DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product specification 2003 Feb 20 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat PBSS4240DPN QUICK REFERENCE DATA MAX. • High collector current capability IC and ICM SYMBOL PARAMETER UNIT NPN PNP • High collector current gain hFE at high IC • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements. APPLICATIONS • Power management: – Complementary MOSFET driver 40 −40 collector current (DC) 1.35 −1.1 A repetitive peak collector current 2 −2 A ICM peak collector current 3 −3 A RCEsat equivalent on-resistance 200 260 mΩ VCEO emitter-collector voltage IC ICRP – Dual supply line switching. • Peripheral driver: PINNING – Half and full bridge motor drivers – Multi-phase stepper motor driver. PIN DESCRIPTION 1, 4 emitter TR1; TR2 DESCRIPTION 2, 5 base TR1; TR2 NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. 6, 3 collector TR1; TR2 MARKING TYPE NUMBER PBSS4240DPN 6 handbook, halfpage 5 6 4 5 4 MARKING CODE TR2 M3 TR1 1 Top view Fig.1 2003 Feb 20 2 2 3 1 2 3 MAM445 Simplified outline SOT457 (SC-74) and symbol. V Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 40 VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) V − NPN − 1.35 A PNP − −1.1 A ICRP repetitive peak collector current note 1 − 2 A ICM peak collector current single peak − 3 A IB base current (DC) − 300 mA IBM peak base current − 1 A Ptot total power dissipation Tamb ≤ 25 °C; note 2 − 370 mW Tamb ≤ 25 °C; note 3 − 310 mW Tamb ≤ 25 °C; note 1 − 1.1 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 600 mW Per device Ptot total power dissipation Tamb ≤ 25 °C; note 2 Notes 1. Operated under pulsed conditions: duty cycle δ ≤ 20%; pulse width tp ≤ 10 ms; mounting pad for collector standard footprint. 2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT in free air; note 1 340 K/W in free air; note 2 110 K/W Per transistor Rth j-a thermal resistance from junction to ambient Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.20; mounting pad for collector standard footprint. 2003 Feb 20 3 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity VCB = 40 V; IE = 0 − − ICBO collector-base cut-off current 100 nA VCB = 40 V; IE = 0; Tj = 150 °C − − 50 µA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 − − 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 300 − − fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 12 pF DC current gain VCE = 5 V; IC = 500 mA 300 − 900 VCE = 5 V; IC = 1 A 200 − − TR1 (NPN) hFE VCEsat collector-emitter saturation voltage VCE = 5 V; IC = 2 A; note 1 75 − − IC = 100 mA; IB = 1 mA − 60 75 mV IC = 500 mA; IB = 50 mA − 80 100 mV IC = 1 A; IB = 100 mA − 150 200 mV IC = 2 A; IB = 200 mA; note 1 − 300 400 mV VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.2 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A − − 1.1 V RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA − − 200 mΩ DC current gain VCE = −5 V; IC = −100 mA 300 − 800 VCE = −5 V; IC = −500 mA 250 − − VCE = −5 V; IC = −1 A 160 − − TR2 (PNP) hFE VCEsat saturation voltage VCE = −5 V; IC = −2 A; note 1 50 − − IC = −100 mA; IB = −1 mA − −90 −120 mV IC = −500 mA; IB = −50 mA − −100 −145 mV IC = −1 A; IB = −100 mA − −180 −260 mV IC = −2 A; IB = −200 mA; note 1 − −400 −530 mV VBEsat saturation voltage IC = −1 A; IB = −50 mA − − −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − − −1 V RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA; note 1 − − 260 mΩ Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Feb 20 4 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC471 800 MHC472 1.2 handbook, halfpage handbook, halfpage hFE VBE (1) (V) 600 (1) 0.8 (2) (2) 400 (3) 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN); VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC473 103 handbook, halfpage 10 102 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MHC474 1.2 handbook, halfpage VBEsat VCEsat (V) (mV) 1 (1) 0.8 (2) 102 (1) 0.6 (2) (3) 0.4 (3) 10 10−1 1 10 102 0.2 10−1 103 104 IC (mA) 1 TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN); IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Feb 20 5 10 102 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC475 2 IC (A) MHC476 103 handbook, halfpage (1) (2) (3) handbook, halfpage RCEsat (Ω) (4) (5) (6) 1.6 102 (7) 1.2 (8) (9) 10 (10) 0.8 1 0.4 (1) 10−1 10−1 0 0.4 0 0.8 1.2 1.6 2 VCE (V) TR1 (NPN); Tamb = 25 °C. (1) (2) (3) (4) IB = 30 mA. IB = 27 mA. IB = 24 mA. IB = 21 mA. (5) (6) (7) (8) IB = 18 mA. IB = 15 mA. IB = 12 mA. IB = 9 mA. Collector current as a function of collector-emitter voltage; typical values. 2003 Feb 20 1 10 102 103 104 IC (mA) TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (9) IB = 6 mA. (10) IB = 3 mA. Fig.7 Fig.6 (2) (3) 6 Collector-emitter equivalent on-resistance as a function of collector current; typical values. Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC464 1000 MHC465 −1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) (1) −0.8 (2) 600 (3) (2) 400 −0.4 (3) 200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 TR2 (PNP); VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.9 DC current gain as a function of collector current; typical values. MHC466 −103 handbook, halfpage −10 −102 −103 −104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MHC467 −1.2 handbook, halfpage VBEsat (V) VCEsat −1 (mV) −102 (1) −0.8 (1) (2) (2) −0.6 (3) −10 (3) −0.4 −1 −10−1 −1 −10 −102 −0.2 −10−1 −103 −104 IC (mA) −1 −10 −102 −103 −104 IC (mA) TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Feb 20 7 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC468 −1.2 MHC469 −2.4 IC (A) −2 handbook, halfpage handbook, halfpage IC (A) (4) (3) −0.8 (2) (1) (1) (2) (3) (4) (5) −1.6 (5) (6) (7) (8) (6) (7) −1.2 (9) (8) −0.4 −0.8 (9) (10) 0 0 −0.4 −0.8 −1.2 −0.4 0 −2 −1.4 VCE (V) 0 TR2 (PNP); Tamb = 25 °C. (1) (2) (3) (4) IB = −7 mA. IB = −6.3 mA. IB = −5.6 mA. IB = −4.9 mA. (5) (6) (7) (8) −0.4 −0.8 −1.2 −1.6 −2 VCE (V) TR2 (PNP); Tamb = 25 °C. IB = −4.2 mA. IB = −3.5 mA. IB = −2.8 mA. IB = −2.1 mA. (9) IB = −1.4 mA. (10) IB = −0.7 mA. (1) (2) (3) (4) Fig.12 Collector current as a function of collector-emitter voltage; typical values. 2003 Feb 20 (10) IB = −50 mA. IB = −45 mA. IB = −40 mA. IB = −35 mA. (5) (6) (7) (8) IB = −30 mA. IB = −25 mA. IB = −20 mA. IB = −15 mA. (9) IB = −10 mA. (10) IB = −5 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 8 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC470 103 handbook, halfpage RCEsat (Ω) 102 10 (1) (2) 1 (3) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Feb 20 9 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2003 Feb 20 REFERENCES IEC JEDEC EIAJ SC-74 10 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor PBSS4240DPN DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Feb 20 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp12 Date of release: 2003 Feb 20 Document order number: 9397 750 10783