Previous Datasheet Index Next Data Sheet PD-9.1544 IRGBC20SD2 PROVISIONAL Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Switching-loss rating includes all 'tail' losses • HEXFREDTM soft ultrafast diodes • Optimized for line frequency operation (to 400HZ) VCE(SAT) ≤ 2.4V G @VGE = 15V, IC = 10A E Description Co-packaged IGBTs are a natural extension of International Rectifier's well-known IGBT line. They provide the convenience of an IBGT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, highcurrent, motor control, UPS and power supply applications. n - ch a n n e l TO-220AB Absolute Maximum Ratings Parameter VCES I C @ TC = 25°C I C @ TC = 100°C I CM I LM I F @ TC = 100°C I FM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 19 10 76 38 7.0 32 ± 20 60 24 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight To Order Min. Typ. Max. ------------------------- ----------0.50 ----2 (0.07) 2.1 3.5 -----80 ------ Units °C/W g (oz) Revision 0:9/04/96 Previous Datasheet Index Next Data Sheet IRGBC20SD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. 600 ∆V(BR)CES /∆TJ ------VCE(on) ------Gate Threshold Voltage 3.0 VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance 2.0 gfe Zero Gate Voltage Collector Current ---ICES ---Diode Forward Voltage Drop ---VFM ---Gate-to-Emitter Leakage Current ---IGES V(BR)CES Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Typ. ---0.75 1.8 2.4 1.9 ----11 5.8 ------1.4 1.3 ---- Max. Units Conditions ---V VGE = 0V, IC = 250µA ---- V/°C VGE = 0V, IC = 1.0mA 2.4 IC = 10A VGE = 15V ---V IC = 19A ---IC = 10A, TJ = 150°C 5.5 VCE = VGE , IC = 250µA ---- mV/°C VCE = VGE , IC = 250µA ---S VCE = 100V, IC = 10A 250 µA VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, T J = 150°C 1.7 V IC = 8.0A 1.6 IC = 8.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc t d(on) tr t d(off) tf Eon Eoff Ets t d(on) tr t d(off) tf Ets LE Cies Coes Cres t rr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------- Typ. 1.6 2.3 7.0 72 69 820 910 0.70 3.9 4.6 78 90 1100 1800 7.0 7.5 360 36 5.2 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 2.6 IC = 10A 4.0 nC VCC = 400V 12 ---TJ = 25°C ---ns IC = 10A, VCC = 480V ---VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" and ---diode reverse recovery. ---mJ ------TJ = 150°C, ---ns ---VGE = 15V, RG = 50Ω ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V ---ƒ = 1.0MHz 55 ns TJ = 25°C IF = 8.0A 90 TJ = 125°C 5.0 A TJ = 25°C VR = 200V 8.0 TJ = 125°C 138 nC TJ = 25°C 360 TJ = 125°C di/dt 200A/µs ---- A/µs TJ = 25°C ---TJ = 125°C To Order Previous Datasheet Index Next Data Sheet IRGBC20SD2 80 F or b ot h: 60 Load Current (A) T ria n g ula r w a v e : D u t y c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0° C G a t e d riv e a s s p e c ifie d P o w e r D is s ipa t io n = 4 0W C la m p v o lta g e: 8 0 % o f ra te d S q u a re w a v e : 6 0 % o f ra te d v olt ag e 40 20 Id ea l diod es A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 TJ = 25°C T J = 150°C 10 V G E = 15V 20µs PULSE WIDTH 1 0.1 1 A 10 100 TJ = 150°C T J = 25°C 10 V C C = 10V 5µs PULSE WIDTH 1 4 6 8 10 VG E , Gate-to-Emitter Voltage (V) V C E , Collector-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics To Order A 12 Previous Datasheet Index Next Data Sheet IRGBC20SD2 2.5 V G E = 15V V C E , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 40 30 20 10 A 0 25 50 75 100 125 V G E = 15V 80µs PULSE WIDTH I C = 40A 2.0 I C = 20A 1.5 I C = 10A A 1.0 -60 150 T C , Case Temperature (°C) -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 D = 0.50 0.20 0 .1 0.10 PD M 0.05 0.02 t S ING LE PULS E (T HERMA L RE SPO NS E) t2 N otes : 1 . D uty fac tor D = t 0.01 0.01 0.0000 1 1 1 / t 2 2 . P ea k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.0 1 0.1 1 t 1 , R e ct an gu la r P ulse D ura tion (s ec ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case To Order 10 Previous Datasheet Index Next Data Sheet IRGBC20SD2 20 V G E = 0 V, f = 1M H z C ie s = C ge + C gc , C c e SH O RTE D C r es = C gc C o es = C c e + C gc V G E , G a te-to -E m itter V oltage (V ) C , C apac itan ce ( pF ) 4000 16 C ie s 3000 V CE = 40 0V I C = 20A 12 2000 C oe s C re s 1000 1 10 4 A 0 A 0 8 0 100 20 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 10 = 480V = 15V = 25°C = 20A 1.6 1.4 1.2 A 1.0 0 10 20 30 40 50 80 100 120 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) VC C VGE TC IC 60 Q g , T otal G at e C ha rge (nC ) V C E , C ollecto r-to-E m itte r V olta ge (V ) 1.8 40 R G = 10 Ω V G E = 15V V C C = 480V I C = 40A I C = 20A 1 I C = 10A 0.1 60 R G , Gate Resistance ( Ω) -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature To Order Previous Datasheet Index Next Data Sheet IRGBC20SD2 RG TC V CC V GE 4.0 1000 = 10 Ω = 150°C = 480V = 15V VGGE E= 20V T J = 1 25°C 100 3.0 S AFE O P ER ATIN G AR EA 2.0 10 1.0 A 0.0 0 10 20 30 40 1 1 50 10 100 V C E , C olle cto r-to-E m itte r V o lta g e (V ) I C , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Inst antan eous F orw ard C urrent - I F (A ) Total Switching Losses (mJ) 5.0 10 TJ = 15 0°C TJ = 12 5°C TJ = 2 5°C 1 0.8 1.2 1.6 2.0 2.4 F orwa rd V olta ge D rop - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current To Order 1000 Previous Datasheet Index Next Data Sheet IRGBC20SD2 100 100 VR = 2 0 0 V T J = 1 2 5 °C TJ = 2 5 ° C V R= 200V T J = 125°C T J = 25°C 80 I IR R M - (A ) t rr - (ns) I F = 30A I F = 30A 60 I F = 15A IF = 15 A 10 I F = 5 .0A 40 I F = 5.0A 20 100 di f /dt - (A/µs) 1 100 1000 1000 di f /dt - (A / µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 1000 800 VR = 2 0 0 V T J = 1 2 5 °C TJ = 2 5 ° C VR = 2 0 0 V T J = 1 2 5 °C TJ = 2 5 ° C di(re c)M /dt - (A / µs) 600 Q R R - (nC ) I F = 3 0A 400 I F = 15A IF = 5.0A I F = 5 .0 A I F = 1 5A I F = 3 0A 200 0 100 di f /d t - (A /µs ) 1000 100 100 1000 d i f /dt - (A /µs) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M /dt vs. dif/dt To Order Previous Datasheet Index Next Data Sheet IRGBC20SD2 90% Vge + Vg e Same t ype device as D.U.T. V ce Ic 90% Ic 10 % Vc e Ic 5% Ic 430µF 80% of Vce D.U.T. td (off) tf t1 +5µ S V ce ic d t t1 E off = Fig. 18a - Test Circuit for Measurement of ILM, Eon , Eoff(diode), t rr, Qrr, Irr, t d(on), t r, t d(off), t f t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr G ATE VO LTA G E D .U .T. 1 0% +V g Q rr = Ic trr id dt tx +V g tx 10% V cc 10 % Ir r V cc DUT V O LTA G E AN D C URR E NT V ce Vcc V pk Irr 10% Ic 9 0% Ic td( on) tr Ipk Ic DIO DE RE CO V E RY W AV E FO RM S 5% Vc e t1 t2 E on = V c e ie dt t1 Er ec = DIO D E RE V E RS E RE C O V ER Y EN ER G Y t2 t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, t4 V d id d t t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Eon , td(on), tr To Order Defining Erec, trr, Q rr, Irr Previous Datasheet Index Next Data Sheet IRGBC20SD2 V g G ATE S IG N AL DE VICE UNDE R TE S T CURR EN T D .U .T. VO L TA G E IN D.U.T. CURR EN T IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 10 00V V c* RL = 480V 4 X I C @25°C 0 - 480V 50V 60 00µ F 100 V Figure 19. Clamped Inductive Load Test Circuit To Order Figure 20. Pulsed Collector Current Test Circuit Previous Datasheet Index Next Data Sheet IRGBC20SD2 Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature VCC=80%(V CES), VGE =20V, L=10µH, RG= 50Ω Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Case Outline TO-247AC 3.65 (.143) 3.55 (.140) 0.25 (.010) M 15.90 (.626) 15.30 (.602) - B- -D - D B M -A 5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1 2 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 5.50 (.217) 4.50 (.177) LEAD ASSIGN MENT S 1 - GATE 2 - C OLLEC TOR 3 - EMITT ER 4 - C OLLEC TOR 3 -C- * 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 4.30 (.170) 3.70 (.145) 3X 1.40 (.056) 1.00 (.039) 0.25 (.010) M NOTES: 1 D IMENSIONS & TOLERANCIN G PER ANSI Y14.5M, 1982. 2 C ONTR OLLIN G D IM ENSION : INCH . 3 D IMENSIONS AR E SHOW N M ILLIM ETERS (INCH ES). 4 C ONFORM S T O JED EC OU TLIN E T O-247AC . * LONGER LEAD ED (20m m) VER SION AVAILABLE (TO-247AD) TO OR DER ADD "-E" SUF FIX TO PART NUM BER 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3X C A S 3.40 (.133) 3.00 (.118) C O NFO RM S TO J ED EC O UTLINE TO -247 AC (TO -3P ) D im en sion s in M illim ete rs a nd (Inc he s) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/96 To Order