Preliminary Data Sheet PD - 9.1251
IRFP2410
HEXFET ® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
Fast Switching
Ease of Paralleling
VDSS = 100V
RDS(on) = 0.025 Ω
ID = 61A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
It also provides greater creepage distance between pins to meet the requirements
of most safety specifications.
Absolute Maximum Ratings
Parameter
ID @ T C = 25°C
ID @ T C = 100°C
IDM
PD @T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
61
43
240
230
1.5
±20
830
37
23
5.5
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.24
––––
0.65
––––
40
°C/W
Revision 0
IRFP2410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(ON)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
100
–––
–––
2.0
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
16
100
120
97
Max. Units
Conditions
–––
V
VGS = 0V, I D = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.025
Ω
VGS = 10V, I D = 37A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 37A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, T J = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
180
ID = 37A
30
nC
VDS = 80V
69
VGS = 10V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 37A
ns
–––
RG = 6.2Ω
–––
RD = 1.3Ω, See Fig. 10
Between lead,
––– 5.0 –––
6mm (0.25in.)
nH
from package
––– 13
–––
and center of die contact
––– 4600 –––
VGS = 0V
––– 1100 --––
pF
VDS = 25V
––– 200 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
61
–––
–––
240
–––
–––
–––
––– 2.5
180 270
990 1500
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, I S = 37A, V GS = 0V
TJ = 25°C, I F = 37A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 37A, di/dt ≤ 200A/µs, V DD ≤ V(BR)DSS,
T J ≤ 175°C
VDD = 25V, starting T J = 25°C, L = 270µH
R G = 25Ω, IAS = 37A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
S+LD)
IRFP2410
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
20µs PULSE WIDTH
TC = 25°C
1
0.01
0.1
1
10
A
100
4.5V
10
100
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
10
VDS = 50V
20µs PULSE WIDTH
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1
10
A
100
Fig 2. Typical Output Characteristics,
TC = 175oC
1000
1
0.1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TC = 25oC
100
20µs PULSE WIDTH
TC = 175°C
1
0.01
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
10
A
I D = 61A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP2410
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
8000
6000
Ciss
4000
Coss
2000
I D = 37A
V DS = 80V
V DS = 50V
V DS = 20V
16
12
8
4
Crss
0
A
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
80
120
160
A
200
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
40
TJ = 25°C
TJ = 175°C
100
100
100µs
1ms
10
10ms
VGS = 0V
10
0.0
1.0
2.0
3.0
4.0
5.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
6.0
T C = 25°C
T J = 175°C
Single Pulse
1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1000
IRFP2410
RD
VDS
VGS
70
D.U.T.
RG
VDD
ID, Drain Current (Amps)
60
10 V
50
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
30
20
10
A
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
PD M
SINGLE PULSE
(THERMAL RESPONSE)
t
t
N otes :
1 . D uty fac tor D = t
0.001
0.00001
1
1
/t
2
2
2. P ea k T J = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
10 V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRFP2410
2000
TOP
BOTTOM
1600
ID
15A
26A
37A
1200
800
400
0
VDD = 25V
25
50
A
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
175
IRFP2410
Peak Diode Recovery dv/dt Test Circuit
D.U.T
RG
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• dv/dt controlled by R G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFP2410
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
3.65 (.143)
3.55 (.140)
15.90 (.626)
15.30 (.602)
-B-
0.25 (.010) M D B M
-A5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
2
-D5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
NOTES:
5.50 (.217)
4.50 (.177)
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
3
-C-
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
4.30 (.170)
3.70 (.145)
0.80 (.031)
3X 0.40 (.016)
1.40 (.056)
3X 1.00 (.039)
0.25 (.010) M
3.40 (.133)
3.00 (.118)
C A S
2.60 (.102)
2.20 (.087)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
Part Marking Information
TO-247AC
EXAMPLE : THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 3A1Q
A
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
3A1Q 9302
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW WEEK
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Data and specifications subject to change without notice.