PMD3001D MOSFET driver Rev. 02 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features n n n n n Low VCEsat Breakthrough In Small Signal (BISS) transistors in push-pull configuration Application-optimized pinout Space-saving solution Internal connections to minimize layout effort Reduces component count 1.3 Applications n MOSFET driver n Power bipolar transistor driver n Output current booster for operational amplifier 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit open base - - 40 V - - 1 A single pulse; tp ≤ 1 ms - - 2 A Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage IC collector current ICM peak collector current PMD3001D NXP Semiconductors MOSFET driver 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 base TR1, TR2 2 collector TR2 3 collector TR2 4 emitter TR1, TR2 5 collector TR1 6 collector TR1 6 5 4 1 2 3 Symbol 6 5 TR1 1 4 TR2 2 3 006aaa659 3. Ordering information Table 3. Ordering information Type number PMD3001D Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMD3001D 9F PMD3001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 2 of 16 PMD3001D NXP Semiconductors MOSFET driver 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 40 V IC collector current - 1 A ICM peak collector current - 2 A IBM peak base current - 0.3 A - 1 A [1] - 330 mW [2] - 400 mW [3] - 580 mW single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Per device Tamb ≤ 25 °C total power dissipation Ptot Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa784 600 (1) Ptot (mW) 400 (2) (3) 200 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PMD3001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 3 of 16 PMD3001D NXP Semiconductors MOSFET driver 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 380 K/W [2] - - 315 K/W [3] - - 215 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa785 103 duty cycle = Zth(j-a) (K/W) 102 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMD3001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 4 of 16 PMD3001D NXP Semiconductors MOSFET driver 006aaa786 103 duty cycle = Zth(j-a) (K/W) 102 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa787 103 duty cycle = Zth(j-a) (K/W) 102 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMD3001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 5 of 16 PMD3001D NXP Semiconductors MOSFET driver 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit collector-base cut-off VCB = 40 V; IE = 0 A current VCB = 40 V; IE = 0 A; Tj = 150 °C - - 100 nA - - 50 µA DC current gain 300 450 - Per NPN transistor ICBO hFE VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 200 mA VCEsat VBEsat VBE collector-emitter saturation voltage base-emitter saturation voltage 300 450 830 VCE = 5 V; IC = 500 mA [1] 300 400 - VCE = 5 V; IC = 1 A [1] 200 340 - VCE = 5 V; IC = 2 A [1] 75 120 - - 30 80 mV IC = 500 mA; IB = 50 mA IC = 100 mA; IB = 5 mA [1] - 100 120 mV IC = 1 A; IB = 100 mA [1] - 180 230 mV IC = 2 A; IB = 200 mA [1] - 360 440 mV - 0.75 0.9 V IC = 500 mA; IB = 50 mA IC = 100 mA; IB = 5 mA [1] - 0.9 1.1 V IC = 1 A; IB = 100 mA [1] - 1 1.2 V IC = 2 A; IB = 200 mA [1] - 1.1 1.3 V 700 800 1100 mV - - −100 nA - - −50 µA 300 450 - base-emitter voltage VCE = 5 V; IC = 1 A Per PNP transistor ICBO hFE collector-base cut-off VCB = −40 V; IE = 0 A current VCB = −40 V; IE = 0 A; Tj = 150 °C DC current gain VCE = −5 V; IC = −1 mA VCE = −5 V; IC = −200 mA VCEsat VBEsat VBE collector-emitter saturation voltage base-emitter saturation voltage 250 390 640 VCE = −5 V; IC = −500 mA [1] 215 290 - VCE = −5 V; IC = −1 A [1] 150 200 - VCE = −5 V; IC = −2 A [1] 50 85 - IC = −100 mA; IB = −5 mA - −40 −140 mV IC = −500 mA; IB = −50 mA [1] - −110 −170 mV IC = −1 A; IB = −100 mA [1] - −200 −310 mV IC = −2 A; IB = −200 mA [1] - −400 −500 mV IC = −100 mA; IB = −5 mA - −0.75 −0.9 V IC = −500 mA; IB = −50 mA [1] - −0.88 −1.1 V IC = −1 A; IB = −100 mA [1] - −0.95 −1.2 V IC = −2 A; IB = −200 mA [1] - −1.1 −1.3 V −700 −800 −1100 mV base-emitter voltage VCE = −5 V; IC = −1 A PMD3001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 6 of 16 PMD3001D NXP Semiconductors MOSFET driver Table 7. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit IC = 0.5 A; VI = 8 V - 3 - ns Per device td delay time tr rise time - 17 - ns ton turn-on time - 20 - ns ts storage time - 3 - ns tf fall time - 6 - ns toff turn-off time - 9 - ns [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02 PMD3001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 7 of 16 PMD3001D NXP Semiconductors MOSFET driver 006aaa788 800 hFE 006aaa793 2.4 IB (mA) = 17 15.3 13.6 11.9 10.2 8.5 IC (A) (1) 600 1.6 6.8 5.1 (2) 400 3.4 (3) 0.8 1.7 200 0 10−1 1 102 10 0 103 104 IC (mA) 0 1 2 3 4 5 VCE (V) Tamb = 25 °C VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 6. 006aaa789 1.0 TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values 006aaa792 1.2 VBEsat (V) VBE (V) (1) 1.0 (2) 0.8 0.8 (1) (2) 0.6 (3) 0.6 (3) 0.4 0.4 0.2 10−1 1 10 102 0.2 10−1 103 104 IC (mA) 1 VCE = 5 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 7. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values Fig 8. 102 103 104 IC (mA) TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values PMD3001D_2 Product data sheet 10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 8 of 16 PMD3001D NXP Semiconductors MOSFET driver 006aaa790 1 006aaa791 1 VCEsat (V) VCEsat (V) 10−1 (1) 10−1 (2) (1) (2) (3) 10−2 10−1 1 10 10−2 102 103 104 IC (mA) (3) 10−3 10−1 1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 103 104 IC (mA) Fig 10. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values PMD3001D_2 Product data sheet 102 Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C Fig 9. 10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 9 of 16 PMD3001D NXP Semiconductors MOSFET driver 006aaa794 800 hFE 006aaa799 −2.4 IB (mA) = −24 −21.6 −19.2 −16.8 −14.4 −12 IC (A) (1) 600 −1.6 −9.6 (2) −7.2 400 −4.8 −0.8 (3) −2.4 200 0 −1 −10 −102 −104 −103 0 0 −1 −2 −3 IC (mA) VCE = −5 V −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 11. TR2 (PNP): DC current gain as a function of collector current; typical values 006aaa795 −1.0 Fig 12. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values 006aaa798 −1.2 VBEsat (V) VBE (V) −0.8 (1) −1.0 (2) −0.8 (1) (2) −0.6 −0.6 (3) −0.4 (3) −0.4 −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −5 V −0.2 −10−1 −1 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 13. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 14. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values PMD3001D_2 Product data sheet −10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 10 of 16 PMD3001D NXP Semiconductors MOSFET driver 006aaa796 −1 006aaa797 −1 VCEsat (V) VCEsat (V) −10−1 (1) −10−1 (2) (1) (2) (3) (3) −10−2 −10−2 −10−1 −1 −10 −102 −10−3 −10−1 −103 −104 IC (mA) −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 15. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 16. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information VCC oscilloscope (probe) DUT 450 Ω TR1 VI VO (probe) 450 Ω R1 TR2 oscilloscope RE 006aaa858 IC = 0.5 A; VI = 8 V; R1 = 56 Ω; RE = 15 Ω Fig 17. Test circuit for switching times PMD3001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 11 of 16 PMD3001D NXP Semiconductors MOSFET driver 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 18. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMD3001D Package SOT457 Description 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping PMD3001D_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 12 of 16 PMD3001D NXP Semiconductors MOSFET driver 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 19. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 20. Wave soldering footprint SOT457 (SC-74) PMD3001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 13 of 16 PMD3001D NXP Semiconductors MOSFET driver 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMD3001D_2 20090828 Product data sheet - PMD3001D_1 Modifications: PMD3001D_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 20 “Wave soldering footprint SOT457 (SC-74)”: updated 20060926 Product data sheet PMD3001D_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 14 of 16 PMD3001D NXP Semiconductors MOSFET driver 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMD3001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 28 August 2009 15 of 16 PMD3001D NXP Semiconductors MOSFET driver 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 August 2009 Document identifier: PMD3001D_2