PHILIPS BFC520

DISCRETE SEMICONDUCTORS
DATA SHEET
BFC520
NPN wideband cascode transistor
Product specification
Supersedes data of 1996 Oct 08
File under Discrete Semiconductors, SC14
1997 Sep 10
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
FEATURES
PINNING - SOT353
• Small size
• High power gain at low bias current and high
frequencies
• High reverse isolation
• Low noise figure
• Gold metallization ensures excellent reliability
• Minimum operating voltage VC2−E1 = 1 V.
APPLICATIONS
SYMBOL
PIN
DESCRIPTION
b2
1
base 2
e1
2
emitter 1
b1
3
base 1
c1/e2
4
collector 1/emitter 2
c2
5
collector 2
c2
handbook, halfpage
5
• Low noise, high gain amplifiers
4
• Oscillator buffer amplifiers
b2
• Wideband voltage-to-current converters.
c1/e2
b1
DESCRIPTION
1
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and cordless phones and has
a very low feedback capacitance resulting in high isolation.
2
3
e1
Top view
MAM212
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
VC2−E1 = 3 V; IC = 20 mA; VB2 = 2.1 V; b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to
ground.
SYMBOL
Cre
s 21 ⁄ s 12
PARAMETER
CONDITIONS
maximum isolation
TYP.
MAX.
UNIT
−
−
10
fF
f = 900 MHz; Tamb = 25 °C
−
−63
−
dB
f = 2 GHz; Tamb = 25 °C
−
−38
−
dB
feedback capacitance CB1−C2
2
MIN.
maximum stable power gain
(narrowband)
f = 900 MHz; Tamb = 25 °C
−
31
−
dB
f = 2 GHz; Tamb = 25 °C
−
19
−
dB
F
noise figure
IC = 5 mA; f = 900 MHz; ΓS = Γopt
−
1.3
1.6
dB
Rth j-s
thermal resistance from
junction to soldering point
single loaded
−
−
230
K/W
double loaded
−
−
115
K/W
MSG
1997 Sep 10
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
8
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
70
mA
Ptot
total power dissipation
−
1
W
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−
175
°C
up to Ts = 60 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point; note 1
CONDITIONS
VALUE
UNIT
single loaded
230
K/W
double loaded
115
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1997 Sep 10
3
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
IC = 2.5 µA; IE = 0
20
−
−
V
8
−
−
V
V(BR)CBO
collector-base breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage IC = 10 µA; IB = 0
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 µA; IC = 0
2.5
−
−
V
ICBO
collector-base leakage current
IE = 0; VCB = 6 V
−
−
50
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
AC characteristics of the cascode configuration
fT
transition frequency
IC = 20 mA; VC2-E1 = 3 V;
f = 1 GHz
−
7
−
GHz
Cc
collector capacitance T2
IE = ie = 0; VC2-B2 = 1 V;
f = 1 MHz
−
0.55
−
pF
Cre2
feedback capacitance T2
IC = 0; VC2-E1 = 3 V; f = 1 MHz
−
500
−
fF
Cre
feedback capacitance
IC = 0; VC2-E1 = 3 V; f = 1 MHz
−
−
10
fF
MSG
maximum stable power gain; note 1 IC = 20 mA; VC2-E1 = 3 V;
f = 900 MHz; Tamb = 25 °C
−
31
−
dB
IC = 20 mA; VC2-E1 = 3 V;
f = 2 GHz; Tamb = 25 °C
−
19
−
dB
IC = 20 mA; VC2-E1 = 3 V;
f = 900 MHz; Tamb = 25 °C
−
17
−
dB
IC = 20 mA; VC2-E1 = 3 V;
f = 2 GHz; Tamb = 25 °C
−
13
−
dB
f = 900 MHz
f = 2 GHz
IC = 5 mA; VC2-E1 = 3 V;
f = 900 MHz; ΓS = Γopt
−
−
63
38
−
−
dB
dB
−
1.3
1.6
dB
−
−18
−
dBm
s 21
insertion power gain
2
s 21 ⁄ s 12
2
maximum isolation; note 2
F
noise figure
IP3
third order intercept point (input)
Notes


2
1. MSG = s 12 ⁄ s 21 ×  k – k – 1 
note 3
2
2
2 
1 + s 11 × s 22 – s 12 × s 21 –  s 11 – s 22 
k = ---------------------------------------------------------------------------------------------------------------2 × s 12 × s 21
2. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application).
3. IC =5 mA; VCE = 3 V; RS = 50 Ω; ZL = opt; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 904 MHz.
1997 Sep 10
4
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
MBG228
1.5
MBG219
12
handbook, halfpage
handbook, halfpage
VC2-E1 = 12 V
fT
(GHz)
Ptot
(mW)
9V
double loaded
1
8
6V
single loaded
0.5
3V
4
0
0
50
100
150
Ts (oC)
0
200
1
10
102
IC (mA)
f = 1 GHz; Tamb = 25 °C.
Fig.2
Power derating as a function of soldering
point temperature; typical values.
Fig.3
MGG219
4
Transition frequency as a function of
collector current; typical values.
MGG220
3
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
f = 900 MHz
3
2
IC = 2 mA
500 MHz
2
10 mA
1
1
0
10−1
0
1
f (GHz)
1
10
VC2-E1 = 3 V.
VC2-E1 = 3 V.
Fig.4
Fig.5
Minimum noise figure as a function of
frequency; typical values.
1997 Sep 10
5
10
IC (mA)
102
Minimum noise figure as a function of
collector current; typical values.
Philips Semiconductors
Product specification
NPN wideband cascode transistor
MGG221
60
handbook, halfpage
MSG
(dB)
BFC520
handbook, halfpage
IC =
5 mA
S21/S12
2 mA
(dB)
MGG222
50
120
100
S21/S12
MSG
(dB)
(dB)
f = 500 MHz
40
80
80
40
900 MHz
1 mA
30
60
40
20
2 GHz
20
0
10−2
10−1
1
f (GHz)
10
10−1
0
10
1
VC2-E1 = 3 V.
VC2-E1 = 3 V.
Fig.6
Fig.7
Maximum stable gain as a function of
frequency; typical values.
MGG223
30
10
40
IC (mA)
20
102
Maximum stable gain and isolation as
functions of collector current; typical values.
MGG224
10
handbook, halfpage
handbook, halfpage
S21
IP3
(dBm)
RL = 220 Ω
(dB)
output
0
20
50 Ω
−10
10
−20
0
10−1
1
10
IC (mA)
input
−30
10−1
102
1
10
IC (mA)
VC2-E1 = 3 V; RS = 50 Ω; XS = XL = opt; f = 900 MHz.
Point tuned for maximum gain with double slug tuners.
VC2-E1 = 3 V; f = 900 MHz.
Fig.8
Fig.9
Insertion gain as a function of collector
current; typical values.
1997 Sep 10
6
102
Third order intercept point as a function of
collector current; typical values.
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
APPLICATION INFORMATION
SPICE parameters for any single BFC520 die
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
PARAMETER
VALUE
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
1.016
220.1
1.000
48.06
510.0
283.0
2.035
100.7
0.988
1.692
2.352
24.48
1.022
10.00
1.000
10.00
775.3
2.210
0.000
1.110
3.000
1.245
600.0
0.258
8.616
6.788
1.414
110.3
45.01
447.6
189.2
0.071
0.130
543.7
0.000
750.0
0.000
0.780
UNIT
fA
−
−
V
mA
fA
−
−
−
V
mA
aA
−
Ω
µA
Ω
mΩ
Ω
−
eV
−
pF
mV
−
ps
−
V
mA
deg
fF
mV
−
−
ps
F
mV
−
−
handbook, halfpage
B2
LP
T2
LB2
LE2
C1/E2
LP
B1
LP
T1
LB1
LP
LE1
E1
MBG216
Fig.10 Package equivalent circuit SOT353A
(inductance only).
Lead and mutual inductances (nH)
LP
0.4
M(LB1,LE1)
+0.4
LB1,2
0.5
M(LB1,LE2)
+0.25
LE1,2
0.8
E1
35
B2
3.5
35
C2
2
35
36
36
35
2
15
B1
E1
B2
C2
C1/E2
MBG217
Note
Fig.11 Package capacitance (fF) between
indicated nodes.
1. These parameters have not been extracted, the
default values are shown.
1997 Sep 10
C2
LP
7
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
Typical application circuits
+VCC
andbook, full pagewidth
R1
RF output
RF input
MBG226
R1 increases stability (10 to 47 Ω).
Fig.12 Narrowband amplifier.
+VCC
handbook, full pagewidth
RF output
E1
T2
T1
Vtune
E1
MBG227
T1 forms a colpitts oscillator.
T2 acts as a buffer amplifier.
Fig.13 VCO/buffer combination.
1997 Sep 10
8
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT353
D
E
B
y
X
A
HE
5
v M A
4
Q
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E (2)
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT353
1997 Sep 10
REFERENCES
IEC
JEDEC
EIAJ
SC-88A
9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 10
10
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
NOTES
1997 Sep 10
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
127127/00/03/pp12
Date of release: 1997 Sep 10
Document order number:
9397 750 02888