PD - 95251A
IRF7353D1PbF
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Co-packaged HEXFET® Power MOSFET
and Schottky Diode
Ideal For Buck Regulator Applications
N-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
Lead-Free
FETKYä MOSFET / Schottky Diode
A
A
S
G
1
8
K
2
7
K
3
6
4
5
VDSS = 30V
RDS(on) = 0.029Ω
D
D
Schottky Vf = 0.39V
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
SO-8
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Maximum
Units
6.5
5.2
52
2.0
1.3
16
± 20
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum
Units
62.5
°C/W
Junction-to-Ambient
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A
ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7353D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.023
0.032
—
14
—
—
—
—
22
2.6
6.4
8.1
8.9
26
17
650
320
130
Max. Units
Conditions
—
V
VGS = 0V, ID = 250µA
0.032
VGS = 10V, ID = 5.8A
Ω
0.046
VGS = 4.5V, ID = 4.7A
—
V
VDS = V GS, ID = 250µA
—
S
VDS = 24V, ID = 5.8A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, VGS = 0V, TJ = 55°C
100
VGS = 20V
nA
-100
VGS = -20V
33
ID = 5.8A
3.9
nC
VDS = 24V
9.6
VGS = 10V (see figure 8)
12
VDD = 15V
13
ID = 1.0A
ns
39
RG = 6.0Ω
26
RD = 15Ω
—
VGS = 0V
—
pF
VDS = 25V
—
ƒ = 1.0MHz (see figure 7)
MOSFET Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Body Diode Forward Voltage
trr
Reverse Recovery Time (Body Diode)
Qrr
Reverse Recovery Charge
Min.
—
—
—
—
—
Typ. Max. Units
—
2.5
A
—
30
0.78 1.0
V
45
68
ns
58
87
nC
Conditions
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
di/dt = 100A/µs Â
Schottky Diode Maximum Ratings
IF(av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
2.7
A
1.9
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig. 14
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
2
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
92
pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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IRF7353D1PbF
Power Mosfet Characteristics
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
0.1
10
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
10
VDS = 10V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
1
VDS, Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
A
5.0
ID = 5.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7353D1PbF
Power Mosfet Characteristics
V GS = 4.5V
0.036
0.032
0.028
0.024
V GS = 10V
0.020
0
10
20
30
40
A
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.040
0.12
0.10
0.08
0.06
I D = 5.8A
0.04
0.02
0.00
0
I D , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
20
Ciss
Coss
600
Crss
300
0
A
1
10
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance Vs.
Drain-to-Source Voltage
4
9
12
15
Fig 6. Typical On-Resistance Vs. Gate
Voltage
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
900
6
V GS , Gate-to-Source Voltage (V)
Fig 5. Typical On-Resistance Vs. Drain
Current
1200
3
100
ID = 5.8A
VDS = 15V
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 8. Typical Gate Charge Vs.
Gate-to-Source Voltage
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A
IRF7353D1PbF
Power Mosfet Characteristics
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
ISD , Reverse Drain Current (A)
100
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
A
1.6
VSD , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode
Forward Voltage
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IRF7353D1PbF
Schottky Diode Characteristics
100
Reverse Current - IR (mA)
10
J 1
0.1
0.01
0.001
0.0001
1
)
0
5
TJ = 125°C
0.1
0.2
0.4
0.6
0.8
15
20
25
30
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ = 25°C
0.0
10
R TJ = 150°C
1.0
Forward Voltage Drop - VFM (V)
Forward Voltage Drop - VF (V)
Fig. 12 -Typical Forward Voltage Drop Characteristics
Allowable Ambient Temperature - (°C)
Instantaneous Forward Current - IF (A)
10
160
V r = 80% Rated
R thJA = 62.5°C/W
Square wave
140
120
100
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
80
60
DC
40
20
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forward Current - I F(AV) (A)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7353D1PbF
SO-8 (Fetky) Package Outline
D
(Dimensions are shown in millimeters (inches)
DIM
B
5
A
8
7
6
5
H
E
0.25 [.010]
1
6X
2
3
A
4
e
e1
MIN
.0532
.0688
1.35
1.75
C
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
e1
1.27 BAS IC
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMET ERS
MAX
A
6
INCHES
MIN
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS TO JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: T HIS IS AN IRF7807D1 (FETKY)
INTERNATIONAL
RECTIFIER
LOGO
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XXXX
807D1
DAT E CODE (YWW)
P = DIS GNAT ES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
7
IRF7353D1PbF
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
8
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