PHILIPS BAP65-01

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAP65-01
Silicon PIN diode
Preliminary specification
2001 Nov 01
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP65-01
PINNING
FEATURES
• High voltage, current controlled
PIN
DESCRIPTION
• RF resistor for RF switches
1
cathode
• Low diode capacitance
2
anode
• Low diode forward resistance (low loss)
• Very low series inductance.
APPLICATIONS
handbook, halfpage
• RF attenuators and switches
• Bandswitch for TV tuners
;
1
2
Top view
• Series diode for mobile communication transmit/receive
switch.
MAM405
Marking code: K6.
DESCRIPTION
Fig.1 Simplified outline (SOD723A) and symbol.
Planar PIN diode in a SOD723A ultra small SMD plastic
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
30
V
IF
continuous forward current
−
100
mA
Ptot
total power dissipation
−
315
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
2001 Nov 01
Ts ≤ 90 °C
2
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP65-01
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 50 mA
0.9
1.1
V
IR
reverse leakage current
VR = 20 V
−
20
nA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
0.61
−
pF
VR = 1 V; f = 1 MHz
0.48
0.9
pF
VR = 3 V; f = 1 MHz
0.43
0.8
pF
VR = 20 V; f = 1 MHz
0.375
−
pF
rD
|s21
|s21
|s21
|s21
|s21
diode forward resistance
|2
|2
|2
|2
|2
isolation
insertion loss
insertion loss
insertion loss
insertion loss
IF = 1 mA; f = 100 MHz
1.0
−
Ω
IF = 5 mA; f = 100 MHz; note 1
0.6
0.95
Ω
IF = 10 mA; f = 100 MHz; note 1
0.5
0.9
Ω
IF = 100 mA; f = 100 MHz
0.3
−
Ω
VR = 0; f = 900 MHz
9.4
−
dB
VR = 0; f = 1800 MHz
5.5
−
dB
VR = 0; f = 2450 MHz
4.1
−
dB
IF = 1 mA; f = 900 MHz
0.10
−
dB
IF = 1 mA; f = 1800 MHz
0.12
−
dB
IF = 1 mA; f = 2450 MHz
0.15
−
dB
IF = 5 mA; f = 900 MHz
0.08
−
dB
IF = 5 mA; f = 1800 MHz
0.10
−
dB
IF = 5 mA; f = 2450 MHz
0.12
−
dB
IF = 10 mA; f = 900 MHz
0.06
−
dB
IF = 10 mA; f = 1800 MHz
0.09
−
dB
IF = 10 mA; f = 2450 MHz
0.11
−
dB
IF = 100 mA; f = 900 MHz
0.05
−
dB
IF = 100 mA; f = 1800 MHz
0.08
−
dB
IF = 100 mA; f = 2450 MHz
0.10
−
dB
τL
charge carrier life time
when switched from IF = 10 mA to 0.17
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
−
µs
LS
series inductance
IF = 100 mA; f = 100 MHz
−
nH
0.6
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
2001 Nov 01
PARAMETER
thermal resistance from junction to soldering point
3
VALUE
UNIT
190
K/W
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP65-01
GRAPHICAL DATA
10
rD
(Ω)
700
Cd
(pF) 600
500
400
1
300
200
100
0.1
0
0.1
1
10
100
IF (mA)
0
4
8
12
16
20
VR (V)
f = 100 MHz; T j = 25 °C.
f = 1 MHz; T j = 25 °C.
Fig.2
Fig.3
Forward resistance as a function of forward
current; typical values.
0
Diode capacitance as a function of reverse
voltage; typical values.
0
2
|s21|
(dB)
(4)
(5)
(2)
(3)
2
|s21|
(dB)
-0.1
-10
(1)
-0.2
-20
-0.3
-30
-0.4
-0.5
-40
0
1
2
3
0
f (GHz)
(1) I F = 0.5 mA.
(4) I F = 10 mA.
(2) I F = 1 mA.
(5) I F = 100 mA.
1
2
3
f (GHz)
(3) I F = 5 mA.
Diode inserted in series with a 50 Ω stripline circuit and biased
via the analyzer Tee network. T amb = 25 °C.
Fig.4
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
T amb = 25 °C.
Insertion loss (|s21|2) of the diode as a
function of frequency; typical values.
2001 Nov 01
Fig.5
4
Isolation (|s21|2) of the diode as a function of
frequency; typical values.
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP65-01
PACKAGE OUTLINE
SOD723A
Fig.6
R
DE
UN
2001 Nov 01
NT
ME
OP
L
VE
DE
5
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP65-01
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 01
6
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613512/02/pp7
Date of release: 2001
Nov 01
Document order number:
9397 750 08974