PHILIPS 74ABT544N

Philips Semiconductors Advanced BiCMOS Products
Product specification
Octal latched transceiver with dual enable,
inverting (3-State)
FEATURES
• Combines 74ABT245 and 74ABT373 type
functions in one device
• 8-bit octal transceiver with D-type latch
• Back-to-back registers for storage
• Separate controls for data flow in each
direction
• Output capability: +64mA/–32mA
• Live insertion/extraction permitted
• Power-up 3-State
• Power-up reset
• Latch-up protection exceeds 500mA per
Jedec JC40.2 Std 17
74ABT544
• ESD protection exceeds 2000 V per MIL
STD 883 Method 3015 and 200 V per
Machine Model
DESCRIPTION
The 74ABT544 high-performance BiCMOS
device combines low static and dynamic
power dissipation with high speed and high
output drive.
The 74ABT544 Octal Registered Transceiver
contains two sets of D-type latches for
temporary storage of data flowing in either
direction. Separate Latch Enable (LEAB,
LEBA) and Output Enable (OEAB, OEBA)
inputs are provided for each register to
permit independent control of data transfer in
either direction. The outputs are guaranteed
to sink 64mA.
FUNCTIONAL DESCRIPTION
The ’ABT544 contains two sets of eight
D–type latches, with separate control pins for
each set. Using data flow from A to B as an
example, when the A-to-B Enable (EAB)
input and the A-to-B Latch Enable (LEAB)
input are Low the A-to-B path is transparent.
A subsequent Low-to-High transition of the
LEAB signal puts the A data into the latches
where it is stored and the B outputs no longer
change with the A inputs. With EAB and
OEAB both Low, the 3-State B output buffers
are active and invert the data present at the
outputs of the A latches.
Control of data flow from B to A is similar, but
using the EBA, LEBA, and OEBA inputs.
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
ORDER CODE
DRAWING NUMBER
24-pin plastic DIP
–40°C to +85°C
74ABT544N
0410D
24-pin plastic SOL
–40°C to +85°C
74ABT544D
0173D
24-pin plastic SSOP Type II
–40°C to +85°C
74ABT544DB
1641A
PIN CONFIGURATION
LOGIC SYMBOL
LOGIC SYMBOL (IEEE/IEC)
2
23
LEBA
1
24 VCC
OEBA
2
23 EBA
A0 3
22 B0
A1 4
21 B1
5
20 B2
A2
6
19 B3
A4 7
18 B4
A5 8
17 B5
9
16 B6
A3
A6
A7 10
13
3
4
5
6
7
8
9
10
11
14
A0 A1 A2 A3 A4 A5 A6 A7
3
G1
1C5
2EN4 (BA)
G2
2C6
∇ 3
22
5D
11
EAB
23
EBA
OEAB
13
14
LEAB
OEBA
2
5
20
1
LEBA
6
19
B0 B1 B2 B3 B4 B5 B6 B7
7
18
8
17
9
16
10
15
4
5D
∇ 4
21
15 B7
EAB 11
14 LEAB
GND 12
13 OEAB
June 1, 1993
1
1EN3 (AB)
22 21 20 19 18 17 16 15
1
853–1610 09907
Philips Semiconductors Advanced BiCMOS Products
Product specification
Octal latched transceiver with dual enable,
inverting (3-State)
74ABT544
PIN DESCRIPTION
PIN NUMBER
SYMBOL
14, 1
LEAB / LEBA
FUNCTION
A to B / B to A Latch Enable input (active-Low)
11, 23
EAB / EBA
13, 2
OEAB / OEBA
A to B / B to A Enable input (active-Low)
3, 4, 5, 6,
7, 8, 9, 10
A0 – A7
Port A, 3-State outputs
22, 21, 20, 19,
18, 17, 16, 15
B0 – B7
Port B, 3-State outputs
12
GND
Ground (0V)
24
VCC
Positive supply voltage
A to B / B to A Output Enable input (active-Low)
QUICK REFERENCE DATA
SYMBOL
CONDITIONS
Tamb = 25°C; GND = 0V
PARAMETER
TYPICAL
UNIT
3.9
ns
tPLH
tPHL
Propagation delay
An to Bn or Bn to An
CL = 50pF; VCC = 5V
CIN
Input capacitance
VI = 0V or VCC
4
pF
CI/O
I/O capacitance
Outputs disabled;
VO = 0V or VCC
7
pF
ICCZ
Total supply current
Outputs disabled; VCC = 5.5V
110
µA
June 1, 1993
2
Philips Semiconductors Advanced BiCMOS Products
Product specification
Octal latched transceiver with dual enable,
inverting (3-State)
74ABT544
LOGIC DIAGRAM
DETAIL A
D
22
Q
B0
LE
A0
3
Q
D
LE
A1
A2
A3
A4
A5
A6
A7
OEBA
4
21
5
20
6
19
7
DETAIL A X 7
18
8
17
9
16
10
15
LEBA
11
1
FUNCTION TABLE
INPUTS
OUTPUTS
STATUS
OEXX
EXX
LEXX
An or Bn
An or Bn
H
X
X
X
Z
Disabled
X
H
X
X
Z
Disabled
L
L
↑
↑
L
L
h
l
Z
Z
Disabled + Latch
L
L
L
L
↑
↑
h
l
L
H
Latch + Display
L
L
L
L
L
L
H
L
L
H
Transparent
L
L
H
X
NC
Hold
High voltage level
High voltage level one set-up time prior to the Low-to-High clock transition
Low voltage level
Low voltage level one set-up time prior to the Low-to-High clock transition
Don’t care
Low-to-High clock transition
No change
High impedance or “off” state
June 1, 1993
B3
B4
B5
B6
B7
OEAB
23
14
H =
h =
L =
l =
X =
↑ =
NC=
Z =
B2
2
13
EBA
B1
3
EAB
LEAB
Philips Semiconductors Advanced BiCMOS Products
Product specification
Octal latched transceiver with dual enable,
inverting (3-State)
74ABT544
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
VCC
IIK
PARAMETER
CONDITIONS
RATING
UNIT
–0.5 to +7.0
V
–18
mA
–1.2 to +7.0
V
VO < 0
–50
mA
output in Off or High state
–0.5 to +5.5
V
output in Low state
128
mA
–65 to 150
°C
DC supply voltage
DC input diode current
VI < 0
voltage3
VI
DC input
IOK
DC output diode current
voltage3
VOUT
DC output
IOUT
DC output current
Tstg
Storage temperature range
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
PARAMETER
LIMITS
DC supply voltage
UNIT
Min
Max
4.5
5.5
V
0
VCC
V
VI
Input voltage
VIH
High-level input voltage
VIL
Low-level Input voltage
0.8
V
IOH
High-level output current
–32
mA
IOL
Low-level output current
64
mA
0
10
ns/V
–40
+85
°C
∆t/∆v
Input transition rise or fall rate
Tamb
Operating free-air temperature range
June 1, 1993
2.0
4
V
Philips Semiconductors Advanced BiCMOS Products
Product specification
Octal latched transceiver with dual enable,
inverting (3-State)
74ABT544
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Min
VIK
VOH
Input clamp voltage
High-level output voltage
Tamb = –40°C
to +85°C
Tamb = +25°C
VCC = 4.5V; IIK = –18mA
Typ
Max
–0.9
–1.2
Min
UNIT
Max
–1.2
V
VCC = 4.5V; IOH = –3mA; VI = VIL or VIH
2.5
3.2
2.5
V
VCC = 5.0V; IOH = –3mA; VI = VIL or VIH
3.0
3.7
3.0
V
VCC = 4.5V; IOH = –32mA; VI = VIL or VIH
2.0
2.3
2.0
V
VOL
Low-level output voltage
VCC = 4.5V; IOL = 64mA; VI = VIL or VIH
0.42
0.55
0.55
V
VRST
Power-up output low
voltage3
VCC = 5.5V; IO = 1mA; VI = GND or VCC
0.13
0.55
0.55
V
Input leakage
Control pins
VCC = 5.5V; VI = GND or 5.5V
±0.01
±1.0
±1.0
µA
current
Data pins
VCC = 5.5V; VI = GND or 5.5V
±5
±100
±100
µA
II
Power-off leakage current
VCC = 0.0V; VI or VO ≤ 4.5V
±5.0
±100
±100
µA
Power-up/down 3-State
output current4
VCC = 2.1V; VO = 0.5V; VI = GND or VCC;
VOE = Don’t care
±5.0
±50
±50
µA
IIH + IOZH
3-State output High current
VCC = 5.5V; VO = 2.7V; VI = VIL or VIH
5.0
50
50
µA
IIL + IOZL
3-State output Low current
VCC = 5.5V; VO = 0.5V; VI = VIL or VIH
–5.0
–50
–50
µA
ICEX
Output high leakage current
VCC = 5.5V; VO = 5.5V; VI = GND or VCC
5.0
50
50
µA
Output current1
VCC = 5.5V; VO = 2.5V
–65
–180
–180
mA
VCC = 5.5V; Outputs High, VI = GND or VCC
110
250
250
µA
VCC = 5.5V; Outputs Low, VI = GND or VCC
20
30
30
mA
VCC = 5.5V; Outputs 3–State;
VI = GND or VCC
110
250
250
µA
VCC = 5.5V; one input at 3.4V,
other inputs at VCC or GND; VCC = 5.5V
0.3
1.5
1.5
mA
IOFF
IPU/PD
IO
ICCH
ICCL
Quiescent supply current
ICCZ
∆ICC
Additional supply current per
input pin2
–50
–50
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. For valid test results, data must not be loaded into the flip–flops (or latches) after applying the power.
4. This parameter is valid for any VCC between 0V and 2.1V, with a transition of 10msec. From VCC = 2.1V to VCC = 5V ± 10%, a transition
time of up to 100µsec is permitted.
June 1, 1993
5
Philips Semiconductors Advanced BiCMOS Products
Product specification
Octal latched transceiver with dual enable,
inverting (3-State)
74ABT544
AC CHARACTERISTICS
GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω
LIMITS
SYMBOL
PARAMETER
Tamb = -40 to
+85oC
VCC = +5.0V ±0.5V
Tamb = +25oC
VCC = +5.0V
WAVEFORM
UNIT
Min
Typ
Max
Min
Max
2
1.1
1.4
3.6
3.9
5.1
5.4
1.1
1.4
6.1
6.4
ns
tPLH
tPHL
Propagation delay
An to Bn, Bn to An
tPLH
tPHL
Propagation delay
LEBA to An, LEAB to Bn
1, 2
1.6
2.1
4.1
4.6
5.6
6.1
1.6
2.1
6.6
7.1
ns
tPZH
tPZL
Output enable time
OEBA to An, OEAB to Bn
4
5
1.4
2.5
3.9
5.0
5.4
6.5
1.4
2.5
6.4
7.5
ns
tPHZ
tPLZ
Output disable time
OEBA to An, OEAB to Bn
4
5
2.5
1.0
5.9
5.5
7.4
7.0
3.4
3.0
8.4
8.0
ns
tPZH
tPZL
Output enable time
EBA to An, EAB to Bn
4
5
1.4
2.5
3.9
5.0
5.4
6.5
1.4
2.5
6.4
7.5
ns
tPHZ
tPLZ
Output disable time
EBA to An, EAB to Bn
4
5
2.5
1.0
5.9
5.5
7.4
7.0
3.4
3.0
8.4
8.0
ns
AC SETUP REQUIREMENTS
GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω
LIMITS
SYMBOL
PARAMETER
+25oC
Tamb =
VCC = +5.0V
WAVEFORM
Tamb = -40 to +85oC
VCC = +5.0V ±0.5V
UNIT
Min
Typ
Min
3
3.0
3.0
1.5
0.6
3.0
3.0
ns
Hold time
An to LEAB, Bn to LEBA
3
0.5
0.5
–0.3
–1.3
0.5
0.5
ns
ts(H)
ts(L)
Setup time
An to EAB, Bn to EBA
3
3.0
3.0
1.5
0.6
3.0
3.0
ns
th(H)
th(L)
Hold time
An to EAB, Bn to EBA
3
0.5
0.5
–0.2
–1.3
0.5
0.5
ns
tw(L)
Latch enable pulse width, Low
3
3.5
1.8
3.5
ns
ts(H)
ts(L)
Setup time
An to LEAB, Bn to LEBA
th(H)
th(L)
June 1, 1993
6
Philips Semiconductors Advanced BiCMOS Products
Product specification
Octal latched transceiver with dual enable,
inverting (3-State)
74ABT544
AC WAVEFORMS
VM = 1.5V, VIN = GND to 3.0V
VIN
VM
VIN
VM
tPHL
VM
tPLH
VOUT
VM
tPLH
tPHL
VOUT
VM
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
VM
VM
ÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉ
Waveform 1. Propagation Delay For Inverting Output
An, Bn
VM
Waveform 2. Propagation Delay For Non–Inverting
Output
VM
VM
ts(H)
VM
th(H)
VM
ts(L)
th(L)
LEAB, LEBA
VM
tw(L)
VM
Waveform 3. Data Setup and Hold Times And
Latch Enable Pulse Width
OEAB, OEBA,
EAB, EBA
VM
OEAB, OEBA,
EAB, EBA
VM
tPZH
tPHZ
An, Bn
VM
VM
VM
tPZL
tPLZ
An, Bn
VOH –0.3V
VM
0V
Waveform 4. 3–State Output Enable Time to High Level
and Output Disable Time from High Level
Waveform 5. 3–State Output Enable Time to Low Level
and Output Disable Time from Low Level
NOTE: The shaded areas indicate when the input is permitted to change for predictable output performance.
June 1, 1993
VOL +0.3V
0V
7
Philips Semiconductors Advanced BiCMOS Products
Product specification
Octal latched transceiver with dual enable,
inverting (3-State)
74ABT544
TEST CIRCUIT AND WAVEFORM
VCC
7.0V
VOUT
VIN
PULSE
GENERATOR
tW
90%
VM
NEGATIVE
PULSE
10%
0V
tTHL (tF)
CL
tTLH (tR)
tTLH (tR)
RL
tTHL (tF)
90%
POSITIVE
PULSE
Test Circuit for 3-State Outputs
AMP (V)
90%
VM
VM
10%
10%
tW
SWITCH POSITION
TEST
SWITCH
tPLZ
closed
tPZL
closed
All other
open
0V
VM = 1.5V
Input Pulse Definition
INPUT PULSE REQUIREMENTS
DEFINITIONS
FAMILY
RL = Load resistor; see AC CHARACTERISTICS for value.
CL = Load capacitance includes jig and probe capacitance;
see AC CHARACTERISTICS for value.
74ABT
RT = Termination resistance should be equal to ZOUT of
pulse generators.
June 1, 1993
AMP (V)
VM
10%
RL
D.U.T
RT
90%
8
Amplitude
Rep. Rate
tW
tR
tF
3.0V
1MHz
500ns
2.5ns
2.5ns