SA58670 2.1 W/channel stereo Class D audio amplifier Rev. 01 — 22 June 2007 Objective data sheet 1. General description The SA58670 is a stereo, filter-free Class D audio amplifier which is available in an HVQFN20 package with the exposed Die Attach Paddle (DAP). The SA58670 features independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB utilizing G0 and G1 gain select pins. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start-up time and small package, makes it an ideal choice for both cellular handsets and PDAs. The SA58670 delivers 1.4 W/channel at 5 V and 720 mW/channel at 3.6 V into 8 Ω. It delivers 2.1 W/channel at 5 V into 4 Ω. The maximum power efficiency is excellent at 70 % to 74 % into 4 Ω and 84 % to 88 % into 8 Ω. The SA58670 provides thermal and short circuit shutdown protection. 2. Features Output power 2.1 W/channel into 4 Ω at 5 V 1.4 W/channel into 8 Ω at 5 V 720 mW/channel into 8 Ω at 3.6 V Power supply range: 2.5 V to 5.5 V Independent shutdown control for each channel Selectable gain of 6 dB, 12 dB, 18 dB and 24 dB High PSSR: 77 dB at 217 Hz Fast start-up time of 3.5 ms Low supply current Low shutdown current Short-circuit and thermal protection Space savings with 4 mm × 4 mm HVQFN20 package Low junction to ambient thermal resistance of 24 K/W with exposed die attach paddle 3. Applications Wireless and cellular handsets and PDAs Portable DVD player USB speakers Notebook PC Portable radio and gaming SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier Educational toys 4. Ordering information Table 1. Ordering information Type number SA58670BS Package Name Description Version HVQFN20 plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 × 4 × 0.85 mm SOT917-1 5. Block diagram VDD SA58670 right input INRP INRN OUTRP GAIN ADJUST H− BRIDGE PWM INTERNAL OSCILLATOR left input INLP INLN to battery OUTRN GND OUTLP GAIN ADJUST PWM H− BRIDGE OUTLN G0 G1 SDR 300 kΩ BIAS CIRCUITRY SHORT-CIRCUIT PROTECTION SDL 300 kΩ 002aac765 Refer to Table 6 for gain selection. Fig 1. Block diagram SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 2 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 6. Pinning information 16 INRP 17 INRN terminal 1 index area 18 AGND 20 INLP 19 INLN 6.1 Pinning G1 1 15 G0 OUTLP 2 PVDD 3 PGND 4 12 PGND OUTLN 5 11 OUTRN 14 OUTRP 8 9 AVDD 13 PVDD n.c. 10 7 SDL n.c. 6 (1) SDR SA58670BS 002aac766 Transparent top view (1) Exposed DAP. Fig 2. Pin configuration for HVQFN20 6.2 Pin description Table 2. Pin description Symbol Pin Description G1 1 gain select (MSB) OUTLP 2 left channel positive output PVDD 3, 13 power supply (level same as AVDD) PGND 4, 12 power ground OUTLN 5 left channel negative output n.c. 6, 10 not connected SDL 7 left channel shutdown (active LOW) SDR 8 right channel shutdown (active LOW) AVDD 9 analog supply (level same as PVDD) OUTRN 11 right channel negative output OUTRP 14 right channel positive output G0 15 gain select (LSB) INRP 16 right channel positive input INRN 17 right channel negative input AGND 18 analog ground INLN 19 left channel negative input INLP 20 left channel positive input - (DAP) exposed die attach paddle; connect to ground plane heat spreader SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 3 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 7. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDD supply voltage Conditions Min Max Unit active mode −0.3 +6.0 V shutdown mode −0.3 +7.0 V −0.3 VDD + 0.3 V <tbd> <tbd> W Tamb = 25 °C - 5.2 W Tamb = 75 °C - 3.12 W Tamb = 85 °C VI input voltage Ptot total power dissipation continuous P power dissipation derating factor 41.6 mW/°C - 2.7 W Tamb ambient temperature operating in free air −40 +85 °C Tj junction temperature operating −40 +150 °C Tstg storage temperature −65 +85 °C ESD Human body model 2 kV ESD Machine model 200 V VSD(max) Shutdown pin voltage maximum voltage GND SA58670_1 Objective data sheet VDD V © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 4 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 8. Static characteristics Table 4. Static characteristics Tamb = 25 °C, unless otherwise specified. Symbol Parameter Conditions |VO(offset)| output offset voltage PSRR power supply rejection ratio Min Typ Max Unit measured differentially; inputs AC grounded; Gv = 6 dB; VDD = 2.5 V to 5.5 V 5 10 mV VDD = 2.5 V to 5.5 V - −75 −55 dB Vi(cm) common-mode input voltage 0.5 - VDD − 0.8 V CMRR common mode rejection ratio inputs are shorted together; VDD = 2.5 V to 5.5 V - −69 −50 dB IIH HIGH-level input current VDD = 5.5 V; VI = VDD - - 50 µA IIL LOW-level input current VDD = 5.5 V; VI = 0 V - - 5 µA IDD supply current VDD = 5.5 V; no load - 6 9 mA VDD = 3.6 V; no load - 5 7.5 mA VDD = 2.5 V; no load - 4 6 mA 1000 nA ISD shutdown current no input signal, VSD = GND 10 VSD shutdown voltage input device ON VDD/2 RDSon drain-source on-state resistance device OFF GND static; VDD = 5.5 V - static; VDD = 3.6 V static; VDD = 2.5 V V 0.4 V 500 - mΩ - 570 - mΩ - 700 - mΩ Zo(sd) shutdown mode output impedance VSDR, VSDL = 0.35 V - 2 - kΩ fsw switching frequency VDD = 2.5 V to 5.5 V 250 300 350 kHz Gv(cl) closed-loop voltage gain G0, G1 = 0.35 V 5.5 6 6.5 dB G0 = VDD; G1 = 0.35 V 11.5 12 12.5 dB G0 = 0.35 V; G1 = VDD 17.5 18 18.5 dB G0 = VDD; G1 = VDD 23.5 24 24.5 dB SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 5 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 9. Dynamic characteristics Table 5. Dynamic characteristics Tamb = 25 °C; RL = 8 Ω; unless otherwise specified. Symbol Parameter Conditions Po output power per channel; f = 1 kHz; THD+N = 10 % THD+N SVRR total harmonic distortion-plus-noise supply voltage ripple rejection CMRR common mode rejection ratio Zi input impedance Min Typ Max Unit RL = 8 Ω; VDD = 5.0 V - 1.4 - W RL = 8 Ω; VDD = 3.6 V - 0.72 - W RL = 4 Ω; VDD = 5.0 V - 2.1 - W Po = 1 W - 0.14 - % Po = 0.5 W - 0.11 - % VDD = 5 V - −77 - dB VDD = 3.6 V - −73 - dB - −69 - dB VDD = 5 V; Gv = 6 dB; f = 1 kHz Gv = 6 dB; f = 217 Hz VDD = 5 V; Gv = 6 dB; f = 217 Hz Gv = 6 dB - 28.1 - kΩ Gv = 12 dB - 17.3 - kΩ Gv = 18 dB - 9.8 - kΩ Gv = 24 dB - 5.2 - kΩ - 3.5 - ms td(sd-startup) delay time from shutdown to start-up VDD = 3.6 V Vn(o) noise output voltage VDD = 3.6 V; f = 20 Hz to 20 kHz; inputs are AC grounded no weighting - 35 - µV A weighting - 27 - µV SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 6 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 10. Typical performance curves 002aac767 100 002aac768 100 THD+N (%) THD+N (%) (1) (2) (1) 10 10 1 1 0.1 0.01 0.1 1 0.1 0.01 10 0.1 (2) 1 Po (W) 10 Po (W) (1) VDD = 3.6 V; RL = 4 Ω; f = 1 kHz; Gv = 24 dB (1) VDD = 3.6 V; RL = 8 Ω; f = 1 kHz; Gv = 24 dB (2) VDD = 5 V; RL = 4 Ω; f = 1 kHz; Gv = 24 dB (2) VDD = 5 V; RL = 8 Ω; f = 1 kHz; Gv = 24 dB a. 4 Ω load b. 8 Ω load Fig 3. THD+N versus output power 002aac769 −60 crosstalk (dB) SA58670, ch 1 SA58670, ch 2 −80 −100 ch 1 ch 2 −120 2k 3k 4k 5k 6k 7k 8 k 9 k 10 k 20 k crosstalk (Hz) Fig 4. Stepped all-to-one crosstalk SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 7 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 002aac770 −30 distortion product ratio (dB) −50 SA58670, ch 1 −70 SA58670, ch2 −90 −110 20 30 50 100 200 300 500 1k 2k 3k 5k 20 k 10 k f (Hz) Fig 5. Stepped distortion product ratio 002aac771 1m Vn(o)(RMS) (V) 100 µ (1) (2) 10 µ 1µ 20 30 50 100 200 300 500 1k 2k 3k 5k 10 k 20 k f (Hz) (1) Left channel. (2) Right channel. Fig 6. Noise output voltage SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 8 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 11. Application information 11.1 Power supply decoupling considerations The SA58670 is a stereo Class D audio amplifier that requires proper power supply decoupling to ensure the rated performance for THD+N and power efficiency. To decouple high frequency transients, power supply spikes and digital noise on the power bus line, a low Equivalent Series Resistance (ESR) capacitor, of typically 1 µF is placed as close as possible to the PVDD terminals of the device. It is important to place the decoupling capacitor at the power pins of the device because any resistance or inductance in the PCB trace between the device and the capacitor can cause a loss in efficiency. Additional decoupling using a larger capacitor, 4.7 µF or greater may be done on the power supply connection on the PCB to filter low frequency signals. Usually this is not required due to high PSRR of the device. 11.2 Input capacitor selection The SA58670 does not require input coupling capacitors when used with a differential audio source that is biased from 0.5 V to VDD − 0.8 V. In other words, the input signal must be biased within the common-mode input voltage range. If high pass filtering is required or if it is driven using a single-ended source, input coupling capacitors are required. The high pass corner frequency created by the input coupling capacitor and the input resistors (see Table 6) is calculated by Equation 1: 1 f C = ----------------------------2π × R i × C i (1) Table 6. Gain selection G1 G0 Gain (V/V) Gain (dB) 0 0 2 6 28.1 0 1 4 12 17.3 1 0 8 18 9.8 1 1 16 24 5.2 Input impedance (kΩ) Since the value of the input decoupling capacitor and the input resistance determined by the gain setting affects the low frequency performance of the audio amplifier, it is important to consider in the system design. Small speakers in wireless and cellular phones usually do not respond well to low frequency signals, so the high pass corner frequency may be increased to block the low frequency signals to the speakers. Not using input coupling capacitors may increase the output offset voltage. Equation 1 is solved for Ci: 1 C i = ---------------------------2π × R i × f C (2) SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 9 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 11.3 PCB layout considerations Component location is very important for performance of the SA58670. Place all external components very close to the device. Placing decoupling capacitors directly at the power supply pins increases efficiency because the resistance and inductance in the trace between the device power supply pins and the decoupling capacitor causes a loss in power efficiency. The trace width and routing are also very important for power output and noise considerations. For high current terminals (PVDD, PGND and audio output), the trace widths should be maximized to ensure proper performance and output power. Use at least 500 µm wide traces. For the input pins (INRP/INRN and INLP/INLN), the traces must be symmetrical and run side-by-side to maximize common-mode cancellation. 11.4 Filter-free operation and ferrite bead filters A ferrite bead low-pass filter can be used to reduce radio frequency emissions in applications that have circuits sensitive to greater than 1 MHz. A ferrite bead low-pass filter functions well for amplifiers that must pass FCC unintentional radiation requirements at greater than 30 MHz. Choose a bead with high-impedance at high frequencies and very low-impedance at low frequencies. In order to prevent distortion of the output signal, select a ferrite bead with adequate current rating. For applications in which there are circuits that are EMI sensitive to low frequency (<1 MHz) and there are long leads from amplifier to speaker, it is necessary to use an LC output filter. 11.5 Efficiency and thermal considerations The maximum ambient operating temperature depends on the heat transferring ability of the heat spreader on the PCB layout. In Table 3 “Limiting values”, power dissipation, the power derating factor is given as 41.6 mW/°C. The device thermal resistance, Rth(j-a) is the reciprocal of the power derating factor. Convert the power derating factor to Rth(j-a) by the following equation: 1 1 R th ( j-a ) = ----------------------------------------- = ---------------- = 24 °C/W derating factor 0.0413 (3) For a maximum allowable junction temperature, Tj = 150 °C and Rth(j-a) = 24 °C/W and a maximum device dissipation of 1.5 W (750 mW per channel) and for 2.1 W per channel output power, 4 Ω load, 5 V supply, the maximum ambient temperature is calculated using Equation 4: T amb ( max ) = T j ( max ) – ( R th ( j-a ) × P D ( max ) ) = 150 – ( 24 × 1.5 ) = 114 °C (4) The maximum ambient temperature is 114 °C at maximum power dissipation for 5 V supply and 4 Ω load. If the junction temperature of the SA58670 rises above 150 °C, the thermal protection circuitry turns the device off; this prevents damage to IC. Using speakers greater than 4 Ω further enhances thermal performance and battery lifetime by reducing the output load current and increasing amplifier efficiency. SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 10 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 11.6 Additional thermal information The SA58670 HVQFN20 package incorporates an exposed die attach paddle (DAP) that is designed to solder mount directly to the PCB heat spreader. By the use of thermal vias, the DAP may be soldered directly to a ground plane or special heat sinking layer designed into the PCB. The thickness and area of the heat spreader may be maximized to optimize heat transfer and achieve lowest package thermal resistance. SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 11 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 12. Package outline HVQFN20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 x 4 x 0.85 mm B D SOT917-1 A terminal 1 index area A E A1 c detail X C e1 e b 6 10 y y1 C v M C A B w M C L 11 5 e Eh e2 1 15 terminal 1 index area 20 16 Dh X 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 e2 L v w y y1 mm 1 0.05 0.00 0.30 0.18 0.2 4.1 3.9 2.45 2.15 4.1 3.9 2.45 2.15 0.5 2 2 0.6 0.4 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT917 -1 --- MO-220 --- EUROPEAN PROJECTION ISSUE DATE 05-10-08 05-10-31 Fig 7. Package outline SOT917-1 (HVQFN20) SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 12 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 13. Soldering This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 13.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 13.2 Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: • Through-hole components • Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: • • • • • • Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus PbSn soldering 13.3 Wave soldering Key characteristics in wave soldering are: • Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave • Solder bath specifications, including temperature and impurities SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 13 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 13.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 8) than a PbSn process, thus reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 7 and 8 Table 7. SnPb eutectic process (from J-STD-020C) Package thickness (mm) Package reflow temperature (°C) Volume (mm3) < 350 ≥ 350 < 2.5 235 220 ≥ 2.5 220 220 Table 8. Lead-free process (from J-STD-020C) Package thickness (mm) Package reflow temperature (°C) Volume (mm3) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 8. SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 14 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier maximum peak temperature = MSL limit, damage level temperature minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 8. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 14. Abbreviations Table 9. Abbreviations Acronym Description DAP Die Attach Paddle DVD Digital Video Disc EMI ElectroMagnetic Interference ESR Equivalent Series Resistance FCC Federal Communications Commission LC inductor-capacitor filter LSB Least Significant Bit MSB Most Significant Bit PC Personal Computer PCB Printed-Circuit Board PDA Personal Digital Assistant PWM Pulse Width Modulator USB Universal Serial Bus SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 15 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 15. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes SA58670_1 20070622 Objective data sheet - - SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 16 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] SA58670_1 Objective data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 17 of 18 SA58670 NXP Semiconductors 2.1 W/channel stereo Class D audio amplifier 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 11.1 11.2 11.3 11.4 11.5 11.6 12 13 13.1 13.2 13.3 13.4 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Typical performance curves . . . . . . . . . . . . . . . 7 Application information. . . . . . . . . . . . . . . . . . . 9 Power supply decoupling considerations . . . . . 9 Input capacitor selection . . . . . . . . . . . . . . . . . . 9 PCB layout considerations . . . . . . . . . . . . . . . 10 Filter-free operation and ferrite bead filters. . . 10 Efficiency and thermal considerations . . . . . . 10 Additional thermal information . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Introduction to soldering . . . . . . . . . . . . . . . . . 13 Wave and reflow soldering . . . . . . . . . . . . . . . 13 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 13 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 June 2007 Document identifier: SA58670_1