IRF IRF7524D1

PD -91648C
IRF7524D1
PRELIMINARY
FETKYTM MOSFET & Schottky Diode
l
l
l
l
l
Co-packaged HEXFET Power
MOSFET and Schottky Diode
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
Micro8TM Footprint
A
A
S
G
1
8
K
2
7
K
3
6
4
5
D
VDSS = -20V
RDS(on) = 0.27Ω
D
Schottky Vf = 0.39V
T op V ie w
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
TM
The new Micro8 package, with half the footprint area of the standard SO-8, provides
TM
the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8
TM
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current ➀
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
Maximum
-1.7
-1.4
-14
1.25
0.8
10
± 12
-5.0
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient ➃
Maximum
Units
100
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
‚ ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%
„ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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01/29/99
IRF7524D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-20
–––
–––
-0.70
1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.17
0.28
–––
–––
–––
–––
–––
–––
5.4
0.96
2.4
9.1
35
38
43
240
130
64
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
0.27
VGS = -4.5V, ID = -1.2A ƒ
Ω
0.40
VGS = -2.7V, ID = -0.60A ƒ
–––
V
VDS = VGS, I D = -250µA
–––
S
VDS = -10V, I D = -0.60A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, T J = 125°C
-100
VGS = -12V
nA
100
VGS = 12V
8.2
ID = -1.2A
1.4
nC VDS = -16V
3.6
VGS = -4.5V, See Fig. 6 ƒ
–––
VDD = -10V
–––
ID = -1.2A
ns
–––
RG = 6.0Ω
–––
RD = 8.3Ω, ƒ
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
52
63
Max. Units
Conditions
-1.25
A
-9.6
-1.2
V
TJ = 25°C, IS = -1.2A, VGS = 0V
78
ns
TJ = 25°C, I F = -1.2A
95
nC di/dt = 100A/µs ƒ
Schottky Diode Maximum Ratings
IF(av)
I SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
1.9
A
1.4
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
TA = 70°C
See Fig.14
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.62
V
0.39
0.57
0.02
mA
8
92
pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V
TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7524D1
Power Mosfet Characteristics
10
10
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
1
0.1
-1.50V
0.01
0.1
1
-1.50V
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
20µs PULSE WIDTH
TJ = 150 °C
0.01
0.1
10
1
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
10
-I D , D rain-to-S ource C urrent (A)
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
TOP
T J = 2 5 °C
T J = 1 5 0 °C
1
0.1
V D S = -1 0 V
2 0 µ s P U L S E W ID T H
0.01
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-VG S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
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A
I D = -1.2 A
1.5
1.0
0.5
V G S = -4.5 V
0.0
-60
-40
-20
0
20
40
60
80
100 120
A
140 160
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7524D1
Power Mosfet Characteristics
V GS
C iss
C rs s
C o ss
C , Capacitance (pF)
400
=
=
=
=
10
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C g d
-V G S , G ate-to-S ource V oltage (V )
500
C iss
300
C oss
200
C rss
100
0
A
1
10
I D = -1 .2 A
V D S = -1 6V
8
6
4
2
FO R TE S T CIR C U IT
S E E FIG U R E 9
0
100
0
-VD S , D rain-to-S ourc e V oltage (V )
4
6
8
A
10
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
T J = 15 0°C
-I D , D rain C urrent (A)
-I S D , Reverse D rain Current (A )
2
1
T J = 2 5°C
0.1
10
100µs
1m s
1
10m s
V G S = 0V
0.01
0.4
0.6
0.8
1.0
-VS D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
1.2
T A = 25 °C
T J = 15 0°C
S ing le P u lse
0.1
1
A
10
100
-V D S , D rain-to-S ourc e V oltage (V )
Fig 8. Maximum Safe Operating Area
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IRF7524D1
Power Mosfet Characteristics
Thermal Response (Z thJC )
1000
100
D = 0.50
0.20
10
0.10
0.05
P DM
0.02
t1
0.01
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
1.0
0.8
0.6
VGS = -2.5V
0.4
VGS = -5.0V
0.2
0.0
0.0
0.5
1.0
1.5
2.0
-I D , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
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R DS
, Drain-to-Source
OnOn
Resistance
RDS
(on)
, Drain-to-Source
Resistance (Ω)
(on)
R DS
, Drain-to-Source
OnOn
Resistance
RDS(on)
(on)
, Drain-to-Source
Resistance (Ω)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.300
0.250
ID = -1.7A
0.200
0.150
0.100
2
3
4
5
6
7
8
-VGS , Gate-to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
IRF7524D1
Schottky Diode Characteristics
100
10
TJ = 150°C
Reverse Current - IR (mA)
125°C
1
100°C
75°C
0.1
50°C
0.01
25°C
0.001
A
0.0001
0
4
8
12
16
20
Reverse Voltage - V R (V)
1
T J = 1 50°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
T J = 1 25°C
T J = 2 5°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Voltage
FForward
orwa rd V
oltage Drop
D ro p -- VVFF(V)
M (V )
Fig. 12 -Typical Forward Voltage Drop
Characteristics
A llo w ab le A m b ie nt T em p era tu re - (°C )
In sta ntane ous Fo rw a rd C urre nt - I F (A)
10
160
V r = 20V
R t h JA = 100°C /W
Square wave
140
120
100
80
D
D
D
D
D
60
40
= 3/4
= 1/2
= 1/3
= 1/4
= 1/5
DC
20
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A v e ra g e F o rw a rd C u rren t - I F(AV ) (A )
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7524D1
Micro8TM Package Details
LE AD A SSIGN M EN TS
INC H ES
D IM
D
M ILLIME TE RS
M IN
M AX
MIN
M AX
A
.0 36
.044
0 .91
1.11
A1
.0 04
.008
0 .10
0.20
B
.0 10
.014
0 .25
0.36
C
.005
.007
0.13
0.18
D
.116
.120
2.95
3.05
e
.0256 B ASIC
0.65 BAS IC
e1
.0128 B ASIC
0.33 BAS IC
E
.1 16
.120
2.95
3.0 5
H
.188
.198
4.78
5.03
e
L
.016
.026
0.4 1
0.66
6X
θ
0°
6°
3
-B-
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
S IN G LE
D UAL
1 2 3 4
1 2 3 4
8 7 6 5
3
H
E
0.2 5 (.010)
-A-
M
A
M
1 2 3 4
S S S G
S 1 G 1 S2 G 2
0°
6°
e1
RE C OM M E ND ED F O O TP RIN T
θ
1.04
( .0 41 )
8X
A
-CB
0.10 (.004)
A1
8X
0.0 8 (.0 03)
M
C A S
L
8X
B S
0.38 8X
( .015 )
C
8X
3.2 0
( .126 )
4.2 4
5.2 8
( .167 ) ( .2 08 )
N O TE S :
1 DIME N S ION IN G A N D T O L E RA N C IN G P E R A N S I Y 1 4 .5M -1 9 8 2 .
2 CO N T R OL L IN G DIME N S ION : INC H .
3 DIME N S ION S D O N O T INC L U D E M O L D F L A S H .
0.65 6X
( .02 56 )
Part Marking
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IRF7524D1
Micro8TM Tape & Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E ED D IR E C TIO N
N OTES:
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
33 0.0 0
( 12 .9 9 2 )
M AX.
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
NO TES :
1 . C O N T R O LL IN G D IM E N S IO N : M IL L IM E T ER .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice . 01/99
8
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