C1
A2
B2
C2
Bn
L
L
OUTPUTS
Cn
Yn
L
L
H
L
H
H
L
H
L
H
L
H
H
H
H
L
L
H
H
L
H
H
3
H
H
L
H
4
H
H
H
L
Y0
C0
A1
An
13
B0
VCC = Pin 14
GND = Pin 7
11
10
6
Y1
NOTES:
H = High voltage level
L = Low voltage level
5
9
10
8
Y2
11
SA00348
ORDERING INFORMATION
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
DWG NUMBER
14-Pin Plastic DIP
PACKAGES
–40°C to +85°C
74ABT10 N
74ABT10 N
SOT27-1
14-Pin plastic SO
–40°C to +85°C
74ABT10 D
74ABT10 D
SOT108-1
14-Pin Plastic SSOP Type II
–40°C to +85°C
74ABT10 DB
74ABT10 DB
SOT337-1
14-Pin Plastic TSSOP Type I
–40°C to +85°C
74ABT10 PW
74ABT10PW DH
SOT402-1
1995 Sep 22
2
853-1810 15793
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74ABT10
ABSOLUTE MAXIMUM RATINGS1, 2
PARAMETER
SYMBOL
VCC
CONDITIONS
DC supply voltage
IIK
DC input diode current
VI
DC input voltage3
IOK
DC output diode current
RATING
UNIT
–0.5 to +7.0
V
–18
mA
VI < 0
–1.2 to +7.0
V
VO < 0
–50
mA
–0.5 to +5.5
V
40
mA
–65 to 150
°C
VOUT
DC output voltage3
output in Off or High state
IOUT
DC output current
output in Low state
Tstg
Storage temperature range
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
LIMITS
PARAMETER
DC supply voltage
UNIT
MIN
MAX
4.5
5.5
V
0
VCC
V
VI
Input voltage
VIH
High-level input voltage
VIL
Low-level input voltage
0.8
V
IOH
High-level output current
–15
mA
IOL
Low-level output current
2.0
∆t/∆v
Input transition rise or fall rate
Tamb
Operating free-air temperature range
V
20
mA
0
10
ns/V
–40
+85
°C
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Tamb = –40°C
to +85°C
Tamb = +25°C
MIN
TYP
MAX
–0.9
–1.2
MIN
UNIT
MAX
VIK
Input clamp voltage
VCC = 4.5V; IIK = –18mA
VOH
High-level output voltage
VCC = 4.5V; IOH = –15mA; VI = VIL or VIH
VOL
Low-level output voltage
VCC = 4.5V; IOL = 20mA; VI = VIL or VIH
0.35
0.5
0.5
V
Input leakage current
VCC = 5.5V; VI = GND or 5.5V
±0.01
±1.0
±1.0
µA
IOFF
Power-off leakage current
VCC = 0.0V; VO or VI ≤ 4.5V
±5.0
±100
±100
µA
ICEX
Output High leakage current
VCC = 5.5V; VO = 5.5V; VI = GND or VCC
5.0
50
50
µA
IO
Output current1
VCC = 5.5V; VO = 2.5V
–75
–180
–180
mA
ICC
Quiescent supply current
VCC = 5.5V; VI = GND or VCC
2
50
50
µA
Additional supply current per
input pin2
VCC = 5.5V; One data input at 3.4V, other
inputs at VCC or GND
0.25
500
500
µA
II
∆ICC
2.5
–50
2.9
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. For valid test results, data must not be loaded into the flip-flop or latch after applying the power.
1995 Sep 22
3
–1.2
2.5
–50
V
V
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74ABT10
AC CHARACTERISTICS
GND = 0V; tR = tF = 2.5ns; CL = 50pF, RL = 500Ω
LIMITS
SYMBOL
tPLH
tPHL
tOSHL
tOSLH1
Tamb = +25°C
VCC = +5.0V
WAVEFORM
PARAMETER
Propagation delay
An, Bn, Cn to Yn
1
Output to Output skew
An or Bn to Yn
2
Tamb = –40°C to +85°C
VCC = +5.0V ±0.5V
UNIT
MIN
TYP
MAX
MIN
MAX
1.0
1.0
3.3
2.2
4.7
3.3
1.0
1.0
5.3
3.7
ns
0.4
0.5
0.5
ns
NOTE:
1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same
device. The specification applies to any outputs switching in the the same direction, either HIGH–to-LOW (tOSHL) or LOW-to-HIGH (tOSLH);
parameter guaranteed by design.
AC WAVEFORMS
VM = 1.5V, VIN = GND to 3.0V
INPUT
An, Bn, Cn
VM
VM
tPHL
tPLH
OUTPUT
tPHL
MIN
VM
Yn
VM
tPLH
OUTPUT N
same part
MIN
SA00357
Waveform 1. Propagation Delay for Inverting Outputs
tPLH
tPHL
MAX
tOSLH
MAX
tOSHL
SA00381
Waveform 2. Common edge skew
TEST CIRCUIT AND WAVEFORMS
tW
90%
VCC
90%
VM
NEGATIVE
PULSE
AMP (V)
VM
10%
10%
0V
PULSE
GENERATOR
VIN
VOUT
tTHL (tF)
D.U.T.
RT
CL
tTLH (tR)
tTLH (tR)
RL
tTHL (tF)
90%
POSITIVE
PULSE
AMP (V)
90%
VM
VM
10%
Test Circuit for Outputs
10%
tW
0V
VM = 1.5V
Input Pulse Definition
DEFINITIONS
RL = Load resistor; see AC CHARACTERISTICS for value.
CL = Load capacitance includes jig and probe capacitance;
see AC CHARACTERISTICS for value.
RT = Termination resistance should be equal to ZOUT of
pulse generators.
INPUT PULSE REQUIREMENTS
FAMILY
74ABT
Amplitude
Rep. Rate
tW
tR
tF
3.0V
1MHz
500ns
2.5ns
2.5ns
SH00067
1995 Sep 22
4
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74ABT10
DIP14: plastic dual in-line package; 14 leads (300 mil)
1995 Sep 22
5
SOT27-1
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74ABT10
SO14: plastic small outline package; 14 leads; body width 3.9 mm
1995 Sep 22
6
SOT108-1
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74ABT10
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm
1995 Sep 22
7
SOT337-1
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74ABT10
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm
1995 Sep 22
8
SOT402-1
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74ABT10
DEFINITIONS
Data Sheet Identification
Product Status
Definition
Objective Specification
Formative or in Design
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Preliminary Specification
Preproduction Product
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Product Specification
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Philips Semiconductors and Philips Electronics North America Corporation
register eligible circuits under the Semiconductor Chip Protection Act.
 Copyright Philips Electronics North America Corporation 1995
All rights reserved. Printed in U.S.A.
(print code)
Document order number:
Date of release: July 1994
9397-750-04851