PHILIPS PHE13003A

PHE13003A
Silicon diffused power transistor
Rev. 01 — 13 August 2009
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54
(TO-92) 3 leads plastic package.
1.2 Features and benefits
„ Fast switching
„ High voltage capability of 700 V
1.3 Applications
„ Compact fluorescent lamps (CFL)
„ Inverters
„ Electronic lighting ballasts
„ Off-line self-oscillating power supplies
1.4 Quick reference data
Table 1.
Quick reference
Conditions
Min
Typ
Max
Unit
IC
Symbol Parameter
collector current
DC; see Figure 1
-
-
1
A
Ptot
total power
dissipation
Tlead ≤ 25 °C; see Figure 2
-
-
2.1
W
VCESM
collector-emitter
peak voltage
VBE = 0 V
-
-
700
V
IC = 0.8 A; VCE = 5 V;
Tlead = 25 °C;
see Figure 8 and 9
5
7.5
20
Static characteristics
hFE
DC current gain
PHE13003A
NXP Semiconductors
Silicon diffused power transistor
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
1
B
base
2
C
collector
3
E
emitter
Simplified outline
Graphic symbol
C
B
E
sym123
321
SOT54
(TO-92)
3. Ordering information
Table 3.
Ordering information
Type number
PHE13003A
Package
Name
Description
Version
TO-92
plastic single-ended leaded (through hole) package; 3 leads
SOT54
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCESM
collector-emitter peak
voltage
VBE = 0 V
-
700
V
VCBO
collector-base voltage
IE = 0 A
-
700
V
VCEO
collector-emitter
voltage
IB = 0 A
-
400
V
IC
collector current
DC; see Figure 1
-
1
A
ICM
peak collector current
-
2
A
IB
base current
-
0.5
A
IBM
peak base current
Ptot
total power dissipation
Tstg
-
1
A
-
2.1
W
storage temperature
-65
150
°C
Tj
junction temperature
-
150
°C
VEBO
emitter-base voltage
-
9
V
Tlead ≤ 25 °C; see Figure 2
IC = 0 A; I(Emitter) = 10 mA
PHE13003A_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 August 2009
2 of 11
PHE13003A
NXP Semiconductors
Silicon diffused power transistor
003aad545
102
IC
(A)
10
IC(max) 1
10−1
(1)
10−2
DC
10−3
1
102
10
103
VCL(CE) (V)
Fig 1.
Forward bias safe operating area
03aa13
120
Pder
(%)
80
40
0
0
50
100
150
200
Th (°C)
Fig 2.
Normalized total power dissipation as a function of heatsink temperature
PHE13003A_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 August 2009
3 of 11
PHE13003A
NXP Semiconductors
Silicon diffused power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Rth(j-lead)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from see Figure 3
junction to lead
-
-
60
K/W
thermal resistance from
junction to ambient
-
150
-
K/W
001aab451
102
Zth(j-lead)
(K/W)
10
1
δ=
P
tp
T
10−1
t
tp
T
10−2
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 3.
Transient thermal impedance from junction to lead as a function of pulse width
PHE13003A_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 August 2009
4 of 11
PHE13003A
NXP Semiconductors
Silicon diffused power transistor
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
collector-emitter cut-off VBE = 0 V; VCE = 700 V; Tj = 25 °C
current
VBE = 0 V; VCE = 700 V; Tj = 125 °C
ICES
-
-
1
mA
-
-
5
mA
IEBO
emitter-base cut-off
current
VEB = 9 V; IC = 0 A; Tlead = 25 °C
-
-
1
mA
VCEOsus
collector-emitter
sustaining voltage
IB = 0 A; IC = 1 mA; LC = 25 mH;
Tlead = 25 °C; see Figure 4 and 5
400
-
-
V
VCEsat
collector-emitter
saturation voltage
IC = 0.25 A; IB = 50 mA; Tlead = 25 °C;
see Figure 6
-
0.2
0.5
V
IC = 0.5 A; IB = 125 mA; Tlead = 25 °C;
see Figure 6
-
0.3
1
V
IC = 0.75 A; IB = 250 mA; Tlead = 25 °C;
see Figure 6
-
0.4
1.5
V
base-emitter saturation IC = 0.25 A; IB = 50 mA; Tlead = 25 °C;
voltage
see Figure 7
-
-
1
V
IC = 0.5 A; IB = 125 mA; Tlead = 25 °C;
see Figure 7
-
-
1.2
V
IC = 0.5 mA; VCE = 2 V; Tlead = 25 °C;
see Figure 8 and 9
12
-
-
IC = 0.4 A; VCE = 5 V; Tlead = 25 °C;
see Figure 8 and 9
10
-
30
IC = 0.8 A; VCE = 5 V; Tlead = 25 °C;
see Figure 8 and 9
5
7.5
20
IC = 1 A; IBon = 200 mA; VBB = -5 V;
LB = 1 µH; Tlead = 25 °C; inductive load;
see Figure 10 and 11
-
80
-
VBEsat
DC current gain
hFE
Dynamic characteristics
tf
fall time
ns
IC
(mA)
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
250
vertical
6V
300 Ω
1Ω
100
30 Hz to 60 Hz
001aab987
Fig 4.
Test circuit for collector-emitter sustaining
voltage
10
0
min
VCE (V)
VCEOsus
001aab988
Fig 5.
Oscilloscope display for collector-emitter
sustaining voltage test waveform
PHE13003A_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 August 2009
5 of 11
PHE13003A
NXP Semiconductors
Silicon diffused power transistor
003aad548
2.0
VCEsat
(V)
Tj = 125 °C
003aad549
1.6
VBEsat
(V)
1.4
1.6
1.2
Tj = 25 °C
1.0
1.2
Tj = −35 °C
Tj = −35 °C
Tj = 25 °C
0.8
0.8
Tj = 125 °C
0.6
0.4
0.4
0.2
0
10−2
10−1
1
0
10−2
10
IC (A)
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values
003aad546
102
Fig 7.
10−1
1
IC (A)
Base-emitter saturation voltage as a function of
collector current; typical values
003aad547
102
Tj = 125 °C
Tj = 125 °C
hFE
hFE
Tj = 25 °C Tj = −35 °C
Tj = 25 °C Tj = −35 °C
10
10
VCE = 3 V
VCE = 5 V
(1)
(1)
(2)
(2)
(3)
1
10−3
10−2
10−1
1
(3)
1
10−3
10
IC (A)
Fig 8.
10
10−1
1
10
IC (A)
DC current gain as a function of collector
current; typical values
Fig 9.
DC current gain as a function of collector
current; typical values
PHE13003A_1
Product data sheet
10−2
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 August 2009
6 of 11
PHE13003A
NXP Semiconductors
Silicon diffused power transistor
IC
VCC
ICon
90 %
LC
IBon
VBB
LB
DUT
001aab991
10 %
t
tf
Fig 10. Test circuit for inductive load switching
IB
ts
toff
IBon
t
−IBoff
001aab992
Fig 11. Switching times waveforms for inductive load
PHE13003A_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 August 2009
7 of 11
PHE13003A
NXP Semiconductors
Silicon diffused power transistor
7. Package outline
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
IEC
SOT54
JEDEC
JEITA
TO-92
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
Fig 12. Package outline SOT54 (TO-92)
PHE13003A_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 August 2009
8 of 11
PHE13003A
NXP Semiconductors
Silicon diffused power transistor
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PHE13003A_1
20090813
Product data sheet
-
-
PHE13003A_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 August 2009
9 of 11
PHE13003A
NXP Semiconductors
Silicon diffused power transistor
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PHE13003A_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 13 August 2009
10 of 11
PHE13003A
NXP Semiconductors
Silicon diffused power transistor
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Contact information. . . . . . . . . . . . . . . . . . . . . .10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 August 2009
Document identifier: PHE13003A_1