IRF PVD1054

Data Sheet No. PD10023E
Series PVD10
Microelectronic Power IC
BOSFET® Photovoltaic Relay
Single-Pole, 160mA, 0-100V DC
General Description
The Photovoltaic DC Relay (PVD) is a single-pole,
normally open solid state replacement for electromechanical relays used for general purpose switching of analog signals. It utilizes as an output switch a
unique bidirectional (AC or DC) MOSFET power IC
termed a BOSFET. The BOSFET is controlled by a
photovoltaic generator of novel construction, which
is energized by radiation from a dielectrically isolated light emitting diode (LED).
The PVD overcomes the limitations of both conventional and reed electromechanical relays by offering
the solid state advantages of long life, high operating speed, low pick-up power, bounce-free operation, low thermal voltages and miniaturization. These
advantages allow product improvement and design
innovations in many applications such as process
control, multiplexing, telecommunications, automatic
test equipment and data acquisition.
The PVD can switch analog signals from thermocouple level to 100 volts peak DC. Signal frequencies into the RF range are easily controlled and
switching rates up to 18kHz are achievable. The
extremely small thermally generated offset voltages
allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate
protection functions. This section of the BOSFET chip
utilizes both bipolar and MOS technology to form
NPN transistors, P-channel MOSFETs, resistors,
diodes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this
technique results in the very fast response of the
PVD microelectronic power IC relay.
This advanced semiconductor technology has created a radically new control device. Designers can
now develop switching systems to new standards of
electrical performance and mechanical compactness.
Features
BOSFET Power IC
1010 Operations
25µsec Operating Time
3 milliwatts Pick-Up Power
1000V/µsec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
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Part Identification
Part Number
Operating
Voltage (DC)
Sensitivity
0 – 100V
5 mA
PVD1052
PVD1054
Off-State
Resistance
108 Ohms
1010 Ohms
(BOSFET is a trademark of International Rectifier)
Series PVD10
Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)
INPUT CHARACTERISTICS
PVD1052
Minimum Control Current (see figures 1 and 2)
For 80mA Continuous Load Current
For 130mA Continuous Load Current
For 50mA Continuous Load Current
Control Current Range (Caution: current limit input LED. See figure 6)
10
µA(DC)
2.0 to 25
mA(DC)
7.0
V(DC)
Maximum Reverse Voltage
PVD1052
Operating Voltage Range
Units
DC
[email protected]°C
[email protected]°C
[email protected]°C
2.0
5.0
5.0
Maximum Control Current for Off-State Resistance at 25°C
OUTPUT CHARACTERISTICS
PVD1054
PVD1054
Units
0 to ± 100
V(RMS)
160
mA(DC)
25
µs
Max. T(off) @ 12mA Control, 50 mA Load, 50 VDC, 100% to 10%
15
µs
Max. On-state Resistance 25°C (Pulsed) (fig. 4) 50 mA Load, 5mA Control
8.0
Maxiumum Load Current 40°C (see figures 1and 2)
Response Time @25°C (see figures 7 and 8)
Max. T(on) @ 12mA Control, 50 mA Load, 50 VDC, 0 to 90%
8
Min. Off-state Resistance 25°C @ 80 VDC (see figure 5)
10
Max. Thermal Offset Voltage @ 5.0mA Control
Ω
10
10
0.2
Ω
µvolts
Min. Off-State dv/dt
1000
V/µs
Output Capacitance
8.0
pF @ 50VDC
2500
V RMS
GENERAL CHARACTERISTICS (PVD1052 and PVD1054)
Dielectric Strength: Input-Output
Insulation Resistance: Input-Output @ 90V DC
Maximum Capacitance: Input-Output
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.)
Ambient Temperature Range:
Units
1012 @ 25°C - 50% RH
Ω
1.0
pF
+260
Operating
-40 to +85
Storage
-40 to +100
2
°C
Max. Load Current mA
Max. Load Current mA
Series PVD10
ILED (mA)
Ambient Temperature (°C)
Figure 2. Typical Control Current Requirements
Input Current (mA)
Load Current (mA)
Figure 1. Current Derating Curves
VDS (Volts)
LED Forward Voltage Drop (Volts DC)
Figure 3.Typical On Characteristics
3
Figure 4. Typical On-Resistance
IDOff/IDOff 25°C
Input Current (mA)
Series PVD10
LED Forward Voltage Drop (Volts DC)
Ambient Temperature (°C)
Figure 6. Input Characteristics
(Current Controlled)
ILED (mA)
Figure 5. Normalized Off-State Leakage
Delay Time (microseconds)
Figure 7.Typical Delay Times
Figure 8. Delay Time Definitions
4
Typical Capacitance (picofarads)
Series PVD10
VDD Drain to Drain Voltage
Figure 9. Typical Output Capacitance
Wiring Diagram
5
Series PVD10
Case
Outline
(Dimensions in millimeters (inches))
Mechanical
Specifications:
Package: 8-pin DIP
Tolerances: .015 (.38) unless otherwise specified
Case Material: molded epoxy
Weight: .07 oz. (2 gr.)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086
IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon,
Hong Kong Tel: (852) 2803-7380
http://www.irf.com/
Data and specifications subject to change without notice. 6/14/99
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