IRF 50MT060ULSTA

Bulletin I27191 02/05
50MT060ULSA
50MT060ULSTA
"LOW SIDE CHOPPER" IGBT MTP
Ultrafast Speed IGBT
Features
• Gen. 4 Ultrafast Speed IGBT Technology
• HEXFRED TM Diode with UltraSoft
Reverse Recovery
• Very Low Conduction and Switching
Losses
• Optional SMD Thermistor (NTC)
• Al2O3 DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved ( file E78996 )
VCES = 600V
IC = 100A,
TC = 25°C
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
MMTP
Absolute Maximum Ratings
Parameters
VCES
Collector-to-Emitter Voltage
IC
Continuos Collector Current
ICM
Pulsed Collector Current
ILM
Peak Switching Current
I
Diode Continuous Forward Current
F
Max
Units
600
V
@ TC = 25°C
100
A
@ TC = 122°C
50
200
200
@ TC = 100°C
48
IFM
Peak Diode Forward Current
200
VGE
Gate-to-Emitter Voltage
± 20
VISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
PD
Maximum Power
IGBT
Dissipation
Diode
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@ TC = 25°C
445
@ TC = 100°C
175
@ TC = 25°C
205
@ TC = 100°C
83
V
W
1
50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V CE(on)
Collector-to-Emitter Voltage
V GE(th)
Gate Threshold Voltage
B VR
Diode Reverse Breakdown Voltage
V
2.31
V GE = 15V, I C = 50A
1.96
1.88
2.55
2.24
V GE = 15V, I C = 100A
V GE = 15V, I C = 100A, T J = 150°C
3
6
I C = 0.5mA
600
∆V GE(th) / Temperature Coeff. of
∆T J
Threshold Voltage
I R = 200µA
- 13
22
V GE = 0V, I C = 250µA
1.69
mV/°C V CE = V GE , I C = 500µA
g fe
Forward Transconductance
S
V CE = 50V, I C = 100A
I CES
Collector-to-Emiter Leaking Current
29
0.25
mA
V GE = 0V, V CE = 600V
V FM
Diode Forward Voltage Drop
6
1.82
V
V GE = 0V, V CE = 600V, T J = 150°C
I F = 100A, V GE = 0V
I GES
Gate-to-Emitter Leakage Current
nA
V GE = ± 20V
1.64
1.56
1.74
± 250
I F = 100A, V GE = 0V, T J = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg
Total Gate Charge (turn-on)
370
555
Qge
Qgc
Eon
Eoff
Ets
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
64
163
0.7
1.7
2.4
96
245
1.2
2.6
3.8
nC
IC = 100A
mJ
Eon
Turn-On Switching Loss
1.1
1.7
mJ
Eoff
Turn-Off Switching Loss
2.5
3.8
Rg = 5Ω, T J = 125°C
Ets
Total Switching Loss
3.6
5.5
Energy losses include tail and diode reverse
Cies
Input Capacitance
9800 14700
Coes
Output Capacitance
602
903
Cres
Ct
Reverse Transfer Capacitance
Diode Junction Capacitance
121
118
182
177
trr
Diode Reverse Recovery Time
99
150
ns
VCC = 480V, IC = 50A
Irr
Diode Peak Reverse Current
6.5
9.8
A
di/dt = 200A/µs
320
236
735
VCC = 480V
VGE = 15V
IC = 50A, VCC = 480V, VGE = 15V,
Rg = 5Ω
Energy losses include tail and diode reverse
recovery
IC = 50A, VCC = 480V, VGE = 15V
recovery
Qrr
Diode Recovery Charge
di(rec)M/dt Diode PeakRate of Fall of Recovery
During tb
2
VGE = 0V
pF
VCC = 30V
f = 1.0 MHz
Vr = 600V, f = 1.0 MHz
nC Rg = 5Ω
A/µs
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Thermistor Specifications (50MT060ULSTA only)
Parameters
Min Typ
R0
(1)
Resistance
β
(1) (2)
Sensitivity index of the thermistor
material
(1) T0,T1 are thermistor's temperatures
(2)
R0
R1
Max Units Test Conditions
30
kΩ
T0 = 25°C
4000
K
T0 = 25°C
T1 = 85°C
= exp
[ β ( 1T
1
0
)],
T1
Temperatures in kelvin
Thermal- Mechanical Specifications
Parameters
Min
Typ
Max
Units
°C
TJ
Operating Junction Temperature Range
- 40
150
TSTG
Storage Temperature Range
- 40
125
RthJC
Junction-to-Case
RthCS
Case-to-Sink
IGBT
0.28
Diode
0.6
Module
°C/ W
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
T
Wt
Mounting torque to heatsink
Weight
(3)
3 ± 10%
66
Nm
g
(3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
100
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Power Dissipation = 92W
Load Current ( A )
75
50
25
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
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3
50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
1000.0
TJ = 150C
IC, Collector-to-Emitter Current (Α)
IC , Collector-to-Emitter Current (A)
100
TJ = 25C
10
Vge = 15V
380µs Pulse Width
T J = 150°C
100.0
T J = 25°C
10.0
VCC = 50V
20µs PULSE WIDTH
1.0
1
0.6
1.0
1.4
1.8
5.0
2.2
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
6.5
2
VCE , Collector-to Emitter Voltage (V)
IC Maximum DC Collector Current (A)
6.0
Fig. 3 - Typical Transfer Characteristics
120
100
80
60
40
20
IC = 100A
1.75
IC = 50A
1.5
IC = 25A
1.25
1
0
25
50
75
100
125
150
TC Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
4
5.5
VGE, Gate-to-Emitter Voltage (V)
20
40
60
80
100
120
140
160
T J , Junction Temperature (°C)
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τJ
0.001
R1
R1
τJ
τ1
R2
R2
τ2
τ1
R3
R3
τC
τ
τ3
τ2
τ3
Ci= τi/Ri
Ci i/Ri
τi (sec)
0.000968
0.130
0.019621
0.100
0.051755
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
Ri (°C/W)
0.060
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.01
0.02
τJ
R1
R1
τJ
τ1
R2
R2
τ2
τ1
Ci= τi/Ri
Ci i/Ri
0.001
R3
R3
τC
τ
τ2
τ3
τ3
Ri (°C/W)
0.200
τi (sec)
0.000993
0.296
0.038934
0.102
0.52648
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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5
50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
14000
VGE , Gate-to-Emitter Voltage (V)
12000
C
=C +C
oes
ce
gc
Cies
C, Capacitance (pF)
20.0
VGE = 0V, f = 1 MHZ
C
= C +C , C SHORTED
ies
ge
gc ce
Cres = Cgc
10000
8000
Coes
6000
4000
2000
Cres
VCE = 480V
16.0
12.0
8.0
4.0
0.0
0
1
10
100
0
1000
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
200
300
400
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
5.0
100
VCC = 480V
VGE = 15V
RG = 5.0Ω
VGE = 15V
Total Switching Losses (mJ)
EOFF
TJ = 25°C
I C = 100A
4.0
Switching Losses (mJ)
100
Q G, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
3.0
2.0
EON
1.0
VCC = 480V
I C = 100A
10
I C = 50A
I C = 25A
1
0.1
0.0
0
10
20
R G , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
6
IC= 100A
30
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
1000
12
Total Switching Losses (mJ)
10
IC, Collector-to-Emitter Current (A)
RG = 5.0Ω
TJ = 125°C
VGE = 15V
VCC = 480V
8
6
4
2
VGE = 20V
T J = 125°
100
10
SAFE OPERATING AREA
1
0
20
40
60
80
1
100
10
100
1000
VCE, Collector-to-Emitter Voltage (V)
IC, Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F ( A )
100
TJ = 150°C
TJ = 125°C
10
TJ = 25°C
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - VF ( V )
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
40
320
VR = 480V
TJ = 125°C
TJ = 25°C
280
IF = 100A
30
IF = 50A
IF = 100A
IF = 25A
IF = 50A
IF = 25A
200
IRRM - (A)
trr - (ns)
240
160
20
120
10
VR = 480V
80
TJ = 125°C
TJ = 25°C
40
0
100
200
300
400
500
600
100
200
dif / dt - (A / µs)
300
500
600
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
2000
10000
VR = 480V
TJ = 125°C
IF = 100A
IF = 50A
1600
400
dif / dt - (A / µs)
TJ = 25°C
IF = 100A
IF = 25A
di(rec)M/dt - (A/µs)
IF = 50A
IF = 25A
Q rr - (nC)
1200
800
1000
400
VR = 480V
TJ = 125°C
TJ = 25°C
0
100
200
300
400
500
600
dif / dt - (A / µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
8
100
100
200
300
400
500
600
dif / dt - (A / µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Outline Table
Circuit Diagram
Resistance in ohms
Dimensions in millimetres
Note: unused terminals are not assembled in the package
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9
50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Ordering Information Table
Device Code
50
MT 060
1
2
3
U
LS
T
A
4
5
6
7
1
-
Current Rating (50 = 50A)
2
-
Essential Part Number
3
-
Voltage rating (060 = 600V)
4
-
Speed/ Type
5
-
Circuit Configuration (LS = Low Side Chopper)
6
-
Special Option
(U
= Ultra Fast IGBT)
! none = no special option
!T
7
-
= Thermistor
A = Al2O3 DBC Substrate
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 02/05
10
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