PHILIPS PESD3V3L2UM

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
PESDxL2UM series
Low capacitance double ESD
protection diode
Product specification
2003 Aug 05
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
FEATURES
DESCRIPTION
• Uni-directional ESD protection of two lines or
bi-directional ESD protection of one line
Low capacitance ESD protection diode in a three pad
SOT883 leadless ultra small plastic package designed to
protect up to two transmission or data lines from
ElectroStatic Discharge (ESD) damage.
• Reverse standoff voltage 3.3 and 5 V
• Low diode capacitance
• Ultra low leakage current
PINNING
• Leadless ultra small SOT883 surface mount package
(1 × 0.6 × 0.5 mm)
• Board space 1.17
mm2
PIN
(approx. 10% of SOT23)
DESCRIPTION
1
cathode 1
• ESD protection >15 kV
2
cathode 2
• IEC 61000-4-2; level 4 (ESD); 15 kV (air) or
8 kV (contact).
3
common anode
APPLICATIONS
handbook, halfpage
• Cellular handsets and accessories
• Portable electronics
• Computers and peripherals
Top view
• Communication systems
• Audio and video equipment.
1
2
2
3
3
1
MARKING
Bottom view
TYPE NUMBER
PESD3V3L2UM
F2
PESD5V0L2UM
F1
2003 Aug 05
MLE220
MARKING CODE
Fig.1 Simplified outline (SOT883) and symbol.
2
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
8/20 µs pulse; notes 1, 2 and 3
peak pulse current
Ipp
PESD3V3L2UM
−
3
A
PESD5V0L2UM
−
2.5
A
Ppp
peak pulse power
8/20 µs pulse; notes 1, 2 and 3
−
30
W
IFSM
non-repetitive peak forward current
tp = 1 ms; square pulse
−
3.5
A
IZSM
non-repetitive peak reverse current
tp = 1 ms; square pulse
−
0.9
A
PESD3V3L2UM
−
0.8
A
Ptot
total power dissipation
Tamb = 25 °C; note 4
−
250
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 1 ms; square pulse; see Fig.4
−
6
W
PESD5V0L2UM
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
ESD
electrostatic discharge
IEC 61000-4-2 (contact discharge)
15
−
kV
HBM MIL-Std 883
10
−
kV
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
4. Device mounted on standard printed-circuit board.
ESD standards compliance
IEC 61000-4-2, level 4 (ESD)
>15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3
>4 kV
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
all diodes loaded; note 1
500
K/W
290
K/W
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
2003 Aug 05
3
UNIT
one diode loaded; note 2
Notes
2. FR4 single-sided copper 1 cm2.
VALUE
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
−
1
1.2
V
PESD3V3L2UM
−
−
3.3
V
PESD5V0L2UM
−
−
5
V
VF
forward voltage
VRWM
reverse stand-off voltage
IRM
V(CL)R
reverse leakage current
PESD3V3L2UM
VR = 3.3 V
−
75
300
nA
PESD5V0L2UM
VR = 5 V
−
5
25
nA
clamping voltage
Ipp = 1 A; notes 1 and 2
−
−
8
V
−
−
12
V
Ipp = 1 A; notes 1 and 3
−
−
9
V
Ipp = 3 A; notes 1 and 3
−
−
13
V
Ipp = 1 A; notes 1 and 2
−
−
10
V
Ipp = 2.5 A; notes 1 and 2
−
−
13
V
Ipp = 1 A; notes 1 and 3
−
−
11
V
Ipp = 2.5 A; notes 1 and 3
−
−
15
V
PESD3V3L2UM
5.32
5.6
5.88
V
PESD5V0L2UM
6.46
6.8
7.14
V
−
1.3
−
mV/K
−
2.9
−
mV/K
PESD3V3L2UM
−
−
200
Ω
PESD5V0L2UM
−
−
100
Ω
f = 1 MHz; VR = 0
−
22
28
pF
f = 1 MHz; VR = 5
−
12
17
pF
f = 1 MHz; VR = 0
−
16
19
pF
f = 1 MHz; VR = 5
−
8
11
pF
PESD5V0L2UM
SZ
8/20 µs pulse
Ipp = 3 A; notes 1 and 2
PESD3V3L2UM
VBR
IF = 200 mA
breakdown voltage
temperature coefficient
IZ = 1 mA
IZ = 1 mA
PESD3V3L2UM
PESD5V0L2UM
rdiff
Cd
differential resistance
IR = 1 mA
diode capacitance
PESD3V3L2UM
PESD5V0L2UM
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
2003 Aug 05
4
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
MLE215
10
PESDxL2UM series
MLE216
26
handbook, halfpage
handbook, halfpage
Cd
(pF)
IZSM
22
(A)
18
PESD3V3L2UM
1
PESD3V3L2UM
14
PESD5V0L2UM
PESD5V0L2UM
10
10−1
10−2
10−1
1
tp (ms)
6
10
1
0
2
3
4
5
VR (V)
Tj = 25 °C; f = 1 MHz.
Fig.2
Non-repetitive peak reverse current as a
function of pulse time (square pulse).
Fig.3
MLE217
102
handbook, halfpage
Diode capacitance as a function of reverse
voltage; typical values.
MLE218
120
handbook, halfpage
Ipp
(%)
PZSM
100 % Ipp; 8 µs
(W)
80
e−t
PESD3V3L2UM
10
50 % Ipp; 20 µs
PESD5V0L2UM
40
1
10−2
10−1
1
tp (ms)
0
10
0
10
20
30
t (µs)
40
PZSM = VZSM x IZSM.
VZSM is the non-repetitive peak reverse voltage at IZSM.
Fig.4
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
2003 Aug 05
Fig.5
5
8/20 µs pulse waveform according to
IEC 61000-4-5.
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
handbook, full pagewidth
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
PESDxL2UM series
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
note 1
1
2
D.U.T
PESDxL2UM
Note 1: IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
3
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
GND2
PESD5V0L2UM
PESD3V3L2UM
GND
GND1
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
Fig.6 ESD clamping test set-up and waveforms.
2003 Aug 05
6
MLE219
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
2003 Aug 05
REFERENCES
IEC
JEDEC
JEITA
SC-101
7
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Aug 05
8
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp9
Date of release: 2003
Aug 05
Document order number:
9397 750 11644