PHILIPS PBSS5350S

DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D186
PBSS5350S
50 V low VCEsat PNP transistor
Product specification
2001 Nov 19
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350S
FEATURES
QUICK REFERENCE DATA
• High power dissipation (830 mW)
SYMBOL
• Ultra low collector-emitter saturation voltage
VCEO
collector-emitter voltage
−50
V
IC
collector current (DC)
−3
A
• High current switching
ICM
peak collector current
−5
A
• Improved device reliability due to reduced heat
generation
RCEsat
equivalent on-resistance
<150
mΩ
• 3 A continuous current
PARAMETER
MAX.
UNIT
PINNING
APPLICATIONS
PIN
• Medium power switching and muting
• Linear regulators
• DC/DC convertor
DESCRIPTION
1
base
2
collector
3
emitter
• Supply line switching circuits
• Battery management applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
handbook, halfpage1
2
2
3
1
DESCRIPTION
PNP low VCEsat transistor in a SOT54 plastic package.
NPN complement: PBSS4350S.
3
MAM285
MARKING
TYPE NUMBER
MARKING CODE
PBSS5350S
Fig.1
Simplified outline (SOT54) and symbol.
S5350S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−60
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
−
−3
A
ICM
peak collector current
−
−5
A
IBM
peak base current
−
−1
A
Ptot
total power dissipation
−
830
mW
Tstg
storage temperature
Tamb ≤ 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2001 Nov 19
2
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350S
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to
ambient
in free air; note 1
VALUE
UNIT
150
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
collector-base cut-off current VCB = −50 V; IE = 0
MIN.
TYP.
MAX.
−
−
−100
nA
VCB = −50 V; IE = 0; Tj = 150 °C
−
−
−50
µA
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−100
hFE
DC current gain
VCE = −2 V; IC = −500 mA
200
−
−
VCE = −2 V; IC = −1 A; note 1
200
−
−
VCE = −2 V; IC = −2 A; note 1
100
−
−
VCEsat
collector-emitter saturation
voltage
UNIT
IC = −500 mA; IB = −50 mA
−
−
−100
mV
IC = −1 A; IB = −50 mA
−
−
−180
mV
IC = −2 A; IB = −200 mA; note 1
−
−
−300
mV
RCEsat
equivalent on-resistance
IC = −2 A; IB = −200 mA; note 1
−
120
<150
mΩ
VBEsat
base-emitter saturation
voltage
IC = −2 A; IB = −200 mA; note 1
−
−
−1.2
V
VBE
base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1
−
−
−1.1
V
fT
transition frequency
IC = −100 mA; VCE = −5 V; f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
40
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Nov 19
3
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350S
MLD751
1000
MLD752
−1.2
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
800
(1)
−0.8
(1)
600
(2)
(2)
400
−0.4
(3)
(3)
200
0
−10 −1
−1
−10
−102
0
−10 −1
−103
−104
I C (mA)
−1
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD753
−103
handbook, halfpage
−10
−102
−103
−104
I C (mA)
Base-emitter voltage as a function of
collector current; typical values.
MLD754
−1.2
handbook, halfpage
VBEsat
(V)
VCEsat
(mV)
−1
(1)
−0.8
−102
(1)
(2)
−0.6
(2)
(3)
(3)
−0.4
−10
−0.2
−1
−10 −1
−1
−10
−102
0
−10 −1
−103
−104
I C (mA)
−1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 19
4
−10
−102
−103
−104
I C (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350S
MLD755
−1000
IC
handbook, halfpage
(3)
−800
(1) (2) (3)
IC
(2)
(mA)
MLD756
−5
(1)
handbook, halfpage
(4)
(5)
(6)
(7)
(A)
−4
(4)
(8)
(5)
(6)
−600
(9)
−3
(7)
(10)
(8)
−400
−2
(9)
(10)
(11)
−200
−1
(12)
0
−0.4
0
−0.8
−1.2
0
−1.6
−2
VCE (V)
IB = −3.96 nA.
IB = −3.63 nA.
IB = −3.30 nA.
IB = −2.97 nA.
Fig.6
(5)
(6)
(7)
(8)
IB = −2.64 nA.
IB = −2.31 nA.
IB = −1.98 nA.
IB = −1.65 nA.
(9) IB = −1.32 nA.
(10) IB = −0.99 nA.
(11) IB = −0.66 nA.
(12) IB = −0.33 nA.
(1)
(2)
(3)
(4)
Collector current as a function of
collector-emitter voltage; typical values.
RCEsat
(Ω)
102
10
1
(1)
(2)
(3)
10 −1
−1
−10
−102
−103
−104
I C (mA)
IC/IB = 20.
(1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
Fig.8
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2001 Nov 19
IB = −250 mA.
IB = −225 mA.
IB = −200 mA.
IB = −175 mA.
Fig.7
MLD757
103
handbook, halfpage
10 −2
−10 −1
−0.8
−1.2
−1.6
−2
VCE (V)
Tamb = 25 °C.
Tamb = 25 °C.
(1)
(2)
(3)
(4)
−0.4
0
5
(5)
(6)
(7)
(8)
IB = −150 mA.
IB = −125 mA.
IB = −100 mA.
IB = −75 mA.
(9) IB = −50 mA.
(10) IB = −25 mA.
Collector current as a function of
collector-emitter voltage; typical values.
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350S
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2001 Nov 19
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
PBSS5350S
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 19
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2001
Nov 19
Document order number:
9397 750 08946