INFINEON BSC360N15NS3G

BSC360N15NS3 G
"%&$!"#™3 Power-Transistor
Product Summary
Features
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Package
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Marking
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Parameter
Symbol Conditions
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T 8 T
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Unit
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Value
@175 BSC360N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
)&/
%
%
-(
)-(
%
%
Thermal characteristics
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Static characteristics
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@175 BSC360N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
01+
))1(
%
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),)
Dynamic characteristics
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Reverse Diode
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2 Drain current
P `[`4R"T 8#
I 94R"T 8 V =H" .
80
40
60
30
ID [A]
P tot [W]
1 Power dissipation
40
20
20
10
0
0
0
50
100
150
200
0
25
50
75
100
125
150
175
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94R"V 9H T 8 T D 4(
Z `[email protected]"t \#
@1B1=5D5B t \
@1B1=5D5B
D 4t \'T
103
101
VC
102
VC
100
Z thJC [K/W]
I D [A]
VC
=C
10
1
(&-
(&*
(&)
(&((&(*
10-1
=C
100
(&()
C9>7<5 @E<C5
98
10-1
10
10-2
-1
10
0
10
1
10
2
10
3
V DS [V]
+ 5F
10-5
10-4
10-3
10-2
10-1
100
t p [s]
@175 BSC360N15NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V T
R 9H"[Z#4R"I 9 T V T
@1B
1=5D5B V =H
@1B1=5D5B
V =H
80
60
.
.
.
.
.
50
60
R DS(on) [m ]
I D [A]
.
40
.
40
.
.
.
30
20
20
.
10
.
0
0
0
1
2
3
4
5
0
10
20
V DS [V]
30
40
50
40
50
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
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g R_4R"I 9 T V T
@1B
1=5D5B T V
40
50
40
30
g fs [S]
I D [A]
30
20
20
10
10
T
T
0
0
0
1
2
3
4
5
6
7
+ 5F
0
10
20
30
I D [A]
V GS [V]
@175 BSC360N15NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9 V =H .
V =H"`T#4R"T V V =H4V 9H
@1B1=5D5B
I9
80
4
70
3.5
60
3
50
2.5
V
V GS(th) [V]
R DS(on) [m ]
V
40
`e\
2
30
1.5
20
1
10
0.5
0
0
-60
-20
20
60
100
140
-60
-20
20
T j [°C]
60
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 4R"V 9H V =H . f & " J
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@1B1=5D5B
TV
104
103
8U__
103
102
T
I F [A]
C [pF]
8[__
102
T =1H
T
T =1H
101
101
8^__
100
0
20
40
60
80
100
120
V DS [V]
+ 5F
0
0.5
1
1.5
2
V SD [V]
@175 BSC360N15NS3 G
13 Avalanche characteristics
14 Typ. gate charge
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V =H4R"Q SM`Q I 9 @E<C54
@1B
1=5D5B T V"_`M^`#
@1B1=5D5B
V 99
100
10
.
8
.
.
6
V GS [V]
I AS [A]
T
10
T
4
T
2
1
0
1
10
100
1000
0
5
10
15
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 7G"9HH#4R"T V I 9 =
170
V =H
Qg
V BR(DSS) [V]
160
150
V S _"`T#
140
Q S "`T#
Q _c
Q S_
130
-60
-20
20
60
100
Q g ate
Q SP
140
T j [°C]
+ 5F
@175 BSC360N15NS3 G
PG-TDSON-8 Outline
+ 5F
@175 BSC360N15NS3 G
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