DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS5350S 50 V low VCEsat PNP transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350S FEATURES QUICK REFERENCE DATA • High power dissipation (830 mW) SYMBOL • Ultra low collector-emitter saturation voltage VCEO collector-emitter voltage −50 V IC collector current (DC) −3 A • High current switching ICM peak collector current −5 A • Improved device reliability due to reduced heat generation RCEsat equivalent on-resistance <150 mΩ • 3 A continuous current PARAMETER MAX. UNIT PINNING APPLICATIONS PIN • Medium power switching and muting • Linear regulators • DC/DC convertor DESCRIPTION 1 base 2 collector 3 emitter • Supply line switching circuits • Battery management applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). handbook, halfpage1 2 2 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT54 plastic package. NPN complement: PBSS4350S. 3 MAM285 MARKING TYPE NUMBER MARKING CODE PBSS5350S Fig.1 Simplified outline (SOT54) and symbol. S5350S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −60 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −3 A ICM peak collector current − −5 A IBM peak base current − −1 A Ptot total power dissipation − 830 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2001 Nov 19 2 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350S THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air; note 1 VALUE UNIT 150 K/W Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector-base cut-off current VCB = −50 V; IE = 0 MIN. TYP. MAX. − − −100 nA VCB = −50 V; IE = 0; Tj = 150 °C − − −50 µA nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 hFE DC current gain VCE = −2 V; IC = −500 mA 200 − − VCE = −2 V; IC = −1 A; note 1 200 − − VCE = −2 V; IC = −2 A; note 1 100 − − VCEsat collector-emitter saturation voltage UNIT IC = −500 mA; IB = −50 mA − − −100 mV IC = −1 A; IB = −50 mA − − −180 mV IC = −2 A; IB = −200 mA; note 1 − − −300 mV RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − 120 <150 mΩ VBEsat base-emitter saturation voltage IC = −2 A; IB = −200 mA; note 1 − − −1.2 V VBE base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1 − − −1.1 V fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 40 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2001 Nov 19 3 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350S MLD751 1000 MLD752 −1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) −0.8 (1) 600 (2) (2) 400 −0.4 (3) (3) 200 0 −10 −1 −1 −10 −102 0 −10 −1 −103 −104 I C (mA) −1 VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD753 −103 handbook, halfpage −10 −102 −103 −104 I C (mA) Base-emitter voltage as a function of collector current; typical values. MLD754 −1.2 handbook, halfpage VBEsat (V) VCEsat (mV) −1 (1) −0.8 −102 (1) (2) −0.6 (2) (3) (3) −0.4 −10 −0.2 −1 −10 −1 −1 −10 −102 0 −10 −1 −103 −104 I C (mA) −1 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Nov 19 4 −10 −102 −103 −104 I C (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350S MLD755 −1000 IC handbook, halfpage (3) −800 (1) (2) (3) IC (2) (mA) MLD756 −5 (1) handbook, halfpage (4) (5) (6) (7) (A) −4 (4) (8) (5) (6) −600 (9) −3 (7) (10) (8) −400 −2 (9) (10) (11) −200 −1 (12) 0 −0.4 0 −0.8 −1.2 0 −1.6 −2 VCE (V) IB = −3.96 nA. IB = −3.63 nA. IB = −3.30 nA. IB = −2.97 nA. Fig.6 (5) (6) (7) (8) IB = −2.64 nA. IB = −2.31 nA. IB = −1.98 nA. IB = −1.65 nA. (9) IB = −1.32 nA. (10) IB = −0.99 nA. (11) IB = −0.66 nA. (12) IB = −0.33 nA. (1) (2) (3) (4) Collector current as a function of collector-emitter voltage; typical values. RCEsat (Ω) 102 10 1 (1) (2) (3) 10 −1 −1 −10 −102 −103 −104 I C (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2001 Nov 19 IB = −250 mA. IB = −225 mA. IB = −200 mA. IB = −175 mA. Fig.7 MLD757 103 handbook, halfpage 10 −2 −10 −1 −0.8 −1.2 −1.6 −2 VCE (V) Tamb = 25 °C. Tamb = 25 °C. (1) (2) (3) (4) −0.4 0 5 (5) (6) (7) (8) IB = −150 mA. IB = −125 mA. IB = −100 mA. IB = −75 mA. (9) IB = −50 mA. (10) IB = −25 mA. Collector current as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350S PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2001 Nov 19 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350S DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 19 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Nov 19 Document order number: 9397 750 08946