PHILIPS BYQ63

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYQ63
Ripple blocking diode
Product specification
1998 Dec 04
Philips Semiconductors
Product specification
Ripple blocking diode
BYQ63
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
• Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
2/3 page k(Datasheet)
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
The SOD57 is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
300
V
VR
continuous reverse voltage
−
300
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 85 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
−
1.05
A
averaged over any 20 ms period;
Tamb = 60 °C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
−
0.68
A
Ttp = 85 °C
−
9.6
A
Tamb = 60 °C
−
6.4
A
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
30
A
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
1998 Dec 04
2
Philips Semiconductors
Product specification
Ripple blocking diode
BYQ63
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IF = 1 A; Tj = Tj max; see Fig.5
−
−
1.3
IF = 1 A; see Fig.5
−
−
2.15
V
VR = VRRMmax;
see Fig.6
−
−
5
µA
VR = VRRMmax; Tj = 165 °C;
see Fig.6
−
−
150
µA
−
−
1.5
µs
400
−
−
ns
V
tfr
forward recovery time
when switched to IF = 5 A
in 50 ns; see Fig.9
ton
turn-on time
when switched from VF = 0 to
VF = 3 V; measured between
10% and 90% of IFmax;
see Fig.11
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at
IR = 0.25 A; see Fig.11
−
−
150
ns
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.7
−
35
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
46
K/W
100
K/W
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
Rth j-a
thermal resistance from junction to ambient
note 1
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the ‘General Part of associated Handbook.’
1998 Dec 04
3
Philips Semiconductors
Product specification
Ripple blocking diode
BYQ63
GRAPHICAL DATA
MLB533
2
MLB534
1
handbook, halfpage
handbook, halfpage
I F(AV)
I F(AV)
(A)
(A)
lead length 10 mm
1
0.5
0
0
100
0
T tp ( oC)
200
100
0
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.8.
Switched mode application.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Tamb ( oC)
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MBD427
MLB532
3
200
8
handbook, halfpage
IF
(A)
P
(W)
6
a=3
2
2.5
2
1.57
4
1.42
1
2
0
0
0.5
I F(AV) (A)
0
1
0
2
4
VF (V)
6
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.4
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1998 Dec 04
Fig.5
4
Forward current as a function of forward
voltage; maximum values.
Philips Semiconductors
Product specification
Ripple blocking diode
BYQ63
MGC550
103
handbook, halfpage
MBD437
10 2
handbook, halfpage
IR
(µA)
Cd
(pF)
102
10
10
1
1
0
100
Tj (°C)
200
1
10 2
10 3
V R (V)
10 4
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax.
Fig.6
10
Reverse current as a function of junction
temperature; maximum values.
Fig.7
50
handbook, halfpage
Diode capacitance as a function of reverse
voltage; typical values.
MGC500
handbook, halfpage
V
F
25
100% 110%
7
50
t fr
t
IF
2
3
10%
t
MGA200
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1998 Dec 04
Fig.9 Forward recovery time definition.
5
Philips Semiconductors
Product specification
Ripple blocking diode
BYQ63
handbook, full pagewidth
3V
VF
DUT
(V)
0
50 Ω
10 Ω
100%
90%
IF
(A)
10%
0
ton
MBH530
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 10 ns.
Fig.10 Test circuit and turn-on time waveform and definition.
handbook, full pagewidth
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.11 Test circuit and reverse recovery time waveform and definition.
1998 Dec 04
6
MAM057
Philips Semiconductors
Ripple blocking diode
PACKAGE OUTLINE
Product specification
BYQ63
Hermetically sealed glass package; axial leaded; 2 leads
SOD57
(1)
k
D
G
L
a
b
L
DIMENSIONS (mm are the original dimensions)
UNIT
b
max.
D
max.
G
max.
L
min.
mm
0.81
3.81
4.57
28
0
2.5
5 mm
scale
Note
1. The marking band indicates the cathode.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-10-14
SOD57
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Dec 04
7
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
135106/00/01/pp8
Date of release: 1998 Dec 04
Document order number:
9397 750 04883