PHILIPS HEF4104BD

INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
• The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
• The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4104B
MSI
Quadruple low to high voltage
translator with 3-state outputs
Product specification
File under Integrated Circuits, IC04
January 1995
Philips Semiconductors
Product specification
Quadruple low to high voltage translator
with 3-state outputs
HEF4104B
MSI
The device uses a common negative supply (VSS) and
separate positive supplies for inputs (VDDI) and outputs
(VDD0). VDDI must always be less than or equal to VDDO,
even during power turn-on and turn-off. For the
permissible operating range of VDDI and VDDO see graph
Fig.4.
DESCRIPTION
The HEF4104B quadruple low voltage to high voltage
translator with 3-state outputs provides the capability of
interfacing low voltage circuits to high voltage circuits,
such as low voltage LOCMOS and TTL to high voltage
LOCMOS. It has four data inputs (I0 to I3), an active HIGH
output enable input (EO), four data outputs (O0 to O3) and
their complements (O0 to O3).
Each input protection circuit is terminated between
VDDO and VSS. This allows the input signals to be driven
from any potential between VDDO and VSS, without regard
to current limiting. When driving from potentials greater
than VDDO or less than VSS, the current at each input must
be limited to 10 mA.
With EO HIGH, O0 to O3 and O0 to O3 are in the low
impedance ON-state, either HIGH or LOW as determined
by I0 to I3; with EO LOW, O0 to O3 and O0 to O3 are in the
high impedance OFF-state.
Fig.2 Pinning diagram.
HEF4104BP(N):
16-lead DIL; plastic
(SOT38-1)
HEF4104BD(F):
16-lead DIL; ceramic (cerdip)
(SOT74)
HEF4104BT(D):
16-lead SO; plastic
(SOT109-1)
( ): Package Designator North America
PINNING
I0 to I3
data inputs
EO
output enable input
O0 to O3
data outputs
O0 to O3
complementary data outputs
FAMILY DATA, IDD LIMITS category MSI
See Family Specifications
Fig.1 Functional diagram.
January 1995
2
Philips Semiconductors
Product specification
Quadruple low to high voltage translator
with 3-state outputs
Fig.3 Logic diagram.
January 1995
3
HEF4104B
MSI
Philips Semiconductors
Product specification
Quadruple low to high voltage translator
with 3-state outputs
HEF4104B
MSI
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL
TYP.
TYPICAL EXTRAPOLATION
FORMULA
MAX.
Propagation delays
In → On, On
HIGH to LOW
LOW to HIGH
Output transition times
HIGH to LOW
LOW to HIGH
170
340
ns
143 ns
+
(0,55 ns/pF) CL
80
160
ns
69 ns
+
(0,23 ns/pF) CL
15
65
135
ns
57 ns
+
(0,16 ns/pF) CL
5
170
340
ns
143 ns
+
(0,55 ns/pF) CL
5
10
tPHL
80
160
ns
69 ns
+
(0,23 ns/pF) CL
15
70
140
ns
62 ns
+
(0,16 ns/pF) CL
5
60
120
ns
10 ns
+
(1,0 ns/pF) CL
10
tPLH
30
60
ns
9 ns
+
(0,42 ns/pF) CL
15
20
40
ns
6 ns
+
(0,28 ns/pF) CL
5
60
120
ns
10 ns
+
(1,0 ns/pF) CL
10
tTHL
30
60
ns
9 ns
+
(0,42 ns/pF) CL
15
20
40
ns
6 ns
+
(0,28 ns/pF) CL
5
70
135
ns
10
tTLH
3-state propagation
delays
Output disable times
EO → On, On
HIGH
LOW
10
tPHZ
55
110
ns
15
60
120
ns
5
70
135
ns
55
105
ns
15
55
110
ns
5
195
395
ns
10
tPLZ
Output enable times
EO → On, On
HIGH
LOW
95
195
ns
15
80
165
ns
5
195
395
ns
95
190
ns
80
160
ns
10
tPZH
10
tPZL
15
Dynamic power
VDD
V
TYPICAL FORMULA FOR P (µW)
5
3 000 fi + ∑ (foCL) × VDD2
dissipation per
10
12 200 fi + ∑ (foCL) ×
package (P)
15
31 000 fi + ∑ (foCL) ×
VDD2
VDD2
where
fi = input freq. (MHz)
fo = output freq. (MHz)
CL = load capacitance (pF)
∑ (foCL) = sum of outputs
VDD = supply voltage (V)
January 1995
4
Philips Semiconductors
Product specification
Quadruple low to high voltage translator
with 3-state outputs
HEF4104B
MSI
Fig.4 VDDO as a function of VDDI; the shaded area shows the permissible operating range.
January 1995
5