PD - 91723 IRG4ZC71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 360V , TJ = 125°C, VGE = 15V • IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery antiparallel diodes for use in bridge configurations • Combines low conduction losses with high switching speed • Low profile low inductance SMD-10 Package • Separated control & Power-connections for easy paralleling • Good coplanarity • Easy solder inspection and cleaning n-channel C VCES = 600V VCE(ON)typ = 1.75V G @VGE = 15V, IC = 60A E(k) E Benefits • Highest power density and efficiency available • HEXFRED Diodes optimized for performance with IGBTs. Minimized recovery characteristics • IGBTs optimized for specific application conditions Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 600 100 60 200 200 50 200 10 ± 20 350 140 -55 to +150 V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical), * Weight Min. Typ. Max. ––– ––– ––– ––– ––– ––– 0.44 6.0(0.21) 0.36 0.69 ––– ––– Units °C/W g (oz) * Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink. www.irf.com 1 IRG4ZC71KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 — — V Temperature Coeff. of Breakdown Voltage — 0.5 — V/°C Collector-to-Emitter Saturation Voltage — 1.75 2.3 — 2.15 — V — 1.75 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -10 — mV/°C Forward Transconductance 31 46 — S Zero Gate Voltage Collector Current — — 500 µA — — 13 mA Diode Forward Voltage Drop — 1.4 1.7 V — 1.4 — Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 10mA IC = 60A VGE = 15V IC = 100A See Fig. 2, 5 IC = 60A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 1.5mA VCE = 100V, IC = 60A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 60A See Fig. 13 IC = 60A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — 10 Typ. 343 44 161 140 63 475 133 1.49 3.11 4.60 — — — — — — — — — — — — — — — — — — 145 65 630 196 7.6 2.0 6850 730 190 90 120 7.3 11 360 780 370 220 Max. Units Conditions 515 IC = 60A 66 nC VCC = 400V See Fig.8 242 VGE = 15V — — TJ = 25°C ns 710 IC = 60A, VCC = 480V 200 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ and diode reverse recovery 6.0 See Fig. 9,10,18 — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 5.0Ω — TJ = 150°C, See Fig. 10,11,18 — IC = 60A, VCC = 480V ns — VGE = 15V, RG = 5.0Ω, — Energy losses include "tail" — mJ and diode reverse recovery — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 140 ns TJ = 25°C See Fig. 180 TJ = 125°C 14 IF = 50A 11 A TJ = 25°C See Fig. 16 TJ = 125°C 15 VR = 200V 550 nC TJ = 25°C See Fig. 1200 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 www.irf.com IRG4ZC71KD 50 LOAD CURRENT (A) F or b oth: D uty c y c le : 50 % T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified 38 P ow er D is s ipation = 44 W S q u a re w a v e : 60% of rated voltage 25 I 13 Id e a l d io d es 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 TJ = 2 5 °C 100 100 TJ = 1 5 0 °C 10 VG E = 1 5 V 2 0 µ s P U L S E W ID T H A 1 1 2 3 V C E , C o lle cto r-to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) Ic , Collector-to-Emitter Current (A) 1000 4 TJ = 150 °C TJ = 25 ° C 10 V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4ZC71KD 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 100 80 60 40 20 50 75 100 125 150 2.0 IC = 60 A IC = 30 A 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C) TC , Case Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature IC = 120 A 1.0 -60 -40 -20 0 25 VGE = 15V 80 us PULSE WIDTH Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature T he rm a l R es p on se (Zth JC ) 1 D = 0.50 0.1 0.20 PDM 0.10 t 1 t2 0.05 0.02 0.01 Notes: 1. Duty factor D = t S IN G LE P U LS E (TH E R M A L R E S P O N S E ) 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 0.001 0.01 0.1 1 10 A 100 t 1 , R e cta n g u la r P u ls e D u ra tio n (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4ZC71KD VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 8000 Cies 6000 4000 2000 Coes VGE , Gate-to-Emitter Voltage (V) 20 10000 VCC = 400V I C = 60A 16 12 8 4 Cres 0 0 1 10 0 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage V CC V GE TJ IC 100 = 480V = 15V = 25 ° C = 60A 10 8 6 4 0 10 20 30 40 RG , Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 200 300 400 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 12 100 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) 50 Ω RG = 5.0Ohm VGE = 15V VCC = 480V IC = 120 A 10 IC = 60 A IC = 30 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature °( C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4ZC71KD 1000 Ω = 5.0Ohm = 150 ° C = 480V = 15V VGE = 20V T J = 125 oC I C , Collector Current (A) RG TJ VCC VGE 15 100 10 5 SAFE OPERATING AREA 10 0 20 40 60 80 100 1 120 10 100 1000 VCE , Collector-to-Emitter Voltage (V) I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA 1000 Instantaneous forward current--IIF (A) Instantaneous Forward Current (A) F Total Switching Losses (mJ) 20 100 10 TJ = 1 5 0 °C TJ = 1 2 5 °C TJ = 2 5 °C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V-FMV (V) F o rw a rd V o lta ge D ro p F M (V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4ZC71KD 150 100 I F = 100A I F = 50A I F = 25A I F = 100A 120 I F = 50A I F = 25A Irr- ( A) trr- (nC) 90 10 60 30 V R = 2 00 V T J = 1 2 5°C T J = 2 5 °C 0 100 VR = 2 00 V T J = 1 2 5°C T J = 2 5 °C di f /dt - (A /µ s) 1 100 1000 Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 10000 4000 VR = 2 00 V T J = 1 2 5°C T J = 2 5 °C V R = 2 00 V T J = 1 2 5°C T J = 2 5 °C I F = 100A IF = 100A I F = 50A I F = 50A 3000 di (rec) M/dt- (A /µs) IF = 25A Qrr- (nC) 1000 di f /dt - (A/µ s) 2000 I F = 25A 1000 1000 0 100 di f /dt - (A /µ s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 100 100 1000 di f /dt - (A/µ s) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4ZC71KD 90% V ge Same type device as D .U.T. +V ge V ce 430µF 80% of Vce D .U .T. Ic 90% Ic 10% V ce Ic 5% Ic td (off) tf E off = Fig. 18a - Test Circuit for Measurement of ∫ Vce Ic dt t1+5µ S V ce ic dt t1 ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g trr Q rr = Ic trr id Icdtdt tx ∫ +V g tx 10% V c c 10% Irr Vcc D U T V O LT A G E AND CURRENT Vce V pk Irr Vcc 10% Ic Ipk 90% Ic Ic D IO D E R E C O V E R Y W AVEFORMS tr td(on) 5% V c e t1 ∫ t2 c e ieIcdt dt E on = VVce t1 t2 E rec = D IO D E R E V E R S E RECOVERY ENERG Y t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ Vc Ic dt t4 V d id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4ZC71KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 480V 4 X IC @25°C 0 - 480V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit Notes: ➀ Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ➁ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) ➂ Pulse width ≤ 80µs; duty factor ≤ 0.1% ➃ Pulse width 5.0µs, single shot www.irf.com 9 IRG4ZC71KD Case Outline — SMD-10 17.30 Dimensions are shown in millimeters 14.20 E(k) G 4.27 n/c 0.90 5.55 29.00 C 0.90 E E Recommended footprint WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/98 10 www.irf.com