PD - 95243
IRF7530PbF
HEXFET® Power MOSFET
Trench Technology
Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
lAvailable in Tape & Reel
l Lead-Free
l
l
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
S1
G2
VDSS = 20V
RDS(on) = 0.030Ω
Top View
Description
New trench HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro8™
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
5.4
4.3
40
1.3
0.80
10
33
± 12
-55 to + 150
V
mW/°C
mJ
V
°C
Max.
Units
100
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
5/13/04
IRF7530PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.60
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.01
–––
–––
–––
–––
–––
–––
–––
–––
18
3.4
3.4
8.5
11
36
16
1310
180
150
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250uA
––– V/°C Reference to 25°C, ID = 1mA
0.030
VGS = 4.5V, ID = 5.4A
Ω
0.045
VGS = 2.5V, ID = 4.6A
1.2
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 5.4A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, TJ = 70°C
100
VGS = 12V
nA
-100
VGS = -12V
26
ID = 5.4A
5.1
nC
VDS = 16V
5.1
VGS = 4.5V
–––
VDD = 10V
–––
ID = 1.0A
ns
–––
RG = 6.0Ω
–––
RD = 10Ω
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
1.3
40
–––
–––
–––
–––
19
13
1.2
29
20
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.3A, VGS = 0V
TJ = 25°C, IF = 1.3A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 2.6mH
RG = 25Ω, IAS = 5.0A. (See Figure 10)
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IRF7530PbF
100
100
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
2.25V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
2.25V
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
V DS = 15V
20µs PULSE WIDTH
3.0
3.5
4.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
2.5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 150 °C
10
0.1
100
VDS , Drain-to-Source Voltage (V)
10
2.0
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
4.5
ID = 5.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7530PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1600
Ciss
1200
800
400
0
Coss
Crss
1
10
10
VGS , Gate-to-Source Voltage (V)
2000
VDS = 16V
VDS = 10V
VDS = 4V
8
6
4
2
0
100
ID = 5.4A
5.0A
0
15
20
25
30
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
10
TJ = 25 ° C
1
0.5
V GS = 0 V
1.0
1.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
5
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
2.0
10us
10
100us
1ms
1
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7530PbF
5.0
EAS , Single Pulse Avalanche Energy (mJ)
80
ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
TOP
BOTTOM
60
ID
2.2A
4.0A
5.0A
40
20
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
t1
0.01
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS ( on) , Drain-to-Source On Resistance ( Ω )
IRF7530PbF
RDS(on) , Drain-to -Source Voltage ( Ω )
0.04
0.03
Id = 5.0A
0.02
0.01
2.0
3.0
4.0
5.0
6.0
VGS, Gate -to -Source Voltage ( V )
Fig 12. On-Resistance Vs. Gate Voltage
6
7.0
0.10
0.08
0.06
0.04
VGS= 2.5V
VGS = 4.5V
0.02
0
10
20
30
ID, Drain Current (A)
Fig 13. On-Resistance Vs. Drain Current
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40
IRF7530PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
DIM
D
MILLIMETERS
MAX
MIN
.036
.044
0.91
1.11
A1
.004
.008
0.10
0.20
B
.010
.014
0.25
0.36
C
.005
.007
0.13
0.18
D
.116
.120
2.95
3.05
e
.0256 BASIC
0.65 BASIC
e1
.0128 BASIC
0.33 BASIC
E
.116
H
e
L
6X
θ
-B-
D D D D
8 7 6 5
3
INCHES
MIN
A
3
H
E
0.25 (.010)
-A-
M
A
M
D1 D1 D2 D2
8 7 6 5
8 7 6 5
SINGLE
DUAL
1 2 3 4
1 2 3 4
S S S G
S1 G1 S2 G2
1 2 3 4
MAX
.120
2.95
3.05
.188
.198
4.78
5.03
.016
.026
0.41
0.66
0°
6°
0°
6°
e1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
A
-CB
0.10 (.004)
A1
8X
0.08 (.003)
M
C A S
L
8X
B S
C
0.38
8X
( .015 )
8X
3.20
( .126 )
4.24
5.28
( .167 ) ( .208 )
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
0.65 6X
( .0256 )
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
LOT CODE (XX)
DATE CODE (YW) - See table below
Y = YEAR
W = WEEK
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
PART NUMBER
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
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YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
WW = (27-52) IF PRECEDED BY A LETT ER
W
YEAR
Y
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
7
IRF7530PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/04
8
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