Bulletin I27119 rev. B 06/02 GA100TS60SQ "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • • VCES = 600V Generation 4 Standard Speed IGBT Technology QuietIR Antiparallel diodes with Fast Soft recovery Very Low Conduction Losses Industry Standard Package Aluminum Nitride DBC UL approved (file E78996) IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25°C Benefits • • • • • Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Hard switching operation frequency up to 1 KHz Very low junction-to-case thermal resistance Low EMI INT-A-PAK Absolute Maximum Ratings Parameters VCES Collector-to-Emitter Voltage IC Continuos Collector Current Max Units 600 V @ TC = 25°C 220 A @ TC = 130°C 100 ICM Pulsed Collector Current ILM Peak Switching Current 440 VGE Gate-to-Emitter Voltage ± 20 VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation www.irf.com 440 @ TC = 25°C 780 @ TC = 100°C 312 V W 1 GA100TS60SQ Bulletin I27119 rev. B 06/02 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VBRCES Collector-to-Emitter Breakdown Voltage 600 V CE(on) Collector-to-Emitter Voltage V GE(th) Gate Threshold Voltage I CES Collector-to-Emiter Leakage V FM Current Diode Forward Voltage drop I GES Gate-to-Emitter Leakage Current V V GE = 0V, I C = 1mA 1.11 1.21 V GE = 15V, I C = 100A 1.39 1.08 1.17 IC = 200A V GE = 15V, I C = 100A, T J = 125°C 3 6 1.21 1.16 I C = 0.25mA 1 mA 10 1.28 V V GE = 0V, V CE = 600V, T J = 125°C I C = 100A, V GE = 0V 1.24 ± 250 V GE = 0V, V CE = 600V I C = 100A, V GE = 0V, T J = 125°C nA V GE = ± 20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Qge Total Gate Charge Gate-Emitter Charge 640 108 700 120 Qgc tr tf Eon Eoff Ets Eon Eoff Ets Gate-Collector Charge Rise Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy 230 0.45 1.0 4 23 27 6 35 41 300 Cies Coes Cres trr Irr Qrr Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge nC IC = 100A VCC = 400V VGE = 15V µs IC = 100A, VCC = 480V, VGE = 15V Rg = 15Ω 6 29 35 12 40 52 16250 1040 190 440 480 15 18 3400 4000 mJ mJ IC = 100A, VCC = 480V, VGE = 15V Rg = 15Ω, TJ = 125°C pF ns A nC VGE = 0V VCC = 30V f = 1.0 MHz IF = 50A, d IF/dt = 50A/µs VRR = 200V TJ = 125°C Thermal- Mechanical Specifications Parameters Min Max Units TJ Operating Junction Temperature Range - 40 150 °C TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case per Switch 0.16 0.48 RthCS Case-to-Sink Per Diode Per Module T Mounting torque Weight 2 Typ °C/ W 0.1 Case to heatsink Case to terminal 1, 2, 3 4 3 185 Nm g www.irf.com GA100TS60SQ Bulletin I27119 rev. B 06/02 1000 1000 IC , Collector-to-Emitter Current (A) IC, Collector-to-Emitter Current (A) Vge = 15V 100 Tj = 25˚C Tj = 125˚C 10 0.6 0.8 1 1.2 1.4 1.6 100 T J = 25˚C 10 Vce = 10V 380µs PULSE WIDTH 1 5.5 1.8 6.5 7.5 8.5 VCE, Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics 240 1.5 VCE, Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) T J = 125˚C 200 160 120 80 40 0 25 50 75 100 125 150 I C = 200A 1.3 I C = 100A 1.1 I = 50A 0.9 0.7 25 50 75 100 125 150 TC, Case Temperature (°C) TJ, Junction Temperature (°C) Fig. 3 - Maximum Collector Current vs. Case Temperature Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature www.irf.com 3 GA100TS60SQ Bulletin I27119 rev. B 06/02 35 Vcc = 400V Ic = 100A Tj = 25˚C, Vce = 480V 30 Vge = 15V, Ic = 100A 15 Switching Losses (mJ) VGE, Gate-to-Emitter Voltage (V) 20 10 5 Eoff 25 20 15 Eon 10 5 0 0 100 200 300 400 500 600 700 0 10 20 30 40 50 QG, Total Gate Charge (nC) RG, Gate Reistance (Ω) Fig. 5 - Typical Gate Charge vs. Gate-toEmitter Voltage Fig. 6 - Typical Switching Losses vs Gate Resistance 60 Tj = 125˚C Vce = 480V Vge = 15V Rge = 15 Ω Switching Losses (mJ) 50 Eoff 40 30 20 Eon 10 0 0 40 80 120 160 IC, Collector-to-Emitter Current (A) Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 4 www.irf.com GA100TS60SQ Bulletin I27119 rev. B 06/02 1000 500 450 400 t rr (ns) Instantaneous Forward Current - I F (A) Vr = 200V 100 Tj = 125˚C If = 50A, Tj = 125˚C 350 300 250 Tj = 25˚C If = 50A, Tj = 25˚C 200 10 0.6 0.8 1 1.2 1.4 150 1.6 0 200 400 600 800 1000 Forward Voltage Drop- VFM (V) dif /dt - A/µs Fig. 8 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 9 - Typical Reverse Recovery vs. dif /dt 140 20 Vr = 200V Vr = 200V 120 80 60 40 I F = 50A, Tj = 125˚C 15 If = 50A, Tj = 125˚C Q RR (nC) I RRM (A) 100 If = 50A, Tj = 25˚C 10 5 I F = 50A, Tj = 25˚C 20 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 dif /dt - A/µs dif /dt - A/µs Fig. 10 - Typical Reverse Recovery Current vs. dif /dt Fig. 11 - Typical Stored Charge vs. dif /dt www.irf.com 5 GA100TS60SQ Bulletin I27119 rev. B 06/02 Outline Table Electrical Diagram Dimensions in millimeters Note: unused terminals are not assembled in the package 6 www.irf.com GA100TS60SQ Bulletin I27119 rev. B 06/02 Ordering Information Table Device Code GA 100 1 2 T S 60 S Q 3 4 5 6 7 1 - Essential Part Number IGBT modules 2 - Current rating 3 - Circuit Configuration (T = Half Bridge) 4 - Int-A-Pak 5 - Voltage Code 6 - Speed/ Type (S = Standard Speed IGBT) 7 - Diode Type (Moat Fast S02) (100 = 100A) (60 = 600V) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 06/02 www.irf.com 7