PMBTA42DS NPN/NPN high-voltage double transistors Rev. 02 — 27 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features n High breakdown voltage n Two electrically isolated transistors n Small SMD plastic package 1.3 Applications n Automotive: u High- and low-side switches u Voltage regulators n Communication: Telecom line interface n Consumer: CRT TV n Computing: Monitors 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage IC collector current ICM peak collector current open base single pulse; tp ≤ 1 ms - - 300 V - - 100 mA - - 200 mA PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 2. Pinning information Table 2. Pinning Pin Description 1 emitter TR1 2 base TR2 3 collector TR2 4 emitter TR2 5 base TR1 6 collector TR1 Simplified outline 6 5 4 1 2 3 Symbol 6 5 4 TR1 TR2 1 2 3 006aaa677 3. Ordering information Table 3. Ordering information Type number PMBTA42DS Package Name Description Version SC-74 plastic surface mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMBTA42DS P4 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - 300 V VCEO collector-emitter voltage open base - 300 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current single pulse; tp ≤ 1 ms - 200 mA IBM peak base current single pulse; tp ≤ 1 ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 290 mW [2] - 370 mW [3] - 450 mW PMBTA42DS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 2 of 10 PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 420 mW [2] - 560 mW [3] - 700 mW Per device Ptot Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - - 431 K/W [2] - - 338 K/W [3] - - 278 K/W - - 105 K/W [1] - - 298 K/W [2] - - 223 K/W [3] - - 179 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PMBTA42DS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 3 of 10 PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off current VCB = 200 V; IE = 0 A - - 100 nA IEBO emitter-base cut-off current VEB = 6 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 10 V; IC = 1 mA 25 - - VCE = 10 V; IC = 10 mA 40 - - VCE = 10 V; IC = 30 mA 40 - - VCEsat collector-emitter IC = 20 mA; IB = 2 mA saturation voltage - - 500 mV VBEsat base-emitter IC = 20 mA; IB = 2 mA saturation voltage - - 900 mV Cre feedback capacitance VCB = 20 V; IC = ic = 0 A; f = 1 MHz - - 3 pF fT transition frequency VCE = 20 V; IC = 10 mA; f = 100 MHz 50 - - MHz 006aaa688 200 IB (mA) = 30 27 24 21 18 15 12 IC (mA) 150 mld391 300 hFE (1) 200 9 6 100 (2) 3 100 (3) 50 0 10−1 0 0 2 4 6 8 10 VCE (V) 1 102 10 IC (mA) Tamb = 25 °C VCE = 10 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. Collector current as a function of collector-emitter voltage; typical values Fig 2. DC current gain as a function of collector current; typical values PMBTA42DS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 4 of 10 PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors mld393 1000 VBE (mV) mld394 1000 VBEsat (mV) (1) 800 (1) 800 (2) (2) 600 600 (3) 400 (3) 400 200 0 10−1 1 200 10−1 102 10 1 IC (mA) VCE = 10 V IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Fig 3. 102 10 IC (mA) Base-emitter voltage as a function of collector current; typical values Fig 4. Base-emitter saturation voltage as a function of collector current, typical values mld395 103 VCEsat (mV) (1) 102 (2) (3) 10 10−1 1 102 10 IC (mA) IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values PMBTA42DS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 5 of 10 PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 8. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.26 0.10 0.40 0.25 0.95 1.9 Dimensions in mm Fig 6. 04-11-08 Package outline SOT457 (SC-74) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMBTA42DS Package SOT457 Description 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 13. [2] T1: normal taping [3] T2: reverse taping PMBTA42DS_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 6 of 10 PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 10. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 7. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 8. Wave soldering footprint SOT457 (SC-74) PMBTA42DS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 7 of 10 PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBTA42DS_2 20090827 Product data sheet - PMBTA42DS_1 Modifications: PMBTA42DS_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 8 “Wave soldering footprint SOT457 (SC-74)”:updated 20060106 Product data sheet PMBTA42DS_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 8 of 10 PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMBTA42DS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 9 of 10 PMBTA42DS NXP Semiconductors NPN/NPN high-voltage double transistors 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information. . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 August 2009 Document identifier: PMBTA42DS_2